Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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| Data(s) |
24/10/2013
24/10/2013
2012
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| Resumo |
One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar. Interuniversity Microelectronics Center's Core Partner Program on Emerging Memory Devices: Intel, Micron, Panasonic, Samsung, TSMC, ELPIDA, Hynix, Sony, and FUJITSU Interuniversity Microelectronics Centers Core Partner Program on Emerging Memory Devices: Intel, Micron, Panasonic, Samsung, TSMC, ELPIDA, Hynix, Sony, and FUJITSU |
| Identificador |
IEEE TRANSACTIONS ON ELECTRON DEVICES, PISCATAWAY, v. 59, n. 8, supl. 4, Part 1, pp. 2167-2172, AUG, 2012 0018-9383 http://www.producao.usp.br/handle/BDPI/35963 10.1109/TED.2012.2200685 |
| Idioma(s) |
eng |
| Publicador |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC PISCATAWAY |
| Relação |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Direitos |
restrictedAccess Copyright IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Palavras-Chave | #ELECTRIC FIELD #FLOATING BODY #FLOATING-BODY RANDOM ACCESS MEMORY (RAM) (FBRAM) #ONE-TRANSISTOR RAM #RECESSED JUNCTIONS #RETENTION #SILICON ON INSULATOR (SOI) #UNDERLAP JUNCTIONS #UTBOX #RECOMBINATION MODEL #ENGINEERING, ELECTRICAL & ELECTRONIC #PHYSICS, APPLIED |
| Tipo |
article original article publishedVersion |
