A clocking technique with power savings in virtex-based pipelined designs

This paper presents the evaluation in power consumption of a clocking technique for pipelined designs. The technique shows a dynamic power consumption saving of around 30% over a conventional global clocking mechanism. The results were obtained from a series of experiments of a systolic circuit implemented in Virtex-II devices. The conversion from a global-clocked pipelined design to the proposed technique is straightforward, preserving the original datapath design. The savings can be used immediately either as a power reduction benefit or to increase the frequency of operation of a design for the same power consumption.

Observation in the MINOS far detector of the shadowing of cosmic rays by the sun and moon

The shadowing of cosmic ray primaries by the moon and sun was observed by the MINOS far detector at a depth of 2070 mwe using 83.54 million cosmic ray muons accumulated over 1857.91 live-days. The shadow of the moon was detected at the 5.6 sigma level and the shadow of the sun at the 3.8 sigma level using a log-likelihood search in celestial coordinates. The moon shadow was used to quantify the absolute astrophysical pointing of the detector to be 0.17 +/- 0.12 degrees. Hints of interplanetary magnetic field effects were observed in both the sun and moon shadow. Published by Elsevier B.V.

Identificação de cavidades naturais por meio de eletrorresistividade na região de São Pedro (SP)

The scope of this work is the study of natural cavities in gullies through geophysics. The studied area is located in the city of São Pedro (SP) more precisely in the gully of Tucunzinho. The historic of the area shows that, since the 60s there were problems with the high rate of erosion in the gully. In addition to increased erosion, there is the appearance of cavities inside responsible for rebates, aggravating the situation. Geophysical methods have been successfully applied in environmental studies since they are noninvasive, are fast and relatively inexpensive. In order to better understand the context of formation of the pipes in relation to local geology, three arrangements were compared for the method of Electrical Resistivity, Schlumberger, Wenner and Dipole-dipole. Then, it was possible to determine which one is the best for this type of study. According to the data obtained in the field, the Schlumberger array presents more consistent results in relation to the erosive context analyzed

Development of an experiment for ultrahigh-precision g-factor

Die vorliegende Arbeit befasst sich mit der Entwicklung und dem Aufbau eines Experiments zur hochpräzisen Bestimmung des g-Faktors gebundener Elektronen in hochgeladenen Ionen. Der g-Faktor eines Teilchens ist eine dimensionslose Konstante, die die Stärke der Wechselwirkung mit einem magnetischen Feld beschreibt. Im Falle eines an ein hochgeladenes Ion gebundenen Elektrons, dient es als einer der genausten Tests der Quantenelektrodynamik gebundener Zustande (BS-QED). Die Messung wird in einem dreifach Penning-Fallen System durchgeführt und basiert auf dem kontinuierlichen Stern-Gerlach-Effekt. Der erste Teil dieser Arbeit gibt den aktuellen Wissensstand über magnetische Momente wieder. Der hier gewählte experimentelle Aufbau wird begründet. Anschließend werden die experimentellen Anforderungen und die verwendeten Messtechniken erläutert. Das Ladungsbrüten der Ionen - einer der wichtigsten Aufgaben dieser Arbeit - ist dargestellt. Seine Realisierung basiert auf einer Feld-Emissions-Spitzen-Anordnung, die die Messung des Wirkungsquerschnitts für Elektronenstoßionisation ermöglicht. Der letzte Teil der Arbeit widmet sich der Entwicklung und dem Aufbau des Penning-Fallen Systems, sowie der Implementierung des Nachweisprozesses. Gegenwärtig ist der Aufbau zur Erzeugung hochgeladener Ionen und der dazugehörigen Messung des g-Faktors abgeschlossen, einschließlich des Steuerprogramms für die erste Datennahme. Die Ionenerzeugung und das Ladungsbrüten werden die nächsten Schritte sein.

Run-time Scalable Architecture for Deblocking Filtering in H.264/AVC-SVC Video Codecs

Systems relying on fixed hardware components with a static level of parallelism can suffer from an underuse of logical resources, since they have to be designed for the worst-case scenario. This problem is especially important in video applications due to the emergence of new flexible standards, like Scalable Video Coding (SVC), which offer several levels of scalability. In this paper, Dynamic and Partial Reconfiguration (DPR) of modern FPGAs is used to achieve run-time variable parallelism, by using scalable architectures where the size can be adapted at run-time. Based on this proposal, a scalable Deblocking Filter core (DF), compliant with the H.264/AVC and SVC standards has been designed. This scalable DF allows run-time addition or removal of computational units working in parallel. Scalability is offered together with a scalable parallelization strategy at the macroblock (MB) level, such that when the size of the architecture changes, MB filtering order is modified accordingly

On the automatic integration of hardware accelerators into FPGA-based embedded systems

This paper proposes an automatic framework for the seamless integration of hardware accelerators, starting from an OpenMP-based application and an XML file describing the HW/SW partitioning. It extends a fully software architecture by generating and integrating the cores, along with the proper interfaces, and the code for scheduling and synchronization. Experimental results show that it is possible to validate different solutions only by varying the input code.

Implementation techniques for evolvable HW systems: virtual vs. dynamic reconfiguration

Adaptive hardware requires some reconfiguration capabilities. FPGAs with native dynamic partial reconfiguration (DPR) support pose a dilemma for system designers: whether to use native DPR or to build a virtual reconfigurable circuit (VRC) on top of the FPGA which allows selecting alternative functions by a multiplexing scheme. This solution allows much faster reconfiguration, but with higher resource overhead. This paper discusses the advantages of both implementations for a 2D image processing matrix. Results show how higher operating frequency is obtained for the matrix using DPR. However, this is compensated in the VRC during evolution due to the comparatively negligible reconfiguration time. Regarding area, the DPR implementation consumes slightly more resources due to the reconfiguration engine, but adds further more capabilities to the system.

A self-adaptive image processing application based on evolvable and scalable hardware

Evolvable Hardware (EH) is a technique that consists of using reconfigurable hardware devices whose configuration is controlled by an Evolutionary Algorithm (EA). Our system consists of a fully-FPGA implemented scalable EH platform, where the Reconfigurable processing Core (RC) can adaptively increase or decrease in size. Figure 1 shows the architecture of the proposed System-on-Programmable-Chip (SoPC), consisting of a MicroBlaze processor responsible of controlling the whole system operation, a Reconfiguration Engine (RE), and a Reconfigurable processing Core which is able to change its size in both height and width. This system is used to implement image filters, which are generated autonomously thanks to the evolutionary process. The system is complemented with a camera that enables the usage of the platform for real time applications.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

A Dynamically Adaptable Bus Architecture for Trading-Off Among Performance, Consumption and Dependability in Cyber-Physical Systems

Cyber-Physical Systems need to handle increasingly complex tasks, which additionally, may have variable operating conditions over time. Therefore, dynamic resource management to adapt the system to different needs is required. In this paper, a new bus-based architecture, called ARTICo3, which by means of Dynamic Partial Reconfiguration, allows the replication of hardware tasks to support module redundancy, multi-thread operation or dual-rail solutions for enhanced side-channel attack protection is presented. A configuration-aware data transaction unit permits data dispatching to more than one module in parallel, or provide coalesced data dispatching among different units to maximize the advantages of burst transactions. The selection of a given configuration is application independent but context-aware, which may be achieved by the combination of a multi-thread model similar to the CUDA kernel model specification, combined with a dynamic thread/task/kernel scheduler. A multi-kernel application for face recognition is used as an application example to show one scenario of the ARTICo3 architecture.

An Algorithm for Optimal Bipartite PLA Folding

This paper presents some results of PLA area optimizing by means of its column and row folding. A more restricted type of PLA simple folding is considered. It is introduced by Egan and Liu and called as bipartite folding. An efficient approach is presented which allows finding an optimal bipartite folding without exhaustive computational efforts.

Time-Independent Discrete Gaussian Sampling for Post-Quantum Cryptography

As the development of a viable quantum computer nears, existing widely used public-key cryptosystems, such as RSA, will no longer be secure. Thus, significant effort is being invested into post-quantum cryptography (PQC). Lattice-based cryptography (LBC) is one such promising area of PQC, which offers versatile, efficient, and high performance security services. However, the vulnerabilities of these implementations against side-channel attacks (SCA) remain significantly understudied. Most, if not all, lattice-based cryptosystems require noise samples generated from a discrete Gaussian distribution, and a successful timing analysis attack can render the whole cryptosystem broken, making the discrete Gaussian sampler the most vulnerable module to SCA. This research proposes countermeasures against timing information leakage with FPGA-based designs of the CDT-based discrete Gaussian samplers with constant response time, targeting encryption and signature scheme parameters. The proposed designs are compared against the state-of-the-art and are shown to significantly outperform existing implementations. For encryption, the proposed sampler is 9x faster in comparison to the only other existing time-independent CDT sampler design. For signatures, the first time-independent CDT sampler in hardware is proposed. 

Collimated Field Emission Beams from Metal Double-Gate Nanotip Arrays Optically Excited via Surface Plasmon Resonance

The generation of collimated electron beams from metal double-gate nanotip arrays excited by near infrared laser pulses is studied. Using electromagnetic and particle tracking simulations, we showed that electron pulses with small rms transverse velocities are efficiently produced from nanotip arrays by laser-induced field emission with the laser wavelength tuned to surface plasmon polariton resonance of the stacked double-gate structure. The result indicates the possibility of realizing a metal nanotip array cathode that outperforms state-of-the-art photocathodes.

Transmit array of transistor amplifiers illuminated by a patch array in the reactive near-field region

In this paper, a small transmit array of transistor amplifiers illuminated by a passive array of microstrip patches in the reactive near-field region is investigated as a power-combining structure. The two cases considered are when the transmit array radiates in a free space and when a passive array similar to the one used for illumination collects the radiated power. A comparison of the performance of the proposed structure against the alternative one, which uses a conventional horn antenna as a power-launching/receiving device, is also presented.

Simulations of parasitic and intrinsic capacitances related to Multiple-Gate-Field-Effect Transistor architectures

Report for the scientific sojourn carried out at the Université Catholique de Louvain, Belgium, from March until June 2007. In the first part, the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, etc. on the parasitic fringing capacitance component of multiple-gate field-effect transistors (MuGFET) is deeply analyzed using finite element simulations. Several architectures such as single gate, FinFETs (double gate), triple-gate represented by Pi-gate MOSFETs are simulated and compared in terms of channel and fringing capacitances for the same occupied die area. Simulations highlight the great impact of diminishing the spacing between fins for MuGFETs and the trade-off between the reduction of parasitic source and drain resistances and the increase of fringing capacitances when Selective Epitaxial Growth (SEG) technology is introduced. The impact of these technological solutions on the transistor cut-off frequencies is also discussed. The second part deals with the study of the effect of the volume inversion (VI) on the capacitances of undoped Double-Gate (DG) MOSFETs. For that purpose, we present simulation results for the capacitances of undoped DG MOSFETs using an explicit and analytical compact model. It monstrates that the transition from volume inversion regime to dual gate behaviour is well simulated. The model shows an accurate dependence on the silicon layer thickness,consistent withtwo dimensional numerical simulations, for both thin and thick silicon films. Whereas the current drive and transconductance are enhanced in volume inversion regime, our results show thatintrinsic capacitances present higher values as well, which may limit the high speed (delay time) behaviour of DG MOSFETs under volume inversion regime.