Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers

Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,emitting at 1.78 μm were fabricated by low pressure metal-organic vapor phase epitaxy(LP-MOVPE) and tested.The lasers exhibited threshold current of 33 mA for 900 μm long cavities at room temperature.A maximum light output power of 8 mW from one facet and an external differential quantum efficiency of 7% were also obtained.In oddition,the side mode suppression ratio (SMSR) is 27.5 dB.

Single steady frequency and narrow line width external cavity semiconductor laser

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

Studies on state and structure of noble metals in electrocatalyst made by coprecipitation method

The electrocatalysts of Pt/C, PtRu/C and Ru/C were prepared by the impregnation method. The facet characterization, the dispersion and the particle size for the catalysts were determined by means of X-ray diffraction and transmission electron microscopy. X-ray photoelectron spectroscopy was also used to analyze the state and the valency of the noble metals. The results show that the particle size was in nanometer range and the binary metals have come into being an alloy. The platinum in the catalysts existed in zero valency. The valency of the ruthenium on the surface is different from that in the body, while the ruthenium on the surface existed in oxide-form. PtRu/C and Pt/C are of good activity to the electrooxidation of hydrogen except Ru/C. PtRu/C is more tolerant of CO than Pt/C, and CO is only adsorbed on Pt.

Rapid synthesis of hexagon-shaped gold nanoplates by microwave assistant method

The microwave (MW)-based thermal process was applied to the preparation of hexagon-shaped gold nanoplates. The fort-nation of gold nanoplates occurs rapidly in a single step, carried out by directly heating a reaction mixture of HAuCl4 with sodium citrate in an MW reactor. And the gold nanoplates were characterized by UV-visible spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The experimental results indicated that the sizes and morphologies of the gold nanomaterials strongly depend both on the heating methods and molar ratio of HAuCl4 to sodium citrate in the initial reaction mixture. At the molar ratio 5 : 4 (HAuCl4 to sodium citrate), hexagonal nanoplates with large Au (111) crystallographic facet were preferentially synthesized by the MW assistant method.

二维流形三角网格模型顶点法矢量估计

提出一种以顶点的一邻域中三角形在该顶点处的顶角与对应三角形的面积比值加权三角面法矢量估计二维流形三角网格模型顶点法矢量的方法.回顾了现有的五种顶点法矢量估计方法,然后给出了新的方法.设计了利用理论法矢量与估计法矢量的夹角作为误差评价标准的实验,应用球体和椭球体模型分析了所涉及的6种估计方法的性能。

人格特征对销售员绩效的预测

This research aims to discuss it is the complexity of interpersonal association and job autonomy that influence the predictive validity of personality for job performance. In addition, for service profession, incumbents' personality can predict not only contextual performance, but also task performance. Salesclerks in shopping center and life insurance agents are selected as subjects. The job performance rating scale is produced by using Critical Incidents Technique. The research method is measuring NEO-PI and collecting direct supervisors' rating of salespeople's job performance. The research results are as follows: 1. The factor analysis result of job performance is different from the west. That is to say, the support for organizations which belongs to contextual performance in the west can not be distinguished from task performance. Therefore, in China, or to say in the shopping center selected, task performance includes both technical proficiency and the support for organizations, and contextual performance includes job dedication and interpersonal facilitation. 2. For salespeople, personality can be the antecedent of contextual performance and task performance as well. However, the predictive validity for task performance is very low. 3. The more complexity of interpersonal association, the stronger relationship between personality and job performance. 4a. The correlation between job performance and facets of Big Five is higher than the one between job performance and factors of Big Five, such as Agreeableness, whose facets have different impacts on job performance, some positive and others negative. 4b. The correlation between personality and the items of job performance rating scale is higher than the one between personality and the factors of job performance. 4. Working experience is the moderator of the relationship between personality and job performance. For salesclerks, only if the working experience of subjects is less than 3 years, achievement striving-one facet of conscientiousness-is significantly correlated with the ratio of finished sales volume at 0.01 level.

从第四轮“关于科研单位的组织与业绩的国际比较研究”（ICSOPRU）看满意度对科研单位业绩的影响

What role satisfaction plays in the factors contributing to performance continues to be a major area of interest in the study of industrial and organization psychology, but there is a lack of quantative study dealing with this question in research units. The author has a try in this paper to answer this question using the data from China, Ghana, Hungary and Mexico of the Fourth Round International Comparative Study on the Organization and Performance of Research Units (ICSOPRU). The data-analysis include the principle component factor analysis of the performance and the satisfaction items in the Fourth Round ICSOPRU Questionnaires, and the multiple classification analysis, the multivariate nominal analysis of the performance and the satisfaction factors. The main findings show that a certain facet of the satisfaction explains the largest proportion of variances of a certain dimention of the performance and has a higher relative importance in contributing to the understanding of the performance. There also a comparison between the results from the four countries and that from China.