Single steady frequency and narrow line width external cavity semiconductor laser
| Data(s) |
2003
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|---|---|
| Resumo |
A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced. A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:16Z (GMT). No. of bitstreams: 1 2766.pdf: 281776 bytes, checksum: a7ee94ab9831035c3b46cda1515350b1 (MD5) Previous issue date: 2003 SPIE. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Zhao WR; Jiang PF; Xie FZ .Single steady frequency and narrow line width external cavity semiconductor laser .见：SPIE-INT SOC OPTICAL ENGINEERING .ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICS, SEMICONDUCTORS, AND NANOTECHNOLOGIES, 5188,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2003,389-393 |
| Palavras-Chave | #半导体器件 #external cavity semiconductor laser #light feedback #single longitudinal mode #spectral line width #FEEDBACK #DIODE |
| Tipo |
会议论文 |
