Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

We investigate the development of cross-hatch grid surface morphology in growing mismatched layers and its effect on ordering growth of quantum dots (QDs). For a 60degrees dislocation (MD), the effective part in strain relaxation is the part with the Burgers vector parallel to the film/substrate interface within its b(edge) component; so the surface stress over a MD is asymmetric. When the strained layer is relatively thin, the surface morphology is cross-hatch grid with asymmetric ridges and valleys. When the strained layer is relatively thick, the ridges become nearly symmetrical, and the dislocations and the ridges inclined-aligned. In the following growth of InAs, QDs prefer to nucleate on top of the ridges. By selecting ultra-thin In0.15Ga0.85As layer (50nm) and controlling the QDs layer at just formed QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films

The effects of dislocations and Si doping on the electrical properties of n-type GaN grown by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that both electron mobility and carrier concentration are strongly influenced by edge dislocations. A moderate Si doping during the GaN growth improves the electron mobility, but the best doping effect depends on the dislocation density of the sample. High quality about 4-mu m-thick MOCVD-grown GaN film with a room temperature electron mobility as high as 1005 cm(2)/V s is obtained by optimizing growth conditions. (c) 2006 American Institute of Physics.

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

The surfactant effect of isoelectronic indium doping during metalorganic chemical vapor deposition growth of cubic GaN on GaAs (1 0 0) substrates was studied. Its influence on the optical properties and surface morphology was investigated by using room-temperature photoluminescence (PL) and atomic force microscopy. It is shown that the sample with small amount of In-doping has a narrower PL linewidth, and a smoother surface than undoped cubic GaN layers. A slight red shift of the near-band-edge emission peak was observed. These results revealed that, for small TMIn flow rates, indium played the role of the surfactant doping and effectively improved the cubic GaN film quality; for large TMIn flow rates, the alloying formation of Ga1-xInxN might have occurred. (C) 2002 Elsevier Science B.V. All rights reserved.

Indium doping effect on GaN in the initial growth stage

Three minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.

Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 degreesC, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 degreesC, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 degreesC and that of the short-wavelength quantum-dot laser previously reported. (C) 2001 American Institute of Physics.

Photovoltaic effect of cubic GaN/GaAs(100)

We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He-Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic GaN samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)00450-7].

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice

A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.

Franz-Keldysh effect and dynamical Franz-Keldysh effect of cylindrical quantum wires

We investigate the interband optical absorption spectra near the band edge of a cylindrical semiconductor quantum wire in the presence of a static electric field and a terahertz electric field polarized along the axis. Optical absorption spectra are nonperturbatively calculated by solving the low-density semiconductor Bloch equations in real space and real time. The influence of the Franz-Keldysh (FK) effect and dynamical FK effect on the absorption spectrum is investigated. To highlight the physics behind the FK effect and dynamical FK effect, the spatiotemporal dynamics of the polarization wave packet are also presented. Under a reasonable static electric field, substantial and tunable absorption oscillations appear above the band gap. A terahertz field, however, will cause the Autler-Townes splitting of the main exciton peak and the emergence of multiphoton replicas. The presented results suggest that semiconductor quantum wires have potential applications in electro-optical devices.

The Effect of MMT/Modified MMT on the Structure and Performance of the Superabsorbent Composite

A series of superabsorbent composites containing Montmorillonite (MMT), modified- Montmorillonite (OMMT) and sodium acrylate were synthesized by free-radical polymerization in aqueous solution. The structure of composites was characterized by Fourier transform infrared spectroscopy (FT-IR), transmission electron microscopy (TEM) and X-ray diffraction (XRD), and the results showed that the polymer chains were grafted onto the edge and the surface of MMT or OMMT. At the same time, the equilibrium swelling ratio of the composites was investigated as a function of the clay content and the results showed that the equilibrium swelling ratio of composites was improved by the introduction of clay.

Boundary effect of relief structure on crystallization of diblock copolymer in thin films

In this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).

Phase-accuracy comparisons and improved far-field estimates for 3-D edge elements on tetrahedral meshes

Edge-element methods have proved very effective for 3-D electromagnetic computations and are widely used on unstructured meshes. However, the accuracy of standard edge elements can be criticised because of their low order. This paper analyses discrete dispersion relations together with numerical propagation accuracy to determine the effect of tetrahedral shape on the phase accuracy of standard 3-D edgeelement approximations in comparison to other methods. Scattering computations for the sphere obtained with edge elements are compared with results obtained with vertex elements, and a new formulation of the far-field integral approximations for use with edge elements is shown to give improved cross sections over conventional formulations.

Range-edge effects promote clonal growth in peripheral populations of the one-sided wintergreen Orthilia secunda

Existing in suboptimal conditions is a frequent occurrence for species inhabiting the cusp of their ecological range. In range-edge populations of plants, the scarcity of suitable habitat may be reflected in small population sizes which may result in increased self-pollination and/or inbreeding and an increase in the incidence of clonal reproduction. These factors may result in a decrease in levels of genetic diversity and a loss of potential adaptive variation that may compromise species' ability to cope with changes in their environment, an issue that is particularly relevant today with the current concern surrounding global climate change and its effect on species' distributional ranges. In the present study, we have compared the levels of clonal reproduction in the one-sided wintergreen Orthilia secunda (L.) House in (1) populations from its main continuous distribution range, (2) populations occurring on the limits of the continuous range, and (3) peripheral populations outwith the species' continuous distribution range. Range-edge populations in Scotland and Sweden displayed significantly lower genotypic richness and diversity than those from the main area of the species' distribution in these countries. Populations from Ireland, which occur in the temperate zone rather than the boreal conditions that are the preferred habitat for the species, and which represent relict populations left over from cooler periods in the Earth's history, displayed no within-population genetic diversity, suggesting a complete lack of sexual reproduction. Furthermore, the genetic distinctiveness of the Irish populations, which contained alleles not found in either the Scottish or the Swedish populations, highlights the value of 'trailing edge' populations and supports the concept of 'parochial conservation', namely the conservation of species that are locally rare but globally common.

Water requirements as a bottleneck in the reintroduction of European roe deer to the southern edge of its range

Success rates of reintroduction programs are low, often owing to a lack of knowledge of site-specific ecological requirements. A reintroduction program of European roe deer (Capreolus capreolus (L., 1758)) in a dry Mediterranean region in Israel provides an opportunity to study the bottleneck effect of water requirements on a mesic-adapted species. Four does were hand-reared and released in a 10 ha site consisting of an early succession scrubland and a mature oak forest. We measured daily energy expenditure (DEE) and water turnover (WTO) using the doubly labeled water technique during summer and winter. DEE was similar in the summer and winter, but there was a significant difference in WTO and in the source of gained water. In winter, WTO was 3.3 L/day, of which 67% was obtained from vegetation. In summer, WTO dropped to 2.1 L/day, of which only 20% was obtained from the diet and 76% was gained from drinking. When the water source was moved to a nonpreferred habitat, drinking frequency dropped significantly, but water consumption remained constant. In a dry Mediterranean environment, availability of free water is both a physiological contraint and a behavioral constraint for roe deer. This study demonstrates the importance of physiological and behavioral feasibility studies for reintroduction programs.

The effect of co-precipitation on cadmium(II) adsorption on hydrous aluminium(III) hydroxide in the presence of a range of chelates

The adsorption of cadmium(II) on freshly precipitated aluminium(III) hydroxide in the presence of a range of chelates has been investigated. By precipitating the metal, chelate and adsorbent together it is possible to change the pH variation of the metal-complex adsorption from anionic, ligand-like, binding to cationic binding. This is a general phenomenon and is explained by the formation of a ternary Al-O-Cd-L surface species. As a consequence of the preparation method, the pH edge is found to shift to lower pH values in the presence of the chelate which gives rise to an apparent increase in adsorption of Cd2+. This increase is, in general, most pronounced at [chelate] / [metal] > 1. Computer modelling shows that the observed trends result from the competition between Al-O-Cd-L and Al-L for the available aluminium( III) binding sites. The enhanced adsorption in the presence of phenylenediaminetetraacetate is anomalous since it is observed at a [ chelate] / [metal] approximate to 0.1 and cannot be interpreted by the simple competition model.