Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films
Data(s) |
2006
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Resumo |
The effects of dislocations and Si doping on the electrical properties of n-type GaN grown by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that both electron mobility and carrier concentration are strongly influenced by edge dislocations. A moderate Si doping during the GaN growth improves the electron mobility, but the best doping effect depends on the dislocation density of the sample. High quality about 4-mu m-thick MOCVD-grown GaN film with a room temperature electron mobility as high as 1005 cm(2)/V s is obtained by optimizing growth conditions. (c) 2006 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhao DG (Zhao D. G.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Jiang DS (Jiang D. S.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Wang YT (Wang Y. T.); Liang JW (Liang J. W.) .Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films ,APPLIED PHYSICS LETTERS,2006 ,89(11):Art.No.112106 |
Palavras-Chave | #光电子学 #X-RAY-DIFFRACTION #SCATTERING #GROWTH #LAYERS |
Tipo |
期刊论文 |