High temperature operation of 5.5 mu m strain-compensated quantum cascaded lasers

We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323 K (50 degrees C) for uncoated 20-mu m-wide and 2-mm-long devices. These devices display an output power of 36 mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10 mW per facet has been measured at 83 K.

High-duty-cycle operation of GaAs/AlGaAs quantum cascade laser above liquid nitrogen temperature

We present a detailed study of lambda similar to 9.75 mu m GaAs/AIGaAs quantum cascade lasers. For a coated 2-mm-long and 40-mu m-wide laser, an optical power of 85 mu W is observed 95% duty cycle at 80 K. At a moderate driving pulse (1 kHz and 1% duty cycle), the device presents a peak power more than 20 mW even at 120 K. At 80 K, the fitted result of threshold current densities shows evidence of potential cw operation.

High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers

We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 mu m above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 mu m respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density J(th) = 2.6 kA/cm(2) gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.

Growth and characterization of InGaAs/InAlAs quantum cascade lasers

The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material system are investigated. Pronounced intersubband absorption from stacked active region of QC structure is used to monitor the wavelength of QC laser and disclose the material quality. The precise control of the epilayer thickness and the good quality of interfaces are demonstrated by the abundant narrow satellite peaks of X-ray diffraction. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 5.1-5.2 mum up to 300 K. For 10 x 800 mum(2) laser device, peak output power of similar to7.2 mW and threshold current density of 3 kA/cm(2) at room temperature are obtained. For some devices, if keep the peak output powers at the similar to2 mW level, quasi-continuous wave operation at room temperature persists more than 1 h are recorded. (Q) (C) 2001 Elsevier Science Ltd. All rights reserved.

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/In(y)A((1-y))As grown on InP substrates using molecular beam epitaxy. X-ray diffraction and cross section transmission electron microscopy have been used to ascertain the quality of the QC laser materials. Quasi-continuous wave lasing at lambda approximate to 3.54-3.7 mum at room temperature was achieved. For a laser with 1.6 mm cavity length and 20 mum ridge-waveguide width,quasi-continuous wave lasing at 34 degreesC persists for more than 30 min, with a maximum power of 11.4 mW and threshold current density of 1.2 kA cm(-2), both record values for QC lasers of comparable wavelength.

Room temperature (34 degrees C) operation of strain-compensated quantum cascade lasers

A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)As quantum cascade laser is reported. Quasi-continuous wave operation of this device at 34 degrees C with an output power of 11.4mW persisted for more than 30 minutes without obvious degradation. A very low threshold current density of 1.2KA/cm(2) at this temperature was observed.

High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

Broadband external cavity tunable quantum dot lasers with low injection current density

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

AlGaInAs-InPMicrocylinder Lasers Connected With an Output Waveguide

AlGaInAs-InPmicrocylinder lasers connected with an output waveguide are fabricated by planar technology. Room-temperature continuous-wave operation with a threshold current of 8 mA is realized for a microcylinder laser with the radius of 10 mu m and the output waveguide width of 2 mu m. The mode Q-factor of 1.2 x 10(4) is measured from the laser spectrum at the threshold. Coupled mode characteristics are analyzed by 2-D finite-difference time-domain simulation and the analytical solution of whispering-gallery modes. The calculated mode Q-factors of coupled modes are in the same order as the measured value.

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Giant non-linear absorption in Er3+-doped fluoroindate glass

Non-linear absorption is observed in Er3+-doped fluoroindate glass (in mol% 37InF2:20ZnF2:20SrF2:16BaF2:2GdF2: 2NaF:1GaF3:2ErF3) when the sample is irradiated with a CW laser emitting at 650 nm. An intensity dependence of the optical transmittance is detected. Saturation and sequential absorption of two photons are responsible for the decrease of 50% in the transmittance. The results are explained by simple models which are solved based on rate-equations for the populations of energy levels.

Effects in the population inversion of3H4 level in Tm, Tm-Tb and Tm-Eu doped germanate glasses for amplifiers applications

The population inversion of the Tm3+ in GLKZ glass involved in the 1470 nm emission (3H4 → 3F 4) as a function of Tb (or Eu) concentration was calculated by computational simulation for a CW laser pumping at 792 nm. These calculations were performed using the experimental Tm→Tb an Tm→Eu transfer rates and the spectroscopic parameters of the Tm (0.1 mol %) system. The result shows that 0.2 mol % (Tb3+) and 0.4 mol % of Eu3+ ions propitiate best population inversion of Tm3+ (0.1 mol %) maximizing the amplification coefficient of germanate (GLKZ) glass when operating as laser intensity amplification at 1470 nm. Besides the effective deactivation of the 3F4 level, the presence of Tb3+ or Eu 3+ ions introduce a depopulation of the 3H4 emitting level by means of a cross relaxation process with Tm3+ ions. In spite of this, the whole effect is verified to be benefic for using Tm-doped GLKZ glass codoped with Tb3+ or Eu3+ as a suitable material for confectioning optical amplifiers that operates in the S-band for telecommunication.

Frequency tunable continuous THz wave generation in a periodically poled fiber

An all-fiber approach to terahertz generation using a periodically poled optical fiber is proposed and experimentally demonstrated. In the proposed approach, a continuous-wave THz wave is generated at a periodically poled fiber by beating two optical wavelengths from two laser sources with the wavelength spacing corresponding to the frequency of the THz wave. The key component in the system is the periodically poled fiber, which is made by a twin-hole fiber with the fiber core residing between two holes. The twin-hole fiber is then thermally poled at a temperature of similar to 260 degrees C with a voltage of 3.3 kV applied to the silver electrodes inside the two holes to introduce second-order nonlinearity. The quasi phase matching (QPM) condition is achieved by periodically erasing the thermal poling induced second-order nonlinearity with an ultraviolet laser, which enhances the energy conversion efficiency. The proposed approach is validated by an experiment. The emission of a THz wave centered at 3.8 THz with an output power of 0.5 mu W is observed. The frequency tunability between 2.2 and 3.8 THz is also experimentally demonstrated.