Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

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Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.

Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China

Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.