Three-dimensional micro- and nano-fabrication in transparent materials by femtosecond laser

Femtosecond pulsed lasers have been widely used for materials microprocessing. Due to their ultrashort pulse width and ultrahigh light intensity, the process is generally characterized by the nonthermal diffusion process. We observed various induced microstructures such as refractive-index-changed structures, color center defects, microvoids and microcracks in transparent materials (e.g., glasses after the femtosecond laser irradiation), and discussed the possible applications of the microstructures in the fabrication of various micro optical devices [e.g., optical waveguides, microgratings, microlenses, fiber attenuators, and three-dimensional (3D) optical memory]. In this paper, we review our recent research developments on single femtosecond-laser-induced nanostructures. We introduce the space-selective valence state manipulation of active ions, precipitation and control of metal nanoparticles and light polarization-dependent permanent nanostructures, and discuss the mechanisms and possible applications of the observed phenomena.

Study of thermal behaviors in CO2 laser irradiated glass

To understand mechanisms underlying laser-induced damage of BK7 and fused silica, we calculate the temperature field of the substrates with CO2 laser irradiating at a given laser power and beam radius. We find that the two glasses show different thermal behaviors. A model is developed for estimating the time t to heat the surface of the substrates up to a particular temperature T with cw CO2 laser irradiation. We calculate theoretically the duration t that the samples are irradiated, from the beginning to visual catastrophic damage, with the assumption of damage threshold determined by the critical temperature. The duration t that the samples are irradiated, from the beginning to visual catastrophic damage, is investigated experimentally as well. Here we take the melting point or softening point as the critical temperature, given the thermomechanical coupling properties, which is enough to cause damage for BK7. Damage features are characterized by the sound of visual cracks. Finally, we calculate stresses induced by laser heating. The analysis of stress indicates that the damage of BK7 is due to the stresses induced by laser heating. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Study of thermal behaviors in CO2 laser irradiated glass

To understand mechanisms underlying laser-induced damage of BK7 and fused silica, we calculate the temperature field of the substrates with CO2 laser irradiating at a given laser power and beam radius. We find that the two glasses show different thermal behaviors. A model is developed for estimating the time t to heat the surface of the substrates up to a particular temperature T with cw CO2 laser irradiation. We calculate theoretically the duration t that the samples are irradiated, from the beginning to visual catastrophic damage, with the assumption of damage threshold determined by the critical temperature. The duration t that the samples are irradiated, from the beginning to visual catastrophic damage, is investigated experimentally as well. Here we take the melting point or softening point as the critical temperature, given the thermomechanical coupling properties, which is enough to cause damage for BK7. Damage features are characterized by the sound of visual cracks. Finally, we calculate stresses induced by laser heating. The analysis of stress indicates that the damage of BK7 is due to the stresses induced by laser heating. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Laser slotting: a new laser machining technique

This work describes a new technique for the selective removal of steel using a conventional CO2 laser beam and a novel arrangement of inert and reactive gas jets to produce the gas equivalent of a rotary cutter.

Selective epitaxial growth in silicon on insulator: Planarity and mass flow

Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

Highly flexible all-optical wavelength conversion at 2.488 Gbits/s using a multi-output-wavelength laser

An integrated multiwavelength grating cavity (MGC) laser fabricated by selective area regrowth is demonstrated. In addition to allowing wavelength conversion, the device can perform various important network functions such as space switching and multiplexing. The use of the device for these functions offers several advantages from a wavelength division multiplexing (WDM) network, such as flexibility, reduced component count, size, and the associated cost reduction.

Demonstration of multi wavelength picosecond pulse generation with resonant RF drive using an monolithically integrated multi-grating cavity (MGC) laser

Multiwavelength pulses were generated using a monolithically integrated device. The device used is an integrated InGaAs/InGaAsP/InP multi-wavelength laser fabricated by selective area regrowth. The device self pulsated on all of the four wavelength channels. 48 ps pulses were obtained which were measured by a 50GHz oscilloscope and 32GHz photodiode which was not bandwidth limited. Simultaneous multi-wavelength pulse generation was also achieved.

Supersonic laser deposition of Ti and Ti64 alloys

The importance of metal coating technologies drives the continuous improvement of metal deposition techniques for application in a wide range of industrial sectors. This work presents the foundations of a new process technology for the deposition of Ti and Ti64 coatings on various substrates using supersonic powder streams and impact site laser heating. Full density metallic deposits are obtained under appropriate impact conditions without the need for transiting the melting point of the deposited material or substrate leading to large energy savings. Details of the experimental approach will be presented along with the general characteristics of the titanium coatings produced using this novel coatings method.

High speed titanium coatings by supersonic laser deposition

The importance of metal coating technologies drives the continuous improvement of metal deposition techniques for application in a wide range of industrial sectors. This work presents the foundations of a new process technology for the deposition of titanium coatings on steel tube substrates using supersonic powder streams and impact site laser heating, known as Supersonic Laser Deposition (SLD). Metallic deposits are obtained under appropriate impact conditions without the need for exceeding the melting point of the deposited material or substrate leading to improved coating quality. Details of the experimental approach are presented along with the general characteristics of the titanium coating produced using this novel coatings method. © 2011 Elsevier B.V. All rights reserved.

Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB dc extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.

Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Electroabsorption-Modulated DFB laser Integrated.With dual-core spot-size converters

A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monolithically integrated with a buried-ridge-stripe dual-core spot-size converter (SSC) at the input and output ports was fabricated by combining selective area growth, quantum-well intermixing, and dual-core integration techniques simultaneously. These devices exhibit a threshold current of 34 mA, a side mode suppression ratio of 38.0 dB, a 3-dB modulation bandwidth of 11.0 GHz, and a modulator extinction ratio of 25.0 dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 7.3 degrees x 18 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission

Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s(-1) nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10(-10) is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated.