组蛋白变体及组蛋白替换

组蛋白作为核小体的基本组分,是染色质的结构和功能必需的。对于不同状态的染色质,核小体中会组装入相应的组蛋白变体,并且各种组蛋白变体的尾部也能发生多种修饰。这些变体通过改变核小体的空间构象和稳定性,决定基因转录的激活或沉默,DNA的修复,染色体的异染色化等。在组蛋白替换过程中,组蛋白变体是通过相应的染色质重构复合物组装入核小体,不同的变体有着不同的组装途径。对组蛋白变体的研究是近年来表观遗传学新的研究热点,也是对“组蛋白密码”的新的诠释。并且,组蛋白替换揭示了DNA-组蛋白相互作用变化的一种新的机制。

鲢和鳙单倍体和二倍体单个囊胚的细胞培养

对鲢、鳙单倍体和二倍体单个囊胚胚胎进行培养,结果表明,单倍体和二倍体细胞对培养条件的要求相差不大,其原代培养细胞的生长特点表现为新生细胞主要沿着组织块边缘重叠生长,向外扩展生长的速度非常缓慢,二倍体的鲢和鳙胚胎细胞培养物成活率相对高于单倍体,其中鲢二倍体胚胎细胞传代细胞占细胞培养数的18.06％。本结果对深入开展鲢、鳙核移植及胚胎干细胞研究具有积极意义。

BWR fuel design options for self-sustainable Th-233U fuel cycle

In this work, we investigate a number of fuel assembly design options for a BWR core operating in a closed self-sustainable Th-233U fuel cycle. The designs rely on axially heterogeneous fuel assembly structure in order to improve fertile to fissile conversion ratio. One of the main assumptions of the current study was to restrict the fuel assembly geometry to a single axial fissile zone "sandwiched" between two fertile blanket zones. The main objective was to study the effect of the most important design parameters, such as dimensions of fissile and fertile zones and average void fraction, on the net breeding of 233U. The main design challenge in this respect is that the fuel breeding potential is at odds with axial power peaking and therefore limits the maximum achievable core power rating. The calculations were performed with BGCore system, which consists of MCNP code coupled with fuel depletion and thermo-hydraulic feedback modules. A single 3-dimensional fuel assembly with reflective radial boundaries was modeled applying simplified restrictions on maximum central line fuel temperature and Critical Power Ratio. It was found that axially heterogeneous fuel assembly design with single fissile zone can potentially achieve net breeding. In this case however, the achievable core power density is roughly one third of the reference BWR core.

A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs

A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLID can be up to 122nm, covering the range of 1508-1630nm, and the output power is 11.5mW.

我国热泵技术研究现状及应用发展

本文概述了我国热泵技术－电动压缩式、热驱动吸收式和电、热驱动相结合的吸收压缩复合式热泵的研究现状和应用情况，指出存在的问题以及以后发展方向，技术政策。

神经记录用硅基多通道微电极探针的设计与制造

为了从中枢神经系统记录电信号，半导体加工技术已经被用于微电极探针的制造．介绍了一种硅基探针的设计和制造工艺流程．我们已经制造出15 μm厚，3 mn长,100μm宽的记录用探针，每根探针含有7个记录点，间隔120 μm.在制造过程中使用微机械系统(MEMS)工艺中常用的硅表面微加工工艺:等离子增强化学气相淀积(PECVD)，感应耦合等离子刻蚀(ICP)以及硅的各向异性刻蚀等．测试结果给出了探针的强度和阻抗特性．

改性的薄SOS膜CMOS器件辐射加固特性

利用注硅固相外延的方法对0.2μm SOS薄硅膜材料进行改性,并制作了单管pMOSFET,nMOSFET及54HC04电路.测量了单管的迁移率,并对样品进行了瞬态辐射实验和总剂量辐射实验,发现用改性后的SOS薄硅膜材料制作的电路,不仅具有同标准0.5μm SOS材料制作的电路相当的动态特性,而且具有很好的抗瞬态辐射能力,并且其抗总剂量辐射能力也达到了很高的水平.