Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

The excitation transfer processes in vertically self organized pairs of unequal-sized quantum dots (QD's), which are created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have been investigated experimentally by photoluminescence technique. The distance between the two dot layers is varied from 3 to 12 nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible ground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough, only one photoluminescence peak related to the large QD ensemble has been observed as a result of strong electronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the smaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

A deep level transient spectroscopy technique has been used to determine the emission activation energies and capture barriers for electrons and holes in InAs self-assembled quantum dots embedded in GaAs. The ground electron and hole energies relative to their respective energy band edges of GaAs are 0.13 and 0.09 eV. Measurements show that the capture cross section of quantum dots is thermally activated. The capture barrier of quantum dots for electrons and holes are 0.30 and 0.26 eV, respectively. The results fit well with the results of photoluminescence spectroscopy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.

Hole capture barrier of self-organized InAs quantum dots

Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self-organized InAs quantum dots. The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time. The energy of ground state of 2.5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0.09eV, and there was a barrier associated to the change of charge state of quantum dots. The capture barrier energy of such dots for hole was about 0.26eV. The work is very meaningful for further understanding the intrinsic properties of quantum dots.

Exciton dynamics in self-organized InAs/GaAs quantum dots

Using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized InAs/GaAs quantum dots (QDs). It is found that the exciton lifetime in self-organized InAs/GaAs QDs is around 1 ns, almost independent of InAs layer thickness. The temperature dependence of the exciton lifetime varies from sample to sample, but no obvious experimental evidence was found that the lifetime is related to the delta-function of density of states in QDs. We have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the QDs.

Improvement of Ge self-organized quantum dots by use of Sb surfactant

A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3].

Self-assembled GaAs quantum rings by MBE droplet epitaxy

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE

High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Importance of self-consistency in relativistic continuum random-phase approximation calculations

A fully consistent relativistic continuum random phase approximation (RCRPA) is constructed, where the contribution of the continuum spectrum to nuclear excitations is treated exactly by the single-particle Green's function technique. The full consistency of the calculations is achieved that the same effective Lagrangian is adopted for the ground state and the excited states. The negative energy states in the Dirac sea are also included in the single-particle Green's function in the no-sea approximation. The currents from the vector meson and photon exchanges and the Coulomb interaction in RCRPA are treated exactly. The spin-orbit interaction is included naturally in the relativistic frame. Numerical results of the RCRPA are checked with the constrained relativistic mean-field theory. We study the effects of the inconsistency, particularly the currents and Coulomb interaction in various collective multipole excitations.

Self-assembled 3D Architectures of LuBO3 : Eu3+: Phase-selective synthesis, growth mechanism, and tunable luminescent properties

Rhombohedral-calcite and hexagonal-vaterite types of LuBO:Eu3+ microparticles with various complex self-assembled 3D architectures have been prepared selectively by an efficient surfactant- and template-free hydrothermal process for the first time. X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectrometry, transmission electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, photoluminescence, and cathodoluminescence spectra as well as kinetic decays were used to characterize the samples.

Self-assembly of lambda-DNA networks/Ag nanoparticles: Hybrid architecture and active-SERS substrate

In this article, highly rough and stable surface enhanced Raman scattering (SERS)-active substrates had been fabricated by a facile layer by-layer technique. Unique lambda-DNA networks and CTAB capped silver nanoparticles (AgNP) were alternatively self-assembled on the charged mica surface until a desirable number of bilayers were reached. The as-prepared hybrid architectures were characterized by UV-vis spectroscopy, tapping mode atomic force microscopy (AFM) and confocal Raman microscopy, respectively.

Charge Transport Processes of Immobilized Heteropolyanions at Self-assembled Monolayer Modified Gold Electrode by Electrochemical Quartz Crystal Microbalance Measurement

The in situ electrochemical quartz crystal microbalance(EQCM) technique was used to investigate the ion transport of immobilized heteropolyanions at a self-assembled monolayer(SAM) modified gold electrode during electrochemical redox process. A mixed transfer method was presented to analyse the abnormal change of resonant frequency based on the simultaneous insertion/extraction of different ions. The results indicate that the migration of HSO4- anions was indispensable in the redox process of the heteropolyan ions in a I mol/L H2SO4 solution and played a key role in the abnormal change of the resonant frequency. Such a change was attributed to different packing densities derived by means of differently immobilized methods.

Evaluation of coverage of self-assembled polyaniline-analogue monolayer by capacitance measurements

A method is developed to estimate the coverage of an electropolymerizable aniline-analogue monolayer (mixture of 2- and 3-aminophenols, 2/3-ATP) by measuring the charge capacitance of the electrode (theta = 81%). The technique of filling the uncovered area (defect sites) of the aniline-analogue monolayer with alkanethiols with long alkane chains (1-decanethiol, 1-DT) has been used to determine the coverage. The dielectric constant (permittivity) of the PANI-analogue monolayer was determined to 8.4. Adsorption kinetics of 1-DT was also studied, and the value of the rate constant of the secondary adsorption was measured to 0.9 mol(-1) dm(3) s(-1).

A biodegradable triblock copolymer poly(ethylene glycol)-b-poly(L-lactide)-b-poly(L-lysine): Synthesis, self-assembly and RGD peptide modification

A novel biodegradable triblock copolymer poly(ethylene glycol)-b-poly(L-lactide)-b-poly(L-lysine) (PEG-PLA-PLL) was synthesized by acidolysis of poly(ethylene glycol)-b-poly(L-lactide)-b-poly(F-benzyloxycarbonyl-L-lysine) (PEG-PLA-PZLL) obtained by the ring-opening polymerization (ROP) of epsilon-benzyloxycarbonyl-L-lysine N-carboxyanhydride (ZLys NCA) with amino-terminated PEG-PLA-NH2 as a macro-initiator, and the pendant amino groups of the lysine residues were modified with a peptide known to modulate cellular functions, Gly-Arg-Gly-Asp-Ser-Tyr (GRGDSY, abbreviated as RGD) in the presence of 1,1'-carbonyldiimidazole (CDI). The structures of PEG-PLA-PLL/RGD and its precursors were confirmed by H-1 NMR, FT-IR, amino acid analysis and XPS analysis. The cell adhesion and cell spread on the PEG-PLA-PLL/RGD film were enhanced compared to those on pure PLA film. Therefore, the novel RGD-grafted triblock copolymer is promising for cell or tissue engineering applications. Both copolymers PEG-PLA-PZLL and PEG-PLA-PLL showed an amphiphilic nature and could self-assemble into micelles of homogeneous spherical morphology. The micelles were determined by fluorescence technique, dynamic light scattering (DLS), and field emission scanning electron microscopy (ESEM) and could be expected to find application in drug and gene delivery systems.