Refresh-free dynamic standard-cell based memories: Application to a QC-LDPC decoder

The area and power consumption of low-density parity check (LDPC) decoders are typically dominated by embedded memories. To alleviate such high memory costs, this paper exploits the fact that all internal memories of a LDPC decoder are frequently updated with new data. These unique memory access statistics are taken advantage of by replacing all static standard-cell based memories (SCMs) of a prior-art LDPC decoder implementation by dynamic SCMs (D-SCMs), which are designed to retain data just long enough to guarantee reliable operation. The use of D-SCMs leads to a 44% reduction in silicon area of the LDPC decoder compared to the use of static SCMs. The low-power LDPC decoder architecture with refresh-free D-SCMs was implemented in a 90nm CMOS process, and silicon measurements show full functionality and an information bit throughput of up to 600 Mbps (as required by the IEEE 802.11n standard).

On the performance of LDPC and turbo decoder architectures with unreliable memories

In this paper, we investigate the impact of faulty memory bit-cells on the performance of LDPC and Turbo channel decoders based on realistic memory failure models. Our study investigates the inherent error resilience of such codes to potential memory faults affecting the decoding process. We develop two mitigation mechanisms that reduce the impact of memory faults rather than correcting every single error. We show how protection of only few bit-cells is sufficient to deal with high defect rates. In addition, we show how the use of repair-iterations specifically helps mitigating the impact of faults that occur inside the decoder itself.

Mitigating the Impact of Faults in Unreliable Memories for Error-Resilient Applications

Inherently error-resilient applications in areas such as signal processing, machine learning and data analytics provide opportunities for relaxing reliability requirements, and thereby reducing the overhead incurred by conventional error correction schemes. In this paper, we exploit the tolerable imprecision of such applications by designing an energy-efficient fault-mitigation scheme for unreliable data memories to meet target yield. The proposed approach uses a bit-shuffling mechanism to isolate faults into bit locations with lower significance. This skews the bit-error distribution towards the low order bits, substantially limiting the output error magnitude. By controlling the granularity of the shuffling, the proposed technique enables trading-off quality for power, area, and timing overhead. Compared to error-correction codes, this can reduce the overhead by as much as 83% in read power, 77% in read access time, and 89% in area, when applied to various data mining applications in 28nm process technology.

Queering Memories of the Troubles: Performing LGBTQ testimonies in Northern Ireland

In Northern Ireland, decades of religious and political unrest led to the marginalization not only of rights but also the experiences and voices of those who identify as Lesbian, Gay, Bisexual, Trans and/or Queer (LGBTQ). The peace process has arguably created space in which sexual minorities can voice their experiences and articulate counter-memories to those that tend to dominate ethno-nationalist commemorations of the conflict. This essay explores two productions of Northern Ireland’s first publicly funded gay theatre company, TheatreofplucK, led by artistic director Niall Rea: D.R.A.G (Divided, Radical and Gorgeous) was first performed in 2011 and explores the personal experiences of a Belfast drag queen in the form of personal testimonial monologue. The forthcoming (November 2015) performed archive installation, Tr<uble, by Shannon Yee, assembles true-life testimonies of the LGBTQ community in Northern Ireland during and after the Troubles. I will explore how performed and performative memories have the potential to ‘queer’ remembrance of the Troubles.

Remembering forwards: or how to live together in the future with divided memories

Memory is thought to be about the past. The past is a problem in conflict transformation. This lecture suggests memory can also be about the future. It introduces the notion of remembering forwards, which is contrasted with remembering backwards. The distinction between these two forms of remembering defines the burden of memory in post-conflict societies generally and specifically in Ireland. In societies emerging out of conflict, where divided memories in part constituted the conflict, social memory privileges remembering backward. Collective and personal memories elide within social memory to perpetuate divided group identities and contested personal narratives. Above all, social memory works to arbitrate the future, by predisposing an extreme memory culture that locks people into the past. Forgetting the past is impossible and undesirable. What is needed in societies emerging out of conflict is to be released from the hold that oppressive and haunting memories have over people. This lecture will suggest that this is found in the idea of remembering forwards. This is not the same as forgetting. It is remembering to cease to remember oppressive and haunting memories. It does not involve non-remembrance but active remembering: remembering to cease to remember the past. While the past lives in us always, remembering forwards assists us in not living in the past. Remembering forwards thus allows us to live in tolerance in the future despite the reality that divided memories endure and live on. The lecture further argues that these enduring divided memories need to be reimagined by the application of truth, tolerance, togetherness and trajectory. The lecture suggests that it is through remembering forwards with truth, tolerance, togetherness and trajectory that people in post-conflict societies can inherit the future despite their divided pasts and live in tolerance in the midst of contested memories.

Electrical characterization of metal-oxide-polymer devices for non-volatile memory applications

The objective of this thesis is to study the properties of resistive switching effect based on bistable resistive memory which is fabricated in the form of Al2O3/polymer diodes and to contribute to the elucidation of resistive switching mechanisms. Resistive memories were characterized using a variety of electrical techniques, including current-voltage measurements, small-signal impedance, and electrical noise based techniques. All the measurements were carried out over a large temperature range. Fast voltage ramps were used to elucidate the dynamic response of the memory to rapid varying electric fields. The temperature dependence of the current provided insight into the role of trapped charges in resistive switching. The analysis of fast current fluctuations using electric noise techniques contributed to the elucidation of the kinetics involved in filament formation/rupture, the filament size and correspondent current capabilities. The results reported in this thesis provide insight into a number of issues namely: (i) The fundamental limitations on the speed of operation of a bi-layer resistive memory are the time and voltage dependences of the switch-on mechanism. (ii) The results explain the wide spread in switching times reported in the literature and the apparently anomalous behaviour of the high conductance state namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon which had remained elusive since it was first reported in the ‘60s. (iii) Assuming that the current is filamentary, Comsol simulations were performed and used to explain the observed dynamic properties of the current-voltage characteristics. Furthermore, the simulations suggest that filaments can interact with each other. (iv) The current-voltage characteristics have been studied as a function of temperature. The findings indicate that creation and annihilation of filaments is controlled by filling and neutralizing traps localized at the oxide/polymer interface. (v) Resistive switching was also studied in small-molecule OLEDs. It was shown that the degradation that leads to a loss of light output during operation is caused by the presence of a resistive switching layer. A diagnostic tool that predicts premature failure of OLEDs was devised and proposed. Resistive switching is a property of oxides. These layers can grow in a number of devices including, organic light emitting diodes (OLEDs), spin-valve transistors and photovoltaic devices fabricated in different types of material. Under strong electric fields the oxides can undergo dielectric breakdown and become resistive switching layers. Resistive switching strongly modifies the charge injection causing a number of deleterious effects and eventually device failure. In this respect the findings in this thesis are relevant to understand reliability issues in devices across a very broad field.

Remembering, imagining, false memories & personal meanings

The Self-Memory System encompasses the working self, autobiographical memory and episodic memory. Specific autobiographical memories are patterns of activation over knowledge structures in autobiographical and episodic memory brought about by the activating effect of cues. The working self can elaborate cues based on the knowledge they initially activate and so control the construction of memories of the past and the future. It is proposed that such construction takes place in the remembering–imagining system – a window of highly accessible recent memories and simulations of near future events. How this malfunctions in various disorders is considered as are the implication of what we term the modern view of human memory for notions of memory accuracy. We show how all memories are to some degree false and that the main role of memories lies in generating personal meanings.

La pure vérité cachée

[Mazarinade. 1649]

Brief memories of Niagara : its rapids, falls, and whirlpool /

On cover and spine: Memories of Niagara.