Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure

Ge/Si multilayer structures with a bimodal distribution of the island spacing in the first layer have been investigated by atomic-force microscopy and transmission electron microscopy. Besides the vertical alignment, some oblique alignments of stacked islands are observed. The presence of the elastic interaction between islands is responsible for the oblique alignment of stacked islands. (C) 2000 American Institute of Physics. [S0003-6951(00)04644-1].

Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice

Threading dislocations in the III-V heterostructure system are investigated based on the observation of dislocations in the In0.3Ga0.7As/GaAs superlattice with transmission electron microscope. To explain both the presence and orientation of threading dislocations in the epilayers an alloy effect on the dislocation lines in ternary III-V compounds is proposed, and, in addition, a pseudo-stable state for threading dislocations in binary compounds is recognized. (C) 1998 Elsevier Science B.V. All rights reserved.

Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure that misfit dislocation lines deviate from the [110] directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.

Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As system grown on the (001) InP substrate that misfit dislocation lines deviate [110] directions at an angle with its value depending on the gallium content. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on misfit dislocations in the interface between the III-V ternary compounds. (C) 1998 American Institute of Physics.

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

n-ZnO/p-Si heterojunction light-emitting diodes (LEDs) show weak defect-related electroluminescence (EL). In order to analyze the origin of the weak EL, the energy band alignment and interfacial microstructure of ZnO/Si heterojunction are investigated by x-ray photoelectron spectroscopy. The valence band offset (VBO) is determined to be 3.15 +/- 0.15 eV and conduction band offset is -0.90 +/- 0.15 eV, showing a type-II band alignment. The higher VBO means a high potential barrier for holes injected from Si into ZnO, and hence, charge carrier recombination takes place mainly on the Si side rather than the ZnO layer. It is also found that a 2.1 nm thick SiOx interfacial layer is formed at the ZnO/Si interface. The unavoidable SiOx interfacial layer provides to a large number of nonradiative centers at the ZnO/Si interface and gives rise to poor crystallinity in the ZnO films. The weak EL from the n-ZnO/p-Si LEDs can be ascribed to the high ZnO/Si VBO and existence of the SiOx interfacial layer.

CHANNELING ALIGNMENT FOR EPITAXIAL LIGHT-MASS FILM ON HEAVY-MASS SUBSTRATE

A simple procedure for obtaining a background-free backscattering spectrum of a light-mass film on a heavy-mass substrate by a normal incidence/grazing exit geometry has been described. Using this method such films can be aligned rapidly and accurately, and the impurity or defect information on the films can be obtained without need for realignment. Example is given from MeV Li-3+ analysis of a deposited film of Si on a single crystal substrate of yttria-stabilized, cubic zirconia.

Design,Fabrication,and Testing of Single-Side Alignment of 16×0.8nm Arrayed-Waveguide Grating

A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.

Competition in rotation-alignment between high-j neutrons and protons in transfermium nuclei

The study of rotation-alignment of quasiparticles probes sensitively the properties of high-j intruder orbits. The distribution of very-high-j orbits, which are consequences of the fundamental spin-orbit interaction, links with the important question of single-particle levels in superheavy nuclei. With the deformed single-particle states generated by the standard Nilsson potential, we perform Projected Shell Model calculations for transfermium nuclei where detailed spectroscopy experiments are currently possible. Specifically, we study the systematical behavior of rotation-alignment and associated band-crossing phenomenon in Cf, Fm, and No isotopes. Neutrons and protons from the high-j orbits are found to compete strongly in rotation-alignment, which gives rise to testable effects. Observation of these effects will provide direct information on the single-particle states in the heaviest nuclear mass region.

兰州重离子治癌研究装置的准直测量技术；Survey and alignment for the heavy ion therapy facility at IMP

介绍了中国科学院近代物理研究所重离子治癌装置的安装定位测量技术和方法。利用激光跟踪仪通过控制网的建立,和多重坐标系的转换,使最后的磁铁安装径向相对误差不超过±(0.05-0.1)mm,真空管道的横向及竖向精度也达到了±(0.1-0.2)mm。

Rotation alignment in neutron-rich Cr isotopes: A probe of deformed single-particle levels across N=40

Recent experiments have reached the neutron-rich Cr isotope with N = 40 and confirmed enhanced collectivity near this subshell. The current data focus on low-spin spectroscopy only, with little information on the states where high-j particles align their spins with the system rotation. By applying the projected shell model, we show that rotation alignment occurs in neutron-rich even-even Cr nuclei as early as spin 8 (h) over bar h and, owing to shell filling, the aligning particles differ in different isotopes. It is suggested that observation of irregularities in moments of inertia is a direct probe of the deformed single-particle scheme in this exotic mass region.

HIRFL微束辐照装置偏转磁铁的安装准直；Alignment of Dipole Magnet in Micro-beam Line of HIRFL

微束辐照装置是将辐照样品的束斑缩小到μm量级,能够对辐照粒子进行准确定位和精确计数的实验平台,是开展辐照材料学、辐照生物学、辐照生物医学和微加工的有力工具。μm量级的束流对设备的准直安装也提出了极高的要求,对于HIRFL系统微束线上的二极磁铁,由于其所在位置的空间相当狭小,使得设计就位时磁铁的位置及角度与地面做基准时的不同,这给安装准直工作带来了挑战。通过引入变化的基准坐标值的办法,有效解决了这一难题,使全部磁铁安装误差都控制在了要求的公差范围之内。