Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Development of a low actuation voltage electrostatic RF MEMS switch

The research focused on the design, fabrication and measurement of a low actuation voltage micro electro mechanical high frequency switch. The fabricated micro switch offers outstanding radio frequency parameters for a very large frequency band, with actuation voltage and switching time less than 20 volts and 3 micro seconds, respectively.

Pi-shaped MEMS architecture for lowering actuation voltage of RF switching

A wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a high impedance short transmission line. The device can act as a switch for any desired frequency whilst requiring only 12volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.

RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.

Design and simulation of a low-actuation-voltage MEMS switch

This paper presents a low-actuation-voltage micro-electromechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than -26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 μs, respectively, with an actuation voltage of less than 15 V.

Design and fabrication of an electrode for low-actuation-voltage electrowetting-on-dielectric devices

This paper presents the design and fabrication of an electrode for low-actuation-voltage electrowetting-on-dielectric (EWOD) devices. The electrode which takes advantage of a novel shape is used to develop an EWOD device. The fabrication process for the electrode and the device development includes laser exposure, wet developing, etching, and stripping. A dielectric layer of 5% (wt./wt.) Polyvinylidene difluoride (PVDF) is used for the electrode insulation. In addition, a very thin (50 nm) layer of Teflon is coated on the EWOD surface to provide hydrophobicity. It is observed that a thin and high dielectric-constant layer can reduce the actuation voltage in the EWOD device. An actuation voltage of 14.8 V was achieved by the EWOD device.

Reducing electrowetting-on-dielectric actuation voltage using a novel electrode shape and a multi-layer dielectric coating

This paper presents design and fabrication of an electrowetting-on-dielectric (EWOD) device using a novel electrode shape and a multi-layer dielectric coating that reduce the actuation voltage of the device to less than 12.6 V. The fabrication of the EWOD electrodes is carried out in several steps including laser exposure, wet developing, etching, and stripping. A high-dielectric-constant multi-layer dielectric coating containing a 770 nm thick Polyvinylidene difluoride (PVDF) layer and a 1 µm thick Cyanoethyl pullulan (CEP) layer, is deposited on the EWOD electrodes for insulation. This multi-layer dielectric structure exhibits a high capacitance per unit area, and the novel electrode shape changes the actuation force at the droplet contact line reducing the voltage required to operate the device. In addition, an overlaying Teflon layer of 50 nm is placed on top of the dielectric structure to provide a hydrophobic surface for droplet manipulation. It is observed from the experiments that the electrode shape and the dielectric structure have contributed to the reduction of the actuation voltage of the EWOD device.

High bandwidth voltage and current control design for voltage source converters

In this paper, two different high bandwidth converter control strategies are discussed. One of the strategies is for voltage control and the other is for current control. The converter, in each of the cases, is equipped with an output passive filter. For the voltage controller, the converter is equipped with an LC filter, while an output has an LCL filter for current controller. The important aspect that has been discussed the paper is to avoid computation of unnecessary references using high-pass filters in the feedback loop. The stability of the overall system, including the high-pass filters, has been analyzed. The choice of filter parameters is crucial for achieving desirable system performance. In this paper, the bandwidth of achievable performance is presented through frequency (Bode) plot of the system gains. It has been illustrated that the proposed controllers are capable of tracking fundamental frequency components along with low-order harmonic components. Extensive simulation results are presented to validate the control concepts presented in the paper.

Development of a switch mode assisted linear amplifier for use as a high fidelity voltage source

Frequency Domain Spectroscopy (FDS) is one of the major techniques used for determining the condition of the cellulose based paper and pressboard components in large oil/paper insulated power transformers. This technique typically makes use of a sinusoidal voltage source swept from 0.1 mHz to 1 kHz. The excitation test voltage source used must meet certain characteristics, such as high output voltage, high fidelity, low noise and low harmonic content. The amplifier used; in the test voltage source; must be able to drive highly capacitive loads. This paper proposes that a switch-mode assisted linear amplifier (SMALA) can be used in the test voltage source to meet these criteria. A three level SMALA prototype amplifier was built to experimentally demonstrate the effectiveness of this proposal. The developed SMALA prototype shows no discernable harmonic distortion in the output voltage waveform, or the need for output filters, and is therefore seen as a preferable option to pulse width modulated digital amplifiers. The lack of harmonic distortion and high frequency switching noise in the output voltage of this SMALA prototype demonstrates its feasibility for applications in FDS, particularly on highly capacitive test objects such as transformer insulation systems.

Electric field induced ultra-high actuation in a bulk carbon nanotube structure

Electric-field induced nonlinear actuation behavior is demonstrated in a bulk nanotube (CNT) structure under ambient conditions. Completely recoverable and non-degradable actuation over several cycles of electric-field is measured in these structures. A symmetric and polarity independent displacement corresponding up to an axial strain of 14% is measured upon application of a low strength electric field of 4.2 kV/m in the axial direction. However, a much lower strain of similar to 1% is measured in the radial (or, transverse) direction. Furthermore, the electric field induced actuation increases by more than a factor of 2 upon impregnating the CNT cellular structure with copper oxide nano-particles. An electrostriction mechanism, based on the electric-field induced polarization of CNT strands, is proposed to account for the reported actuation behavior. (C) 2013 Elsevier Ltd. All rights reserved.

Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing

We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.

Low actuation-voltage shift in MEMS switch using ramp dual-pulse

This paper proposes a ramp dual-pulse actuation-voltage waveform that reduces actuation-voltage shift in capacitive microelectromechanical system (MEMS) switches. The proposed waveform as well as two reported waveforms (dual pulse, and novel dual-pulse) are analyzed using equivalent-circuit and equation models. Based on the analysis outcome, the paper provides a clear understanding of trapped charge density in the dielectric. The results show that the proposed actuation-voltage waveform successfully reduces trapped charge and increases lifetime due to lowering of actuation-voltage shift. Using the proposed actuation-voltage waveform, the membrane reaches a steady state on the electrode faster.

Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks

This paper presents a fast and accurate method for extracting the scattering parameters of a RF MEMS switch by using its essential parameters. A neural network is developed for parametric modeling of the switch. The essential parameters of the switch are analyzed in terms of its return loss and isolation with variation of its geometrical component values. Simulation results show that the proposed approach can be used to accurately model the RF characteristics of RF-MEMS switches. The results show good agreement between the neural network prediction and electromagnetic simulations.