33 resultados para Nb-doped
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
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It is known that the dielectric properties of BaTiO3 (BT) are strongly dependent on its grain size. Coarse-grained ceramics of pure BT showed lower dielectric constant at room temperature then fine grained. Many authors considered that when the grain size is lower than 700 nm, the lattice of BT changes from tetragonal to pseudocubic, and the dielectric constant value is very low. In the doped BT this effect is more complex, because it is necessary to consider also the influence of dopants. The grain size effect on the structure and dielectric properties of niobium-doped barium titanate was investigated. Niobium-doped barium titanate was prepared from powders obtained by doping of commercial barium titanate and from organometallic complex using citrates as precursors (Pechini procedure). The crystal and microstructure of sintered niobium-doped barium titanate were determined. Dielectric constant and dissipation factor were measured. The observation confirmed that the structure and properties are strongly dependent on grain size. (C) 2003 Elsevier B.V. B.V. All rights reserved.
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In this work, the effect of Nb2O5 addition on the microstructure of BaTiO3 was studied. From XRD diagrams, a diminution in tetragonality parameters with an increase in dopant concentration was observed. In order to determine morphology and composition of secondary phases in niobium-doped barium titanate, EDAX and SEM analyses were carried out. It was found that a concentration of dopant higher than 0.15 mol% leads to fine-grained BaTiO3 without abnormal grain growth. Otherwise, compositions of secondary phases correspond to the titanium-rich region in the BaO-TiO2 phase diagram. Besides, the titanium content in the precipitate increases with the Nb2O5 addition. (C) 2002 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis.
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BaCe 0.9-xNb xY 0.1O 3-δ (where x=0, 0.01, 0.03 and 0.05) powders were synthesized by solid-state reaction to investigate the influence of Nb concentration on chemical stability and electrical properties of the sintered samples. The dense electrolyte pellets were formed from the powders after being uniaxially pressed and sintered at 1550 °C. The electrical conductivities determined by impedance measurements in temperature range of 550-750 °C in different atmospheres (dry argon and wet hydrogen) showed a decreasing trend with an increase of Nb content. For all samples higher conductivities were observed in the wet hydrogen than in dry argon atmosphere. The chemical stability was enhanced with increasing of Nb concentration. It was found that BaCe 0.87Nb 0.03Y 0.1O 3-δ is the optimal composition that satisfies the opposite demands for electrical conductivity and chemical stability, reaching 0.8×10 -2 S cm -1 in wet hydrogen at 650 °C compared to 1.01×10 -2 S cm -1 for undoped electrolyte. © 2012 Elsevier Ltd and Techna Group S.r.l.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The influence of the addition of dopants on the microstructure development and electrical properties of BaTiO3 doped with 0.2, 0.4, 0.6, 0.8 mol% of Nb and 0.01 mol% of Mn based compounds was studied. Doped barium titanate was prepared using the polymeric precursor method from citrate solutions. The powders calcined at 700°C for 4 hours were analysed by infrared (IR) spectroscopy to verify the presence of carbonates, and by X-ray diffraction (XRD) for phase formation. The phase composition, microstructure and dielectric properties show a strong dependence on the amount of added niobium.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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The effect of calcination temperature during the formation of the solid solution Sn(0.9)Ti(0.1)O(2) doped with 1.00 mol % CoO and 0.05 mol % Nb(2)O(5) is presented. The structural characteristics of this system were studied using X-ray diffraction, and the changes in phase formation were analyzed using the Rietveld method. With an increase in calcination temperature, there is increasing miscibility of Ti into the (Ti,Sn)O(2) phase and near 1000 degrees C, and the remaining TiO(2) (anatase) was transformed into the rutile phase. The sintering process, monitored using dilatometry, suggests two mass transport mechanisms, one activated close to 900 degrees C associated with the presence of TiO(2) (anatase) and the second mechanism, occurring between 1200 and 1300 degrees C, is attributed to a faster grain boundary diffusion caused by oxygen vacancies. (C) 2008 International Centre for Diffraction Data.