The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
20/05/2014
20/05/2014
15/11/2004
|
| Resumo |
Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved. |
| Formato |
155-159 |
| Identificador |
http://dx.doi.org/10.1016/j.matchemphys.2004.06.035 Materials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 88, n. 1, p. 155-159, 2004. 0254-0584 http://hdl.handle.net/11449/39566 10.1016/j.matchemphys.2004.06.035 WOS:000224370900027 |
| Idioma(s) |
eng |
| Publicador |
Elsevier B.V. |
| Relação |
Materials Chemistry and Physics |
| Direitos |
closedAccess |
| Palavras-Chave | #PZT #Nb doped PZT #FERAM #polymeric precursor |
| Tipo |
info:eu-repo/semantics/article |
