Silicon monosulphide radiative association

Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E(1)Sigma(+) and A(1)Pi states of SiS. For temperatures ranging from similar to 1000 to similar to 14 000 K, the rate coefficients are found to vary from 8.43 x 10(-17) to 2.69 x 10(-16) cm(3) s(-1). Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.

Radiative association of C and P, and Si and P atoms

The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 x 10(-18) to 1.62 x 10(-18) cm(3) s(-1) and from 3.73 x 10(-20) to 7.03 x 10(-20) cm(3) s(-1) for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature.

Formation of SiC by radiative association

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Radiative association of Ti and O atoms

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The formation of AlF by radiative association

The formation of the aluminium monofluoride molecule AlF by radiative association of the Al and F atoms is estimated. The radiative association of Al(P-2) and F(P-2) atoms is found to be dominated by the approach along the A(1) potential energy curve accompanied by spontaneous emission into the X-1 Sigma(+) ground state of the AlF. For temperatures ranging from 300 to 14 000 K, the rate coefficients are found to vary from 1.35 x 10(-17) to 9.31 x 10(-16) cm(3) s(-1), respectively. These values indicate that only a small amount of AlF molecules can be formed by radiative association in the inner envelope of carbon-rich stars and other hostile environments.