Silicon monosulphide radiative association


Autoria(s): Andreazza, C. M.; Marinho, E. P.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

26/02/2014

20/05/2014

26/02/2014

20/05/2014

01/09/2007

Resumo

Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E(1)Sigma(+) and A(1)Pi states of SiS. For temperatures ranging from similar to 1000 to similar to 14 000 K, the rate coefficients are found to vary from 8.43 x 10(-17) to 2.69 x 10(-16) cm(3) s(-1). Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.

Formato

365-368

Identificador

http://dx.doi.org/10.1111/j.1365-2966.2007.12081.x

Monthly Notices of the Royal Astronomical Society. Malden: Wiley-blackwell, v. 380, n. 1, p. 365-368, 2007.

0035-8711

http://hdl.handle.net/11449/24777

10.1111/j.1365-2966.2007.12081.x

WOS:000249422900048

Idioma(s)

eng

Publicador

Wiley-Blackwell

Relação

Monthly Notices of the Royal Astronomical Society

Direitos

closedAccess

Palavras-Chave #atomic data #atomic processes #circumstellar matter #ISM : molecules
Tipo

info:eu-repo/semantics/article