Formation of SiC by radiative association


Autoria(s): Andreazza, C. M.; Vichietti, R. M.; Marinho, E. P.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

30/09/2013

20/05/2014

30/09/2013

20/05/2014

21/12/2009

Resumo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Rate coefficients for radiative association of silicon and carbon atoms to form silicon carbide molecule (SiC) are estimated. The radiative association of Si(3P) and C(3P) atoms mainly occurs through the C3 Pi state followed by radiative decay to the X3 Pi state. For the temperature range of 300-14 000 K, the rate coefficients slowly increase with temperature and they can be expressed by K(T) = 2.038 x 10-17(T/300)-0.01263 exp(-136.73/T) cm3 s-1.

Formato

1892-1896

Identificador

http://dx.doi.org/10.1111/j.1365-2966.2009.15589.x

Monthly Notices of The Royal Astronomical Society. Malden: Wiley-blackwell Publishing, Inc, v. 400, n. 4, p. 1892-1896, 2009.

0035-8711

http://hdl.handle.net/11449/24945

10.1111/j.1365-2966.2009.15589.x

WOS:000272532100022

WOS000272532100022.pdf

Idioma(s)

eng

Publicador

Wiley-Blackwell Publishing, Inc

Relação

Monthly Notices of the Royal Astronomical Society

Direitos

openAccess

Palavras-Chave #atomic data #atomic process #circumstellar matter #ISM: molecules
Tipo

info:eu-repo/semantics/article