Formation of SiC by radiative association
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
---|---|
Data(s) |
30/09/2013
20/05/2014
30/09/2013
20/05/2014
21/12/2009
|
Resumo |
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Rate coefficients for radiative association of silicon and carbon atoms to form silicon carbide molecule (SiC) are estimated. The radiative association of Si(3P) and C(3P) atoms mainly occurs through the C3 Pi state followed by radiative decay to the X3 Pi state. For the temperature range of 300-14 000 K, the rate coefficients slowly increase with temperature and they can be expressed by K(T) = 2.038 x 10-17(T/300)-0.01263 exp(-136.73/T) cm3 s-1. |
Formato |
1892-1896 |
Identificador |
http://dx.doi.org/10.1111/j.1365-2966.2009.15589.x Monthly Notices of The Royal Astronomical Society. Malden: Wiley-blackwell Publishing, Inc, v. 400, n. 4, p. 1892-1896, 2009. 0035-8711 http://hdl.handle.net/11449/24945 10.1111/j.1365-2966.2009.15589.x WOS:000272532100022 WOS000272532100022.pdf |
Idioma(s) |
eng |
Publicador |
Wiley-Blackwell Publishing, Inc |
Relação |
Monthly Notices of the Royal Astronomical Society |
Direitos |
openAccess |
Palavras-Chave | #atomic data #atomic process #circumstellar matter #ISM: molecules |
Tipo |
info:eu-repo/semantics/article |