Structural characterization of undoped and Sb-doped SnO2 thin films fired at different temperatures

SnO2 thin films were obtained by the sol-gel method starting from inorganic precursor solutions. In this work, we compare the structure of undoped and Sb-doped SnO2 films prepared by dip-coating. The films were deposited on quartz substrates and then fired at different temperatures ranging from 383 up to 1173 K. The density and the thickness of the films were determined by X-ray reflectivity (XRR) and their porous nanostructure was characterized by grazing-incidence small angle X-ray scattering (GISAXS). XRR results corresponding to undoped and Sb-doped samples indicate a monotonous decrease in film thickness when they are fired at increasing temperatures. At same time, the apparent density of undoped samples exhibits a progressive increase while for Sb-doped films it remains invariant up to 973 K and then increases for T = 1173 K. Anisotropic GISAXS patterns of both films, Sb-doped and undoped, fired above 573 K indicate the presence of elongated pores with their major axis perpendicular to the film surface. For all firing temperatures the nanopores in doped samples are larger than in undoped ones. This suggests that Sb-doping favours the pore growth hindering the film densification. At the highest firing temperature (1173 K) this effect is reversed.

Microstructural, dielectric and ferroelectric properties of calcium-modified lead titanate thin films derived by chemical processes

Ferroelectric Pb1-xCaxTiO3 (x = 0.24) thin films were formed on a Pt/Ti/SiO2/Si substrate by the polymeric precursor method using the dip-coating technique for their deposition. Characterization of the films bq X-ray diffraction showed a perovskite single phase with a tetragonal structure after annealing at 700 degreesC. Atomic force microscopy (AFM) analyses showed that the film had a smooth and crack-free surface with low surface roughness. In addition, the PCT thin film had a granular structure with an 80 nm grain size. The thickness of the films observed by the scanning electron microscopy (SEM) is 550 nm and there is a good adhesion between the film and substrate. For the electrical measurements metal-ferroelectric-metal of the type capacitors were obtained, where the thin films showed good dielectric and ferroelectric properties. The dielectric constant and dissipation factor at 1 kHz and measured at room temperature were found to be 457 and 0.03. respectively. The remanent polarization and coercive field for the: deposited films were P-r = 17 muC/cm(2) and E-c = 75 kV/cm, respectively. Moreover. The 550-nm-thick film showed a current density in the order of 10(-8) A/cm(2) at the applied voltage of 2 V. The high values of the thin film's dielectric properties are attributed to its excellent microstructural quality and the chemical homogeneity obtained by the polymeric precursor method. (C) 2001 Elsevier science Ltd. All rights reserved.

Pechini's solution as precursor for Eu(III)-containing ZnO films

The flat-panel-display's (FPD) market and demand for highly efficient and colored luminescent films have been growing quickly. In this work, thin films were obtained from Pechini's solution by dip-coating. The green films were thermally treated at 873 K in order to get ZnO:Eu 1 at% thin film. A Schott(R) glass plate hydrothermally treated was used as substrate. The films have a mosaic shaped feature that was observed by optical microscopy. That feature is a result of substrate thermal treatment. The film deposition decreases the substrate transmittance in the visible range. When the F-7(0) -->L-5(6) (392nm) Eu3+ transition is excited, it is possible to detect emission from D-5(0) --> F-7(J) (J = 1, 2, 3 and 4) transitions. The D-5(0) --> F-7(2) transition is also observed by using ZnO excitation wavelengths indicating energy transfer from ZnO to Eu3+ ion. (C) 2003 Elsevier B.V. (USA). All rights reserved.

Brillouin scattering in planar waveguides. II. Experiments

Silica-titania planar waveguides of different thicknesses and compositions have been produced by radio-frequency sputtering and dip coating on silica substrates. Waveguides were also produced by silver exchange on a soda-lime silicate glass substrate. Brillouin scattering of the samples has been studied by coupling the exciting laser beam with a prism to different transverse-electric (TE) modes of the waveguides, and collecting the scattered light from the front surface. In multimode waveguides, the spectra depend on the m mode of excitation. For waveguides with a step index profile, two main peaks due to longitudinal phonons are present, apart from the case of the TE0 excitation, where a single peak is observed. The energy separation between the two peaks increases with the mode index. In graded-index waveguides, m-1 peaks of comparable intensities are observed. The spectra are reproduced very well by a model which considers the space distribution of the exciting field in the mode, a simple space dependence of the elasto-optic coefficients, through the value of the refraction index, and neglects the refraction of phonons. A single-fit parameter, i.e., the longitudinal sound velocity, is used to calculate as many spectra as is the number of modes in the waveguide. (C) 2003 American Institute of Physics.

Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature

SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Cracks developed during SrTiO3 thin-film preparation from polymeric precursors

Strontium titanate (SrTiO3) thin films were prepared by dip-coating Si(111) single-crystal substrates in citrate solutions of ethylene glycol, considering several citric acid/ethylene glycol (CA/EG) ratios. Measurements of intrinsic viscosity indicate that increasing the amount of EG increases the precursors' polymeric chains and increases the weight loss. After deposition the substrates were dried on a hotplate (approximate to 150 degrees C); this was followed by heat treatment at temperatures ranging from 500 to 700 degrees C using heating and cooling rates of 1 degrees C min(-1). SEM and optical microscopy investigations of the sintered films obtained from different CA/EG ratios indicate that there is a critical thickness above which the films present cracks. This critical thickness for SrTiO3 films deposited on the Si(111) substrate is about 150 nm, Measurements of crack spacing as a function of film thickness indicate that the origin of cracks cannot be explained by the elastic behavior of the film but rather by the viscoelastic relaxation of the film during pyrolysis and sintering. Copyright (C) 1999 John Wiley & Sons, Ltd.

Microstructural and ferroelectric properties of PbZr1-xTi(x)O(3) thin films prepared by the polymeric precursor method

The polymeric precursor method was employed in the preparation of PZT thin films on Pt(111)Ti/SiO2/Si(100) substrates. X-ray diffraction patterns revealed the polycrystalline nature of the PZT (53:47) thin films, which had a granular structure and a grain size of approximately 70 nm. A 350-nm thick film was obtained by running three cycles of the dip-coating/heating process. Atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (= 2.0 nm). The PZT (53:47) thin films annealed at 700 degreesC showed a well-saturated hysteresis loop. The C-V curves of perovskite thin film displayed normal ferroelectric behavior, while the remanent polarization (2P(r)) and coercive field (E-e) of the film deposited and measured at room temperature were 40 muC/cm(2) and 110 kV/cm, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Erbium-activated HfO2-based waveguides for photonics

Silica-based sol-gel waveguides activated by Er3+ ions are attractive materials for integrated optic devices. 70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-get route. The films were deposited on v-SiO2 and silica-on-silicon substrates, using dip-coating technique. The waveguides show a homogeneous surface morphology, high densification degree and uniform refractive index across the thickness. Emission in the C-telecommunication band was observed at room temperature for ill the samples upon excitation at 980 nm. The shape is found to be almost independent on erbium content, with a FWHM between 44 and 48 nm. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 and 6.7 ms, depending on the erbium concentration. The waveguide deposited on silica-on-silicon substrate supports one single propagation mode at 1.5 mum with a confinement coefficient of 0.85, and a losses of about 0.8 dB/cm at 632.8 nm. (C) 2003 Elsevier B.V. All rights reserved.

Study of electrical, chemical and structural characteristics of superconductor thin film obtained by polymeric precursors method

Superconductor films of the BSCCO system have been grown by dip coating technique with good success. The chemical method allows us to grow high temperature superconductor thin films to get better control of stoichiometry, large areas and is cheaper than other methods. There is a great technological interest in growth oriented superconductor films due anisotropic characteristics of superconductor materials of high critical temperature, specifically the cuprates, as we know that the orientation may increase the electrical transport properties. Based on this, the polymeric precursor method has been used to obtain thin films of the BSCCO system. In this work we have applied that method together with the deposition technique known as dip coating to obtain Bi-based superconductor thin films, specifically, Bi1.6Pb0.4Sr2.0C2.0Cu3.0Ox+8, also known as 2223 phase with a critical temperature around 110 K. The films with multilayers have been grown on crystalline substrates of LaAlO3 and orientated (100) after being heat treated around 790 degrees C - 820 degrees C in lapse time of 1 hour in a controlled atmosphere. XRD measurements have shown the presence of a crystalline phase 2212 with a critical temperature around 85 K with (001) orientation, as well as a small fraction of 2223 phase. SEM has shown a low uniformity and some cracks that maybe related to the applied heat treatment. WDS has also been used to study the films composition. Different heat treatments have been used with the aim to increase the percentage of 2223 phase. Measurements of resistivity confirmed the presence of at least two crystalline phases, 2212 and 2223, with T-c around 85 K and 110 K, respectively.

X-ray reflectivity of zirconia based sol-gel coatings on borosilicate glasses

In this work the technique of X-ray reflectometry was applied to study zirconiumsulfate films deposited by sol-gel dip-coating process on a borosilicate glass surface. The influence of withdrawal speed and temperature of thermal treatment on the film structure are analyzed. The thermal evolution of the density and thickness of the film was compared with these properties measured for a monolithic xerogel by helium picnometry and thermomechanical analysis. The fitting of experimental curves by classical reflectivity model showed the presence of an additional layer at the top surface of the coating. Layer thickness increases with increase of withdrawal speed in agreement with the Landau-Levich model. The apparent and real densities are similar for coatings fired below 400 degrees C, which shows that the films are free of pores. The shrinkage during firing is anisotropic, occurring essentially perpendicular to the coating surface. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

The evaluation of free carrier concentration based on Drude's theory can be performed by the use of optical transmittance in the range 800-2000 nm (near infrared) for Sb-doped SnO2 thin films. In this article, we estimate the free carrier concentration for these films, which are deposited via sol-gel dip-coating. At approximately 900 mn, there is a separation among transmittance curves of doped and undoped samples. The plasma resonance phenomena approach leads to free carrier concentration of about 5 x 1020 cm(-3). The increase in the Sb concentration increases the film conductivity; however, the magnitude of measured resistivity is still very high. The only way to combine such a high free carrier concentration with a rather low conductivity is to have a very low mobility. It becomes possible when the crystallite dimensions are taken into account. We obtain grains with 5 nm of average size by estimating the grain size from X-ray diffraction data, and by using line broadening in the diffraction pattern. The low conductivity is due to very intense scattering at the grain boundary, which is created by the presence of a large amount of nanoscopic crystallites. Such a result is in accordance with X-ray photoemission spectroscopy data that pointed to Sb incorporation proportional to the free electron concentration, evaluated according to Drude's model. (c) 2006 Elsevier Ltd. All rights reserved.

Decay of photo-excited conductivity of Er-doped SnO2 thin films

Er-doped SnO2 thin films, obtained by sol-gel-dip-coating technique, were submitted to excitation with the 4th harmonic of a Nd:YAG laser (266 nm), at low temperature, and a conductivity decay is observed when the illumination is removed. This decay is modeled by considering a thermally activated cross section of an Er-related trapping center. Besides, grain boundary scattering is considered as dominant for electronic mobility. X-ray diffraction data show a characteristic profile of nanoscopic crystallite material (grain average size approximate to 5 nm) in agreement with this model. Temperature dependent and concentration dependent decays are measured and the capture barrier is evaluated from the model, yielding 100 meV for SnO2:0.1% Er and 148 meV for SnO2:4% Er.

BIOSENSORS FOR GLUCOSE NEEDLE-SHAPED FOR IN-VIVO MONITORING

Different procedures for obtaining a needle biosensor for the determination of glucose to be inserted subcutaneously in vivo, have been compared. Platinum wires with a diameter of 75 mum, teflon-coated were inserted in hypodermic needles and fixed with a two-component epoxy resin. Using a dip-coating procedure, several layers were deposited on electrodes. The first coating was cellulose acetate, the second was immobilized glucose oxidase (GOD) mixed with bovine serum albumin (BSA) and glutaraldheyde, the third coating was a polyurethane coating obtained with commercially available products. A large number of electrodes have been tried and statistically evaluated but they seem to be affected by poor reproducibility evidenced by a large spreading in successive calibration curves. Then, the polyurethane coating has been replaced by a thin polycarbonate membrane salinized and fixed on the tip of the needle. Reproducible results were achieved and first results of in vivo measurements on rabbits are reported.

Sol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m application

70SiO(2)-30HfO(2) planar waveguides, doped with Er(3+) concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the (4)I(13/2)-->(4)I(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The (4)I(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.

Infrared-to-visible CW frequency upconversion in erbium activated silica-hafnia waveguides prepared by sol-gel route

70SiO(2)-30HfO(2) mol% planar waveguides, doped with Er3+ with concentrations ranging from 0.3 to 2 mol% were prepared by sol-gel route, using dip-coating deposition on vitreous-SiO2 substrates. Infrared-to-visible upconversion emission, upon excitation at 980 nm, has been observed for all the samples. The upconversion results in green, red and blue emissions. The investigation of the upconversion dynamic as a function of the Er3+ concentration and excitation power, show that processes such as excited state absorption and energy transfer upconversion are effective. (C) 2003 Elsevier B.V. All rights reserved.