Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature


Autoria(s): Zanetti, S. M.; Araujo, E. B.; Leite, E. R.; Longo, Elson; Varela, José Arana
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/07/1999

Resumo

SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Formato

33-38

Identificador

http://dx.doi.org/10.1016/S0167-577X(99)00045-2

Materials Letters. Amsterdam: Elsevier B.V., v. 40, n. 1, p. 33-38, 1999.

0167-577X

http://hdl.handle.net/11449/33383

10.1016/S0167-577X(99)00045-2

WOS:000081494600008

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Materials Letters

Direitos

closedAccess

Palavras-Chave #ferroelectric #SrBi2Ta2O9 #bismuth layer #thin films #Pt/Ti/SiO2/Si substrates #perovskite phase
Tipo

info:eu-repo/semantics/article