Decay of photo-excited conductivity of Er-doped SnO2 thin films
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/04/2007
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Resumo |
Er-doped SnO2 thin films, obtained by sol-gel-dip-coating technique, were submitted to excitation with the 4th harmonic of a Nd:YAG laser (266 nm), at low temperature, and a conductivity decay is observed when the illumination is removed. This decay is modeled by considering a thermally activated cross section of an Er-related trapping center. Besides, grain boundary scattering is considered as dominant for electronic mobility. X-ray diffraction data show a characteristic profile of nanoscopic crystallite material (grain average size approximate to 5 nm) in agreement with this model. Temperature dependent and concentration dependent decays are measured and the capture barrier is evaluated from the model, yielding 100 meV for SnO2:0.1% Er and 148 meV for SnO2:4% Er. |
Formato |
2216-2221 |
Identificador |
http://dx.doi.org/10.1007/s10853-006-1320-0 Journal of Materials Science. New York: Springer, v. 42, n. 7, p. 2216-2221, 2007. 0022-2461 http://hdl.handle.net/11449/36315 10.1007/s10853-006-1320-0 WOS:000245125700002 |
Idioma(s) |
eng |
Publicador |
Springer |
Relação |
Journal of Materials Science |
Direitos |
closedAccess |
Tipo |
info:eu-repo/semantics/article |