140 resultados para electric capacitance
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We used a Stark-Optoacoustic cell and hybrid waveguide resonators to perform an Infrared and Far Infrared Stark Spectroscopy study on some transitions of (CD3OH)-C-13. Different behaviours of the transitions in the presence of a d.c. electric field were observed. The Stark splittings of six FIR laser lines ranging from 34 to 136 MHz/kVcm(-1) were determined. The analysis of the behaviour of the IR and FIR transitions in the presence of the external electric fields gives important and exclusive information on the levels involved in the transitions.
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Field-dependent conductivity at low electric fields was observed from low to room temperature in pressed pellets of doped poly(3-methylthiophene). The room temperature data showed good agreement with Bardeen's theory of charge-density wave depinning and the values of the parameters obtained are consistent with a strong electron-phonon interaction as expected for quasi-one dimensional systems. (C) 2003 Elsevier B.V. Ltd. All rights reserved.
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High non-linear J x E electrical characteristic (alpha=41) were obtained in the Nb2O5 and Cr2O3 doped CoO highly densified SnO2 ceramics. X-ray diffraction analysis showed that these ceramics are apparently single phase. Electrical properties and microstructure are highly dependent on the Cr2O3 concentration and on the sintering temperature. Excess of Cr2O3 leads to porous ceramics destroying the material's electrical characteristics probably due to precipitation of second phase of CoCr2O4 Dopant segregation and/or solid solution formation at the grain boundaries can be responsible for the formation of the electrical barriers which originate the varistor behaviour. (C) 1998 Elsevier B.V. Limited and Techna S.r.l. All rights reserved.
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Drying kinetics of tomato was studied by using heat pump dryer (HPD) and electric resistance dryers with parallel and crossed airflow. The performance of both systems was evaluated and compared and the influence of temperature, air velocity, and tomato type on the drying kinetics was analyzed. The use of HPD showed to be adequate in the drying process of tomatoes, mainly in relation to the conversion rate of electric energy into thermal energy. The heat pump effective coefficient of performance (COPHT,EF) was between 2.56 and 2.68, with an energy economy of about 40% when compared to the drying system with electric resistance. The Page model could be used to predict drying time of tomato and statistical analysis showed that the model parameters were mainly affected by drying temperature.
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Barium strontium titanate (Ba0.65Sr0.35TiO3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 degrees C show food electric properties. The ferroelectric nature of the BST35 thin film was indicated by buttertly- shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100kHz. The dissipation factor was 0.01 at 100kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64 Mb ( 1-5 mu C/cm(2) and 265 Mb (2-11 mu C/cm(2)) DRAMs. (C) 2007 Elsevier Ltd. All rights reserved.
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We revisit the long standing problem of analyzing an inertial electric charge from the point of view of uniformly accelerated observers in the context of semi-classical gravity. We Choose a suitable set of accelerated observers with respect to which there is no photon emission coming from the inertial charge. We discuss this result against previous claims.
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We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.
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Polycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different temperatures by the polymeric precursor method on platinum-coated silicon substrate. Crystalline films with uniform composition and thickness were prepared by spin-coating and the post-deposition heat treatment was carried out at different temperatures. The film showed good structural, dielectric, and insulating properties, Scanning electron microscopy (SEM) micrographs showed no occurrence of interdiffusion between the bottom electrode (platinum) and the film during post-annealing, indicating a stable interface between the SrTiO3 and the bottom electrode. The dielectric constant and dissipation factor at a frequency of 100 kHz were 250 and 0.01, respectively, for a 360 nm thick film annealed at 600 degreesC. The capacitance versus applied voltage characteristics showed that the capacitance was almost independent of the applied voltage. The I-V characteristics were ohmic in low fields and a Schottky emission and/or Poole-Frenkel emission were postulated in high fields. Room temperature leakage current density was found to be in the order of 10(-7) A/cm(2) for a 360 nm thick film in an applied electric field of about 100 kV/cm. The charge storage density of 36 fC/mum(2) was obtained in an applied electric field of about 100 kV/cm. (C) 2001 Published by Elsevier B.V. Ltd. All rights reserved.
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BiFeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 degrees C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 degrees C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations. (c) 2007 American Institute of Physics.
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The electric properties of (Sn, Ti)O-2 doped with 1.00 mol% CoO, 0.05 mol% Nb2O5 and xmol% La2O3 (0.25 less than or equal to x less than or equal to 1.00) have been studied. Sn0.25Ti0.75Co0.01Nb0.005 doped with 0.50 mol% La2O3 has a nonlinearity coefficient of 6. An increase in the concentration of La2O3 raised its resistivity, thereby altering the electric properties of the material. A thermal treatment in oxygen atmosphere increased the nonlinearity coefficient to a value of 9. (C) 2003 Elsevier B.V. All rights reserved.
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Electrical properties of natural alexandrite (BeAl2O4:Cr3+) are investigated by the thermally stimulated depolarization current (TSDC) technique. Samples are submitted to consecutive annealing processes and TSDC is carried out after each annealing, yielding bands with different parameters. These bands are fitted by a continuous distribution of relaxation parameters: activation energy and pre-exponential factor of the Arrhenius equation. It has been observed that annealing influences the dipole relaxation behavior, since it promotes a modification of Fe3+ and C3+ impurity distributions on sites of distinct symmetry: Al-1 and Al-2. In order to have a reference for comparison, TSDC is also carried out on a synthetic alexandrite sample, where the only impurity present is Cr3+ ion.
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Pb1-xCaxTiO3 (0.10less than or equal toxless than or equal to0.40) thin films on Pt/Ti/SiO2/Si(100) substrates were prepared by the soft solution process and their characteristics were investigated as a function of the calcium content (x). The structural modifications in the films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate a decrease in lattice tetragonality with the increasing content of calcium in these films. Raman spectra exhibited characteristic features of pure PbTiO3 thin films. Variations in the phonon mode wave numbers, especially those of lower wave numbers, of Pb1-xCaxTiO3 thin films as a function of the composition corroborate the decrease in tetragonality caused by the calcium doping. As the Ca content (x) increases from 0.10 to 0.40, the dielectric constant at room temperature abnormally increased at 1 kHz from 148 to 430. Also calcium substitution decreased the remanent polarization and coercive field from 28.0 to 5.3 muC/cm(2) and 124 to 58 kV/cm, respectively. These properties can be explained in terms of variations of phase transition (ferroelectric-paraelectric), resulting from the substitution the lead site of PbTiO(3)for the nonvolatile calcium. (C) 2002 American Institute of Physics.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)