Thermal, structural and optical properties of new tungsten lead-pyrophosphate glasses

Crystalline lead-pyrophosphate precursor was prepared in aqueous solution from lead nitrate and phosphoric acid and characterized by X-ray diffraction, thermogravimetry and Raman scattering. This crystalline lead-phosphate was then used to prepare glass samples in the binary system Pb(2)P(2)O(7)-WO(3). Dependence of WO(3) content on thermal, structural and optical properties were investigated by thermal analysis (DSC), Raman spectroscopy, UV-visible and near-infrared absorption and M-Line technique to access refractive index values. Incorporation of WO(3) in the lead-pyrophosphate matrix enhances the glass transition temperature and thermal stability against devitrification, favors formation of P-O-W bonds and WO(6) clusters. In addition, optical properties are strongly modified with a redshift of the optical bandgap with WO(3) incorporation as well as an increase of the refractive index from 1.89 to 2.05 in the visible. (C) 2011 Elsevier B.V. All rights reserved.

1.5 mu m and visible up-conversion emissions in Er3+/Yb3+ co-doped tellurite glasses and optical fibers for photonic applications

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Nanocrystalline anatase thin films prepared from redispersible sol-gel powders

Transparent thin films of nanocrystalline anatase were obtained by dip-coating process using an ethanolic suspension of redispersed nanoparticles. This suspension was prepared by sol-gel route and their redispersability achieved by surface grafting of para-toluene-sulfonic acid and acetylacetone. The effects of the acetylacetone content on the powder redispersibility and on the structural evolution of films were determined by small angle X-ray scattering, X-ray reflectometry and X-ray diffraction for different firing temperatures. The results demonstrated that the porous structure of the studied films consist of agglomerates of primary particles with two levels of porosity. The control of the amount of capping ligand allows for a fine-tuning of the average pore size of the dried films. Upon increasing the firing temperature up to 500 degrees C, progressive increase in apparent density, average pore size of films and average crystallite size of powders were observed. (c) 2005 Elsevier Ltd. All rights reserved.

SrBi2Nb2O9 thin films crystallized using a low power microwave oven

SrBi2Nb2O9 thin films were produced by the polymeric precursor method using an aqueous solution. The crystallization of the films was carried out using a domestic microwave oven by means of a SiC susceptor in order to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are well-adhered, homogeneous and with good specularity, even when treated at 600 degreesC for 10 min. The microstructure and the structure of the films can be tuned by adjusting the crystallization conditions. Depending on the direction of the heat flux it is possible to obtain preferential oriented or polycrystalline films in the microwave oven for 10 min. The microstructure presented a polycrystalline nature with spheroid small mean grain size when the susceptor is placed above the substrate. When the susceptor is placed below the substrate, the films presented platelet grains with mean grain size around 250 nm and a 001 orientation. For comparison, films were also prepared by the conventional method at 700 degreesC for 2 h. (C) 2003 Elsevier Ltd. All rights reserved.

Soft chemical deposition of BiFeO3 multiferroic thin films

BiFeO3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)/Ti/SiO2/Si substrates after annealing at 500 degrees C for 2 h. The film grown in the (100) direction presented a remanent polarization P-r of 31 mu C/cm(2) at room temperature. Electrical measurements using both quasistatic hysteresis and pulsed polarization confirm the existence of ferroelectricity with a switched polarization of 60-70 mu C/cm(2), Delta P=(P-*-P). Low leakage conduction and an out-of-plane piezoelectric (d(3)) coefficient of 40 pm/V were obtained by the improvement of preparation technology.

Ultraviolet excitation of photoconductivity in thin films of sol-gel SnO2

Tin dioxide (SnO2) thin film photoconductivity spectra were measured for a large temperature range using a deuterium source, the intensity of photocurrent spectra in the range 200-400 nm is temperature dependent, and the photocurrent increases in the ultraviolet even for illumination with photon energies much higher than the bandgap transition. This behavior is related to recombination of photogenerated electron-hole pairs with oxygen adsorbed at grain boundaries, which is consistent with nanoscopic crystallite size of sol-gel deposited films. (c) 2005 Elsevier Ltd. All rights reserved.

Photoluminescence at room temperature in disordered Ba(0.50)Sr(0.)5(0)(Ti0.80Sn0.20)O-3 thin films

Photoluminescence (PL) properties at room temperature of disordered Ba0.50Sr0.50(Ti0.80Sn0.20)O-3 (BST:Sn) thin films were obtained by the polymeric precursor method. X-ray diffraction data and corresponding PL properties have been measured using the 488 nm line of an argon ion laser. The PL spectra of the film annealed at 350 degrees C for 21 h are stronger than those of the film annealed at 350 degrees C for 28 h, indicating a disorganized structure. The energy band gaps of the crystalline and amorphous BST:Sn thin films were 3.35 and 2.25 eV, respectively. The doped BST thin films also tend to a cubic structure, resulting from TiO6 deformations. (c) 2006 American Institute of Physics.

Thickness dependence of leakage current in BaBi2Ta2O9 thin films

BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 10(12)-10(14) Omega cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500-700 degrees C. The current-voltage (I-V) characteristics as a function of thickness for films annealed at 700 degrees C for 1 h, indicated bulk limited conduction and the log(I) vs V-1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance-voltage measurements on films in a metal-insulator-semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of similar to 5 nm was measured and calculated. (C) 1999 American Institute of Physics. [S0003-6951(99)00830-X].

Layer-by-layer hybrid films of polyaniline and vanadium oxide

Supramolecular structures of polyaniline (PANI) and vanadium oxide (V2O5) have been assembled via the electrostatic layer-by-layer (LBL) technique. The films were characterized by vibrational analyses which indicated that the interactions between the two components lead to different properties in the films when compared to sol-gel films. of the neat compounds. In particular, using surface enhanced Raman scattering we were able to probe LBL film properties that depend on which material comprises the topmost layer.

Spectroscopic characterization of BPSCCO thin films grown by dip-coating technique

This work describes the growth of Bi2-xPbxSr2Can-1CunO2n+4 thin films by the dip-coating technique for 0.4 less than or equal to x less than or equal to 1. X-ray and Raman spectroscopic techniques were carried out in order to characterize the films at room temperature. From X-ray data it is observed that the films are multi-phased presenting phases 2201, 2212 and 2223 along with the undesirable Ca2PbO4 phase. It is also observed that phase 2212 becomes dominant when Pb content increases. The Raman modes observed agree with the overall features expected for these compounds. (C) 2003 Elsevier B.V. B.V. All rights reserved.

The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors

Pure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC for 2 h. Crystallinity and morphological evaluation were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystalline layer route present a dense microstructure with spherical grains. Films obtained using the intermediate-amorphous layer, present elongated grains around 250 nm in size. The dielectric and ferroelectric properties of the lanthanum-doped Bi4Ti3O12 films are strongly affected by the crystallization route. The hysteresis loops are fully saturated with a remnant polarization and drive voltage of the films, heat-treated by the intermediate-crystalline (P-r = 20.2 muC/cm(2) and V = 1.35 V) and for the film heat-treated by amorphous route (P-r = 22.4 muC/cm(2) and V = 2.99 V). (C) 2004 Elsevier B.V. All rights reserved.

High dielectric constant of SrTiO3 thin films prepared by chemical process

SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto Pt/Ti/SiO2/Si(100) substrates. The spin-coated films heat treated at 700 degrees C were crack-free, dense, and homogeneous. Microstructural and morphological evaluations were followed by grazing incident X-ray, scanning electron microscopy and atomic force microscopy. Dielectric studies indicated a dielectric constant of about 475, which is higher than that of ceramic SrTiO3, and a factor dissipation of about 0.050 at 100 kHz. SrTiO3 thin films were found to have paraelectric properties with C-V characteristics. (C) 2000 Kluwer Academic Publishers.

SrBi2Nb2O9 thin films deposited by dip coating using aqueous solution

A new approach for SrBi2Nb2O9 (SBN) thin films synthesis using aqueous solution was successfully experienced. The deposition solution was prepared from Sr-Bi-Nb mixed-citrate solution, requiring no special atmosphere and using common reagents. Films were deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates and hear treated at temperatures ranging from 300 to 700 degrees C. The process of formation and crystallization of SrBi2Nb2O9 thin films, prepared by the aqueous solution method have been studied with particular emphasis on the microstructure of crystallized films. Crystalline phases formation were followed by grazing incident X-ray diffraction (GIXRD), microstructure characterization was evaluated by scanning electron microscopy (SEM) and surface roughness were observed using atomic for ce microscopy (AFM). To reach the desired thickness, substrates were dipped in the deposition solution twice, forming double-layered films. The thickness of each layer ranged from 80 to 100 nm. (C) 1999 Elsevier B.V. Limited. All rights reserved.

Effect of the heat flux direction on electrical properties of SrBi2Nb2O9 thin films crystallized using a microwave oven

Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO2/Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to absorb the microwave energy and transfers the heat to the film. Influence of the susceptor position to the sample crystallization was verified, the susceptor was, placed or below the substrate or above the film. The SBN perovskite phase was observed after a thermal treatment at 700 degreesC for 10 min when the susceptor was placed below the substrate and for 30 min when the susceptor was placed above the film. Electrical measurements revealed that the film crystallized at 700 degreesC for 10 min, with the susceptor placed below the film, presented dielectric constant, dielectric loss, remanent polarization and coercive field of, 67, 0.011, 4.2 muC/cm(2) and 27.5 kV/cm, respectively. When the films were crystallized at 700 degreesC for 30 min, with the susceptor placed above the film, the dielectric constant was 115 and the dissipation factor was around of 0.033, remanent polarization and coercive field were 10.8 muC/cm(2) and 170 kV/cm, respectively. (C) 2003 Elsevier B.V. All rights reserved.

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.