Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.

Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 thin films grown by the soft chemical method

Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14 mu C/cm(2) and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5 x 10(-7) A/cm(2). This work clearly reveals the highly promising potential of BST:Sn for application in memory devices. (c) 2006 Elsevier B.V. All rights reserved.

Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramics

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Study of the dielectric and ferroelectric properties of chemically processed BaxSr1-xTiO3 thin films

Polycrystalline BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films with a perovskite structure were prepared by the polymeric precursor method on a platinum-coated silicon substrate. High-quality thin films with uniform composition and thickness were successfully produced by dip-coating and spin-coating techniques. The resulting thin films prepared by dip and spin-coating showed a well-developed dense polycrystalline structure with uniform grain size distribution. The metal-BST-metal structure of the thin films displays good dielectric and ferroelectric properties. The ferroelectric nature to BaxSr1-xTiO3 (x = 0.8) thin film, indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed 2P(r) = 5.0 muC/cm(2) and E-c = 20 kV/cm. The capacitance-frequency curve reveals that the dielectric constant may reach a value of up to 794 at 1 kHz. on the other hand, the BaxSr1-xTiO3 (x = 0.4) thin films had paraelectric nature and dielectric constant and the dissipation factor at a frequency of 100 kHz were 680 and 0.01, respectively, for film annealed at 700 degreesC. In addition, an examination of the film's I-V curve at room temperature revealed the presence of two conduction regions in the BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films, showing ohmic-like behavior at low voltage and a Schottky-emission or Poole-Frenkel mechanism at high voltage. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Microstructural, dielectric and ferroelectric properties of calcium-modified lead titanate thin films derived by chemical processes

Ferroelectric Pb1-xCaxTiO3 (x = 0.24) thin films were formed on a Pt/Ti/SiO2/Si substrate by the polymeric precursor method using the dip-coating technique for their deposition. Characterization of the films bq X-ray diffraction showed a perovskite single phase with a tetragonal structure after annealing at 700 degreesC. Atomic force microscopy (AFM) analyses showed that the film had a smooth and crack-free surface with low surface roughness. In addition, the PCT thin film had a granular structure with an 80 nm grain size. The thickness of the films observed by the scanning electron microscopy (SEM) is 550 nm and there is a good adhesion between the film and substrate. For the electrical measurements metal-ferroelectric-metal of the type capacitors were obtained, where the thin films showed good dielectric and ferroelectric properties. The dielectric constant and dissipation factor at 1 kHz and measured at room temperature were found to be 457 and 0.03. respectively. The remanent polarization and coercive field for the: deposited films were P-r = 17 muC/cm(2) and E-c = 75 kV/cm, respectively. Moreover. The 550-nm-thick film showed a current density in the order of 10(-8) A/cm(2) at the applied voltage of 2 V. The high values of the thin film's dielectric properties are attributed to its excellent microstructural quality and the chemical homogeneity obtained by the polymeric precursor method. (C) 2001 Elsevier science Ltd. All rights reserved.

Phase-locking of superimposed diffractive gratings in photoresists

The superposition of optical interference patterns in a photoresist film can produce a rich variety of diffractive structures. In particular, a periodic non-sinusoidal surface relief profile can be synthesized by adding the Fourier components (sinusoidal gratings) of the desired profile. In order to control the shape of the grooves it is very important an accurate adjustment of the relative spatial shift between the recorded sinusoidal components. We describe the implementation of an opto-electronic feedback loop to select and lock such spatial shift at any desired position, thus allowing the synthesis of structures varying from symmetrical to asymmetrical relief profiles in a continuous range. To demonstrate the feasibility of the technique, the Fourier synthesis of two spatial harmonics is accomplished. The superposed sinusoidal gratings were recorded in positive photoresist films using a holographic setup operating at the line lambda = 457.9 run of an argon-ion laser. A detailed description of the procedure as well as the resulting profiles recorded in the photoresist is presented. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Generalization of the delta-differential autotransformer for 12 and 18-pulse converters

This work proposes a methodology to generalize the A-connections for 12 and 18-pulse autotransformers. A single mathematical expression, obtained through simple trigonometric operations, represents all the connections. The proposed methodology allows choosing any ratio between the input and the output voltages. The converters can operate either as step-up or as step-down voltage. To simplify the design of the windings, graphics are generated to calculate the turn-ratio and the polarity of each secondary winding, with respect to the primary winding. A design example, followed by digital simulations, and experimental results illustrate the presented steps. The results also show that high power factor is an inherent characteristic of multi-pulse converters, without any active or passive power factor pre-regulators needs.

Differential pulse polarographic determination of clotrimazole after derivatization with Procion Red HE-3B

Clotrimazole was shown to react at room temperature in Britton Robinson buffer pH 2 with the reactive dye Procion Red HE-3B. The product exhibited a differential pulse polarographic peak at -0.38 V, which was well separated from the peaks of the reactive dye at -0.08, -0.80 and -0.95 V, and this allowed the indirect determination of clotrimazole in the presence of excess of the reactive dye. The method has been applied satisfactorily to the determination of clotrimazole in pharmaceutical formulations, calibration graphs are rectilinear up to at least 40 mug ml(-1). The detection limit was calculated to be 2.6 mug ml(-1) (3 sigma). (C) 2002 Elsevier B.V. B.V. All rights reserved.

Dielectric loss and phase transition of sodium potassium niobate ceramic investigated by impedance spectroscopy

The dielectric permittivity of Na0.80K0.20NbO3 ceramic was investigated by impedance spectroscopy. The dielectric characterization was performed from room temperature to 800 degreesC, in the frequency range 5 Hz-13 MHz. The bulk permittivity was derived by the variation of the imaginary part of the impedance as a function of reciprocal angular frequency. The permittivity values as a function of temperature showed two maxima. The first maximum is very similar at 200degreesC and the second one positioned at around 400degreesC, which was associated to Curie's temperature. The evolution of the complex permittivity as a function of frequency and temperature was investigated. At low frequency dispersion was investigated in terms of dielectric loss. The Na0.80K0.20NbO3 showed a dissipation factor between 5 and 40 over a frequency range from 1 to 10(2) kHz. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Electrochemical study of hydroxychloroquine and its determination in plaquenil by differential pulse voltammetry

Hydroxychloroquine (HCQ) is a halogenated aminoquinoline that presents wide biological activity, often being used as an antimalarial drug. The electrochemical reduction of HCQ was investigated by cyclic voltammetry and chronoamperometry using glassy carbon electrodes. By cyclic voltammetry, in acid medium, only the cathodic peak was observed. The electrochemical behavior of this peak is dependent on pH and the electrodic process occurs through an ErCi mechanism. The electron number (le) consumed in the reduction of HCQ was obtained by chronoamperometry. A method for the electrochemical determination of HCQ in pharmaceutical tablets was developed using differential pulse voltammetry. The detection limit reached was 11.2 mug ml(-1) of HCQ with a relative standard deviation of 0.46%. A spectrophotometric study of HCQ has been also carried out utilizing a band at 343 nm. The obtained detection limit and the relative standard deviation were 0.1 mug ml(-1) and 0.36%, respectively. The electrochemical methods are sufficiently accurate and precise to be applied for HCQ determination, in laboratorial routine, which can be used to determine the drug at low level. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Admittance and dielectric spectroscopy of polycrystalline semiconductors

This text discusses about advantageous, powerful and limitations of admittance and dielectric spectroscopy in the characterization of polycrystalline semiconductors. In the context of polycrystalline semiconductors or dielectric materials, the admittance or dielectric frequency response analyses are shown to be sometimes more useful than impedance spectra analysis, mainly because information on the capacitances or deep trap states are possible to be monitored from admittance or dielectric spectra as a function of dopant concentration or annealing effects. The majority of examples of the application of admittance or dielectric analysis approach were here based on SnO2- and ZnO-based polycrystalline semiconductors devices presenting nonohmic properties. Examples of how to perform the characterization of Schottky barrier in such devices are clearly depicted. The approach is based on findings of the true Mott-Schottky pattern of the barrier by extracting the grain boundary capacitance value from complex capacitance diagram analysis. The equivalent circuit of such kind of devices is mainly consistent with the existence of three parallel elements: the high-frequency limit related to grain boundary capacitances, the complex incremental capacitance at intermediate frequency related to the deep trap relaxation and finally at low frequency region the manifestation of the conductance term representing the dc conductance of the multi-junction device. (c) 2007 Elsevier Ltd. All rights reserved.

Dielectric spectroscopy on Bi3Zn2Sb3O14 ceramic: an approach based on the complex impedance

The dielectric properties and loss of Bi1.5ZnSb1.5O7 a poor-semiconducting ceramic were investigated by impedance spectroscopy, in the frequency range from 5 Hz to 13 MHz. Electric measurements were performed from 100 to 700 degreesC. Pyrochlore type phase was synthesized by the polymeric precursor method. Dense ceramic with 97% of the theoretical density was prepared by sintering via constant heating rate. The dielectric permittivity dependence as a function of frequency and temperature showed a strong dispersion at frequency lower than 10 kHz. The losses (tan delta) exhibit slight dependence with the frequency at low temperatures presenting a strong increase at temperatures higher than 400 degreesC. A decrease of the loss magnitude occurs with increasing frequency. Relaxation times were extracted using the dielectric functions Z(omega) and M(omega). The plots of the relaxation times tau(Z'), and tau(M) as a function of temperature follow the Arrhenius law, where a single slope is observed with activation energy values equal to 1.38 and 1.37 eV, respectively. (C) 2003 Elsevier Ltd. All rights reserved.

Size effect on structure and dielectric properties of Nb-doped barium titanate

It is known that the dielectric properties of BaTiO3 (BT) are strongly dependent on its grain size. Coarse-grained ceramics of pure BT showed lower dielectric constant at room temperature then fine grained. Many authors considered that when the grain size is lower than 700 nm, the lattice of BT changes from tetragonal to pseudocubic, and the dielectric constant value is very low. In the doped BT this effect is more complex, because it is necessary to consider also the influence of dopants. The grain size effect on the structure and dielectric properties of niobium-doped barium titanate was investigated. Niobium-doped barium titanate was prepared from powders obtained by doping of commercial barium titanate and from organometallic complex using citrates as precursors (Pechini procedure). The crystal and microstructure of sintered niobium-doped barium titanate were determined. Dielectric constant and dissipation factor were measured. The observation confirmed that the structure and properties are strongly dependent on grain size. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Thermal conductivity features of ZnO-based varistors using the laser-pulse method

The thermal conductivity of several commercial ZnO-based varistor systems was determined based on the laser-pulse method, a technique that proved extremely useful and easy to apply. Using this technique, the thermal conductivity was found to be dependent on the microstructural features of the devices, involving the mean grain size and phase composition. Among the phases existing in commercial ZnO-based varistors, ZniSb2O12 and Bi2O3 were found to contribute strongly to the thermal conductivity of the devices. (C) 2003 Elsevier B.V. All rights reserved.