105 resultados para boron nitride (BN) nanodisks


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We demonstrated for the first time by ab initio density functional calculation and molecular dynamics simulation that C0.5(BN)0.5 armchair single-walled nanotubes (NT) are gapless semiconductors and can be spontaneously formed via the hybrid connection of graphene/BN Nanoribbons (GNR/BNNR) at room temperature. The direct synthesis of armchair C0.5(BN)0.5 via the hybrid connection of GNR/BNNR is predicted to be both thermodynamically and dynamically stable. Such novel armchair C0.5(BN)0.5 NTs possess enhanced conductance as that observed in GNRs. Additionally, the zigzag C0.5(BN)0.5 SWNTs are narrow band gap semiconductors, which may have potential application for light emission. In light of recent experimental progress and the enhanced degree of control in the synthesis of GNRs and BNNR, our results highlight an interesting avenue for synthesizing a novel specific type of C0.5(BN)0.5 nanotube (gapless or narrow direct gap semiconductor), with potentially important applications in BNC-based nanodevices.

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Graphitic carbon nitride (g-C3N4) has been synthesized via a two-step pyrolysis of melamine (C3H6N6) at 800°C for 2 h under vacuum conditions. X-ray diffraction (XRD) patterns strongly indicate that the synthesized sample is g-C3N4. Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) morphologies indicate that the product is mainly composed of graphitic carbon nitride. The stoichiometric ratio of C:N is determined to be 0.72 by elemental analysis (EA). Chemical bonding of the sample has been investigated by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). Electron energy loss spectroscopy (EELS) verifies the bonding state between carbon and nitrogen atoms. Optical properties of the g-C3N4 were investigated by PL (photoluminescence) measurements and UV–Vis (ultraviolet–visible) absorption spectra. We suppose its luminescent properties may have potential application as component of optical nanoscale devices. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were also performed.

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An array of pine-shaped nanostructures of aluminum nitride (AlN) was synthesized through direct reaction between Al vapor and nitrogen gas in direct current (DC) arc discharge plasma without any catalyst or template. The as-prepared nanostructure consists of many pine-needle-shaped leaves with conical shape tips. The structure, morphology, and optical property of the nanostructure have been characterized by X-ray powder diffraction, energy-dispersive X-ray spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence. A possible growth mechanism of the pine-shaped nanostructure was discussed. Two factors were found to be essential for branched nanostructure growth, i.e., the reaction time and N2 pressure. The photoluminescence spectrum of the nanostructure of AlN revealed an intense emission band, suggesting that there may be potential applications in electronic and optoelectronic nanodevices.

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Cubic tantalum nitride (TaN) nanocrystallites were synthesized by the direct-current (dc) arc discharge method in N 2 gas. The influence of N 2 pressure on the as-synthesized cubic TaN samples was studied. The growth mechanism of cubic TaN was discussed. XRD, TEM and XPS were used to characterize the product. The results show that the influence of N 2 pressure plays a key role in the preparation of pure cubic TaN nanocrystallites. The size of cubic TaN nanocrystallites obtained is 5-10 nm.

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A new solid-state reaction to form metal nitrides has been investigated. It was confirmed that single phase chromium nitride is formed by a solid-state diffusion reaction between iron nitride and chromium chloride powders at temperatures between 570-700°C. The discovered reaction can be applied to form chromium nitride coatings on tool steels for metal forming applications.

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Poly(triazine imide) with intercalation of lithium and chloride ions (PTI/Li+Cl−) was synthesized by temperature-induced condensation of dicyandiamide in a eutectic mixture of lithium chloride and potassium chloride as solvent. By using this ionothermal approach the well-known problem of insufficient crystallinity of carbon nitride (CN) condensation products could be overcome. The structural characterization of PTI/Li+Cl− resulted from a complementary approach using spectroscopic methods as well as different diffraction techniques. Due to the high crystallinity of PTI/Li+Cl− a structure solution from both powder X-ray and electron diffraction patterns using direct methods was possible; this yielded a triazine-based structure model, in contrast to the proposed fully condensed heptazine-based structure that has been reported recently. Further information from solid-state NMR and FTIR spectroscopy as well as high-resolution TEM investigations was used for Rietveld refinement with a goodness-of-fit (χ2) of 5.035 and wRp=0.05937. PTI/Li+Cl− (P63cm (no. 185); a=846.82(10), c=675.02(9) pm) is a 2D network composed of essentially planar layers made up from imide-bridged triazine units. Voids in these layers are stacked upon each other forming channels running parallel to [001], filled with Li+ and Cl− ions. The presence of salt ions in the nanocrystallites as well as the existence of sp2-hybridized carbon and nitrogen atoms typical of graphitic structures was confirmed by electron energy-loss spectroscopy (EELS) measurements. Solid-state NMR spectroscopy investigations using 15N-labeled PTI/Li+Cl− proved the absence of heptazine building blocks and NH2 groups and corroborated the highly condensed, triazine-based structure model.

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The intrinsic stress, film density and nitrogen content of carbon nitride (CNx) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CNx including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (~ 30%) was deposited at room temperature with 1.0 mTorr N2 pressure and using an intermediate bias of - 400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 °C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon-nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (~ 50 GPa) to softer and highly ductile CN x which contained tangled graphite-like sheets. Through-film current-voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films. © 2014 Elsevier B.V.

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Analysis of the induced stress on undoped and boron-doped diamond (BDD) thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the OPEN ACCESS current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

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This paper investigates the manufacturing of aluminium-boron carbide composites using the stir casting method. Mechanical and physical properties tests to obtain hardness, ultimate tensile strength (UTS) and density are performed after solidification of specimens. The results show that hardness and tensile strength of aluminium based composite are higher than monolithic metal. Increasing the volume fraction of B4C, enhances the tensile strength and hardness of the composite; however over-loading of B4C caused particle agglomeration, rejection from molten metal and migration to slag. This phenomenon decreases the tensile strength and hardness of the aluminium based composite samples cast at 800 °C. For Al-15 vol% B4C samples, the ultimate tensile strength and Vickers hardness of the samples that were cast at 1000 °C, are the highest among all composites. To predict the mechanical properties of aluminium matrix composites, two key prediction modelling methods including Neural Network learned by Levenberg-Marquardt Algorithm (NN-LMA) and Thin Plate Spline (TPS) models are constructed based on experimental data. Although the results revealed that both mathematical models of mechanical properties of Al-B4C are reliable with a high level of accuracy, the TPS models predict the hardness and tensile strength values with less error compared to NN-LMA models.