Synthesis of cubic tantalum nitride nanocrystallites

Cubic tantalum nitride (TaN) nanocrystallites were synthesized by the direct-current (dc) arc discharge method in N 2 gas. The influence of N 2 pressure on the as-synthesized cubic TaN samples was studied. The growth mechanism of cubic TaN was discussed. XRD, TEM and XPS were used to characterize the product. The results show that the influence of N 2 pressure plays a key role in the preparation of pure cubic TaN nanocrystallites. The size of cubic TaN nanocrystallites obtained is 5-10 nm.