14 resultados para I-beam

em Consorci de Serveis Universitaris de Catalunya (CSUC), Spain


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Projecte de recerca elaborat a partir d’una estada a la State University of New York a Stony Brook, EEUU, a l’agost i setembre del 2008. S’ha demostrat com està relacionada la diferència en el rendiment de lasejat de dos mostres altament dopades amb iterbi (20 at. %) de capes epitaxials de KY(WO4)2 (KYW) dopat amb Yb crescut sobre un substrat de KYW i de KLu(WO4)2 (KLuW) dopat amb Yb crescut sobre un substrat de KLuW, respectivament, amb la presència de estrès estructural en les capes epitaxials, investigat per Topografia de Feix Blanc de Raig X de Sincrotró. A partir dels resultats obtinguts, queda clar que les mostres que mostren una quantitat d'estrés estructural més gran, les epitaxies de KYW dopat amb Yb crescudes sobre substrats de KYW, duen a una eficiència més petita durant el lasejat, permetent establir una correlació directa entre l'existència i la magnitud d'aquest estrès estructural i la pèrdua del rendiment làser en aquestes capes epitaxial, que per altra banda, des del punt de vista espectroscòpic són equivalents.

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A decentralized model reference controller is designed to reduce the magnitude of the transversal vibration of a flexible cable-stayed beam structure induced by a seismic excitation. The controller design is made based on the principle of sliding mode such that a priori knowledge

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Aquest treball és la culminació de les pràctiques realitzades al sincrotró ALBA. Situat a Cerdanyola del Vallès, ALBA és un accelerador de 3a generació que permet emmagatzemar un feix d'electrons confinat de fins a 400 mA a 3GeV d'energia, amb l'objectiu d'obtenir llum a partir dels girs provocats al feix. Els sincrotrons moderns com el d'ALBA, el que pretenen és aconseguir un major control i estabilitat de la llum. Per aconseguir-ho, cal que el feix d'electrons que creen la llum estigui controlat al màxim i la seva òrbita sigui estable. Amb aquest objectiu els sincrotrons estant implementant sistemes de Fast Orbit FeedBack (FOFB) o sistemes realimentats de correcció ràpida de l'òrbita, per realitzar correccions d'almenys 100Hz que estabilitzin el feix d'electrons amb menys d'un 10% de l'amplada del feix (5-10μm). El treball exposa el desenvolupament d'una part del sistema de correcció ràpida de l'òrbita dels electrons (FOFB) que s'està duent a terme al sincrotró ALBA. Concretament, s’han revisat els estudis previs realitzats durant la fase de disseny del sincrotró, s’han recalculat funcions de transferència i retards de tots els elements involucrats al sistema. També s’han realitzat simulacions per confirmar la viabilitat del sistema amb les noves dades i finalment s’ha desenvolupat part de la unitat de control determinant el Hardware i s'ha adquirit dades que permetran analitzar el soroll de l'òrbita que en futurs treballs determinaran millor l'algorisme de la unitat de control.

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We describe the motivation, design, and implementation of the CORNISH survey, an arcsecondresolution radio continuum survey of the inner galactic plane at 5 GHz using the Very Large Array (VLA). It is a blind survey coordinated with the northern SpitzerGLIMPSE I region covering 10°

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The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.

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We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.

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Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to ~1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

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The geometric characterisation of tree orchards is a high-precision activity comprising the accurate measurement and knowledge of the geometry and structure of the trees. Different types of sensors can be used to perform this characterisation. In this work a terrestrial LIDAR sensor (SICK LMS200) whose emission source was a 905-nm pulsed laser diode was used. Given the known dimensions of the laser beam cross-section (with diameters ranging from 12 mm at the point of emission to 47.2 mm at a distance of 8 m), and the known dimensions of the elements that make up the crops under study (flowers, leaves, fruits, branches, trunks), it was anticipated that, for much of the time, the laser beam would only partially hit a foreground target/object, with the consequent problem of mixed pixels or edge effects. Understanding what happens in such situations was the principal objective of this work. With this in mind, a series of tests were set up to determine the geometry of the emitted beam and to determine the response of the sensor to different beam blockage scenarios. The main conclusions that were drawn from the results obtained were: (i) in a partial beam blockage scenario, the distance value given by the sensor depends more on the blocked radiant power than on the blocked surface area; (ii) there is an area that influences the measurements obtained that is dependent on the percentage of blockage and which ranges from 1.5 to 2.5 m with respect to the foreground target/object. If the laser beam impacts on a second target/object located within this range, this will affect the measurement given by the sensor. To interpret the information obtained from the point clouds provided by the LIDAR sensors, such as the volume occupied and the enclosing area, it is necessary to know the resolution and the process for obtaining this mesh of points and also to be aware of the problem associated with mixed pixels.

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Focused ion beam milling is a processing technology which allows flexible direct writing of nanometer scale features efficiently substituting electron beam lithography. No mask need results in ability for patterns writing even on fragile micromechanical devices. In this work we studied the abilities of the tool for fabrication of diffraction grating couplers in silicon nitride waveguides. The gratings were fabricated on a chip with extra fragile cantilevers of sub micron thickness. Optical characterization of the couplers was done using excitation of the waveguides in visible range by focused Gaussian beams of different waist sizes. Influence of Ga+ implantation on the device performance was studied.

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Quickremovalofbiosolidsinaquaculturefacilities,andspeciallyinrecirculatingaquaculturesystems(RAS),isoneofthemostimportantstepinwastemanagement.Sedimentationdynamicsofbiosolidsinanaquaculturetankwilldeterminetheiraccumulationatthebottomofthetank.

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Aquest treball és la culminació de les pràctiques realitzades al sincrotró ALBA. Situat a Cerdanyola del Vallès, ALBA és un accelerador de 3a generació que permet emmagatzemar un feix d'electrons confinat de fins a 400 mA a 3GeV d'energia, amb l'objectiu d'obtenir llum a partir dels girs provocats al feix. Els sincrotrons moderns com el d'ALBA, el que pretenen és aconseguir un major control i estabilitat de la llum. Per aconseguir-ho, cal que el feix d'electrons que creen la llum estigui controlat al màxim i la seva òrbita sigui estable. Amb aquest objectiu els sincrotrons estant implementant sistemes de Fast Orbit FeedBack (FOFB) o sistemes realimentats de correcció ràpida de l'òrbita, per realitzar correccions d'almenys 100Hz que estabilitzin el feix d'electrons amb menys d'un 10% de l'amplada del feix (5-10μm). El treball exposa el desenvolupament d'una part del sistema de correcció ràpida de l'òrbita dels electrons (FOFB) que s'està duent a terme al sincrotró ALBA. Concretament, s’han revisat els estudis previs realitzats durant la fase de disseny del sincrotró, s’han recalculat funcions de transferència i retards de tots els elements involucrats al sistema. També s’han realitzat simulacions per confirmar la viabilitat del sistema amb les noves dades i finalment s’ha desenvolupat part de la unitat de control determinant el Hardware i s'ha adquirit dades que permetran analitzar el soroll de l'òrbita que en futurs treballs determinaran millor l'algorisme de la unitat de control.