Ultra-thin films of alternating semi-interpenetrating layers of a conducting polymer with thermosetting phenolic resins for sensor application

In this work a new method for crosslinking ultra-thin films with potential applications in sensor systems is proposed. The films were produced by layer-by-layer (LbL) assembly using a conducting polymer, poly(o-ethoxyaniline) (POEA), alternated with a thermosetting resin, novolac-type phenolformaldehyde (PF), crosslinked by a simple thermal treatment. The PF resin served as both alternating and crosslinking agents. The films were characterized by Fourier transform infrared (FTIR) and ultraviolet-visible (UV-Vis) spectroscopy, thermogravimetry (TG), desorption, doping/dedoping cycling and electrical measurements. The results showed that film architecture and crosslinking degree can be controlled by the conditions used for film deposition (number of bilayers, polymer concentration, pH, and deposition time), and crosslinking time. Moreover, this approach offers several advantages such as fast curing time and low cost, indicating that these films can be used to produce sensors with improved stability.

Improved moisture and hydrocarbons barrier of epoxy resin-based coating

To improve the surface characteristics of epoxy resin coatings, a treatment by fluorine-containing plasma was used to develop a coating with low surface free energy and improved chemical resistance. Through the coating analysis it was possible to verify information about the CF(n) bond formation and the fluorination depth. The best plasma process parameters presented the best fluorination depth, 90 nm, and fluorine concentration was nearly 30%. The improvement in contact angle of water was 50% and of raw petroleum was 130%. Salt spray test proves that the coating fluorination decreases the chance of substrate corrosion.

Impact of SEG on uniaxially strained MuGFET performance

This work focuses on the impact of the source and drain Selective Epitaxial Growth (SEG) on the performance of uniaxially strained MuGFETs. With the channel length reduction, the normalized transconductance (gm.L./W) of unstressed MuGFETs decreases due to the series resistance and short channel effects (SCE), while the presence of uniaxial strain improves the gm. The competition between the series resistance (R(s)) and the uniaxial strain results in a normalized gm maximum point for a specific channel length. Since the SEG structure influences both R(s) and the strain in the channel, this work studies from room down to low temperature how these effects influence the performance of the triple-gate FETs. For lower temperatures, the strain-induced mobility enhancement increases and leads to a shift in the maximum point towards shorter channel lengths for devices without SEG. This shift is not observed for devices with SEG where the strain level is much lower. At 150 K the gm behavior of short channel strained devices with SEG is similar to the non SEC ones due to the better gm temperature enhancement for devices without SEG caused by the strain. For lower temperatures SEG structure is not useful anymore. (C) 2011 Elsevier Ltd. All rights reserved.

Cr3C2-NiCr and WC-Ni thermal spray coatings as alternatives to hard chromium for erosion-corrosion resistance

Cr3C2-NiCr and WC-Ni coatings are widely used for wear applications at high and room temperature, respectively. Due to the high corrosion resistance of NiCr binder, Cr3C2-NiCr coatings are also used in corrosive environments. The application of WC-Ni coatings in corrosive media is 14 not recommended due to the poor corrosion resistance of the (pure Ni) metallic matrix. It is well known that the addition of Cr to the metallic binder improves the corrosion properties. Erosion-corrosion performance of thermal spray coatings is widely influenced by ceramic phase composition, the size of ceramic particles and also the composition of the metallic binder. In the present work, two types of HVOF thermal spray coatings (Cr3C2-NiCr and WC-Ni) obtained with different spray conditions were studied and compared with conventional micro-cracked hard chromium coatings. Both as-sprayed and polished samples were tested under two erosion-corrosion conditions with different erosivity. Tungsten carbide coatings showed better performance under the most erosive condition, while chromium carbide coatings were superior under less erosive conditions. Some of the tungsten carbide coatings and hard chromium showed similar erosion-corrosion behaviour under more and less erosive conditions. The erosion-corrosion and electrochemical results showed that surface polishing improved the erosion-corrosion properties of the thermally sprayed coatings. The corrosion behaviour of the different coatings has been compared using Electrochemical Impedance Spectroscopy (EIS) and polarization curves. Total material loss due to erosion-corrosion was determined by weight loss measurements. An estimation of the corrosion contribution to the total weight loss was also given. (c) 2007 Elsevier B.V. All rights reserved.

Influence of the heat treatment on the nucleation of silver nanoparticles in Tm(3+) doped PbO-GeO(2) glasses

Nucleation of silver nanoparticles (NPs) in Tm(3+) doped PbO-GeO(2) (PGO) glass is reported. The influence of the heat treatment on the nucleation of silver NPs is studied by means of transmission electron microscopy and optical spectroscopy. Two heat treatment procedures were applied in order to compare their performance. Observation of infrared-to-visible frequency upconversion (UC) luminescence of Tm(3+) ions is reported and correlated with the heat-treatment procedure. Enhancement of the UC emission for samples heat treated during various time intervals is attributed to the increased local field in the vicinity of the NPs. Quenching of the UC signal was also observed and correlated with the growth of NPs amount and size.

Study of an alternative phosphate sealer for replacement of hexavalent chromium

This study evaluates the possibility of replacing the hexavalent chromium passivation treatment used as a sealer after phosphating of carbon steel (SAE 1010) by a treatment with niobium ammonium oxalate (Ox). Samples of carbon steel (SAE 1010) after being phosphated in a zinc phosphate bath (PZn + Ni) were immersed in solution of niobium ammonium oxalate (250 mg L(-1) of Nb) either at pH 3.0 or pH 8.0. A passivation treatment with a solution with CrO(3) (200 mg L(-1) of Cr(6+)) was also used for reference. The corrosion resistance of the phosphated samples after passivation treatments was analyzed in a NaCl 0.5 mol L(-1) solution using electrochemical impedance spectroscopy (EIS) and anodic polarization curves. Salt spray tests were also performed to evaluate their corrosion resistance. The results showed that the highest corrosion resistance was obtained by passivation in a solution with (250 mg L(-1) of Nb) at pH 8.0. (C) 2010 Elsevier B.V. All rights reserved.

Effects of mechanical properties, residual stress and indenter tip geometry on instrumented indentation data in thin films

In this work, an axisymmetric two-dimensional finite element model was developed to simulate instrumented indentation testing of thin ceramic films deposited onto hard steel substrates. The level of film residual stress (sigma(r)), the film elastic modulus (E) and the film work hardening exponent (n) were varied to analyze their effects on indentation data. These numerical results were used to analyze experimental data that were obtained with titanium nitride coated specimens, in which the substrate bias applied during deposition was modified to obtain films with different levels of sigma(r). Good qualitative correlation was obtained when numerical and experimental results were compared, as long as all film properties are considered in the analyses, and not only sigma(r). The numerical analyses were also used to further understand the effect of sigma(r) on the mechanical properties calculated based on instrumented indentation data. In this case, the hardness values obtained based on real or calculated contact areas are similar only when sink-in occurs, i.e. with high n or high ratio VIE, where Y is the yield strength of the film. In an additional analysis, four ratios (R/h(max)) between indenter tip radius and maximum penetration depth were simulated to analyze the combined effects of R and sigma(r) on the indentation load-displacement curves. In this case, or did not significantly affect the load curve exponent, which was affected only by the indenter tip radius. On the other hand, the proportional curvature coefficient was significantly affected by sigma(r) and n. (C) 2010 Elsevier B.V. All rights reserved.

Numerical study of tensile tests conducted on systems with elastic-plastic films deposited onto elastic-plastic substrates

In this work, a series of two-dimensional plane-strain finite element analyses was conducted to further understand the stress distribution during tensile tests on coated systems. Besides the film and the substrate, the finite element model also considered a number of cracks perpendicular to the film/substrate interface. Different from analyses commonly found in the literature, the mechanical behavior of both film and substrate was considered elastic-perfectly plastic in part of the analyses. Together with the film yield stress and the number of film cracks, other variables that were considered were crack tip geometry, the distance between two consecutive cracks and the presence of an interlayer. The analysis was based on the normal stresses parallel to the loading axis (sigma(xx)), which are responsible for cohesive failures that are observed in the film during this type of test. Results indicated that some configurations studied in this work have significantly reduced the value of sigma(xx) at the film/substrate interface and close to the pre-defined crack tips. Furthermore, in all the cases studied the values of sigma(xx) were systematically larger at the film/substrate interface than at the film surface. (C) 2010 Elsevier B.V. All rights reserved.

Transport Barkhausen-like noise in uniaxially pressed Bi(1.65)Pb(0.35)Sr(2)Ca(2)Cu(3)O(10+delta) ceramic samples

We report on the detection of the transport Barkhausen-like noise (TBN) in polycrystalline samples of Bi(1.65)Pb(0.35)Sr(2)Ca(2) Cu(3)O(10+delta) (Bi-2223) which were subjected to different uniaxial compacting pressures. The transport Barkhausen-like noise was measured when the sample was subjected to an ac triangular-shape magnetic field (f similar to 1 Hz) with maximum amplitude B(max) approximate to 5.5 mT, in order to avoid the flux penetration within the superconducting grains. Analysis of the TBN signal, measured for several values of excitation current density, indicated that the applied magnetic field in which the noise signal first appears, B(a)(t(i)), is closely related to the magnetic-flux pinning capability of the material. The combined results are consistent with the existence of three different superconducting levels within the samples: (i) the superconducting grains; (ii) the superconducting clusters; and (iii) the weak-links. We finally argue that TBN measurements constitute a powerful tool for probing features of the intergranular transport properties in polycrystalline samples of high-T(c) superconductors. (C) 2010 Elsevier B.V. All rights reserved.

Thin titanium oxide films deposited by e-beam evaporation with additional rapid thermal oxidation and annealing for ISFET applications

Titanium oxide (TiO(2)) has been extensively applied in the medical area due to its proved biocompatibility with human cells [1]. This work presents the characterization of titanium oxide thin films as a potential dielectric to be applied in ion sensitive field-effect transistors. The films were obtained by rapid thermal oxidation and annealing (at 300, 600, 960 and 1200 degrees C) of thin titanium films of different thicknesses (5 nm, 10 nm and 20 nm) deposited by e-beam evaporation on silicon wafers. These films were analyzed as-deposited and after annealing in forming gas for 25 min by Ellipsometry, Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy (RAMAN), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectroscopy (RBS) and Ti-K edge X-ray Absorption Near Edge Structure (XANES). Thin film thickness, roughness, surface grain sizes, refractive indexes and oxygen concentration depend on the oxidation and annealing temperature. Structural characterization showed mainly presence of the crystalline rutile phase, however, other oxides such Ti(2)O(3), an interfacial SiO(2) layer between the dielectric and the substrate and the anatase crystalline phase of TiO(2) films were also identified. Electrical characteristics were obtained by means of I-V and C-V measured curves of Al/Si/TiO(x)/Al capacitors. These curves showed that the films had high dielectric constants between 12 and 33, interface charge density of about 10(10)/cm(2) and leakage current density between 1 and 10(-4) A/cm(2). Field-effect transistors were fabricated in order to analyze I(D) x V(DS) and log I(D) x Bias curves. Early voltage value of -1629 V, R(OUT) value of 215 M Omega and slope of 100 mV/dec were determined for the 20 nm TiO(x) film thermally treated at 960 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

Experimental and theoretical study of transport properties in uniaxially pressed (Bi, Pb)(2)Sr(2)Ca(2)Cu(3)O(10+delta) ceramic samples

Experimental and theoretical studies on the magnetic field dependence of the electrical resistance R(B(a)) and the transport noise (TN) in polycrystalline high-T(c) superconductors subjected to different uniaxial compacting pressures were conducted. X-ray diffraction rocking curves were performed in different surfaces of the samples in order to investigated the degree of texture The results indicated an improvement of the degree of texture with increasing the uniaxial compacting pressure In theoretical simulations of the data, the polycrystalline superconductors were described as a series-parallel array of Josephson devices The intergranular magnetic field is described within the framework of the intragranular flux-trapping model and the distribution of the grain-boundary angles is assumed to follow the Rayleigh statistical function The proposed model describes well the experimental magnetoresistance R(B(a)) data We have found that the behavior of the R(B(a)) curves changes appreciably when different uniaxially compacting pressures are applied to the sample and such a changes are reproduced by the model when different grain-boundary angles distributions are used In addition, changes in the R(B(a)) dependence have their counterparts in the experimental transport noise signals (C) 2009 Elsevier B.V. All rights reserved

Junctionless Multiple-Gate Transistors for Analog Applications

This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. The study has been performed for devices operating in saturation as single-transistor amplifiers, and we have considered the dependence of the analog properties on fin width W(fin) and temperature T. Furthermore, this paper aims at providing a physical insight into the analog parameters of JL transistors. For that, in addition to device characterization, 3-D device simulations were performed. It is shown that, depending on gate voltage, JL devices can present both larger Early voltage V(EA) and larger intrinsic voltage gain A(V) than IM devices of similar dimensions. In addition, V(EA) and A(V) are always improved in JL devices when the temperature is increased, whereas they present a maximum value around room temperature for IM transistors.

Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SCI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures. (C) 2009 Elsevier Ltd. All rights reserved.

Electron beam induced second-harmonic generation in Er(3+) doped PbO-GeO(2) glasses containing silver nanoparticles

Electron beam induced second harmonic generation (SHG) is studied in Er(3+) doped PbO-GeO(2) glasses containing silver nanoparticles with concentrations that are controlled by the heat-treatment of the samples. The SHG is observed at T = 4.2 K using a p-polarized laser beam at 1064 nm. Enhancement of the SHG is observed in the samples that are submitted to electron beam incidence. The highest value of the nonlinear susceptibility, 2.08 pm/V, is achieved for the sample heat-treated during 72 h and submitted to an electron beam current of 15 nA. The samples that were not exposed to the electron beam present a susceptibility of a parts per thousand 0.5 pm/V.

Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC and standard SOI MOS devices considering the same mask dimensions. It is shown that by using CC devices, buffer gain very close to the theoretical limit can be achieved, with improved linearity, while for standard devices the gain departs from the theoretical value depending on the inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to confirm some hypotheses proposed to explain the gain behavior observed in the experimental data. By using numerical simulations the channel length has been varied, showing that the gain of buffers implemented with CC devices remains close to the theoretical limit even when short-channel devices are adopted. It has also been shown that the length of a source-follower buffer using CC devices can be reduced by a factor of 5, in comparison with a standard Sol MOSFET, without gain loss or linearity degradation. (C) 2008 Elsevier Ltd. All rights reserved.