Laboratory formation of a scaled protostellar jet by coaligned poloidal magnetic field

Although bipolar jets are seen emerging from a wide variety of astrophysical systems, the issue of their formation and morphology beyond their launching is still under study. Our scaled laboratory experiments, representative of young stellar object outflows, reveal that stable and narrow collimation of the entire flow can result from the presence of a poloidal magnetic field whose strength is consistent with observations. The laboratory plasma becomes focused with an interior cavity. This gives rise to a standing conical shock from which the jet emerges. Following simulations of the process at the full astrophysical scale, we conclude that it can also explain recently discovered x-ray emission features observed in low-density regions at the base of protostellar jets, such as the well-studied jet HH 154.

Optimisation of source/drain extension region profile for suppression of short channel effects in sub-50 nm DG SOI MOSFETs with high- k gate dielectrics

Novel technology dependent scaling parameters i.e. spacer to gradient ratio and effective channel length (Leff) are proposed for source/drain engineered DG MOSFET, and their significance in minimizing short channel effects (SCES) in high-k gate dielectrics is discussed in detail. Results show that a high-k dielectric should be associated with a higher spacer to gradient ratio to minimise SCEs The analytical model agrees with simulated data over the entire range of spacer widths, doping gradients, high-k gate dielectrics and effective channel lengths.

Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations

In this paper, we propose for the first time, an analytical model for short channel effects in nanoscale source/drain extension region engineered double gate (DG) SOI MOSFETs. The impact of (i) lateral source/drain doping gradient (d), (ii) spacer width (s), (iii) spacer to doping gradient ratio (s/d) and (iv) silicon film thickness (T-si), on short channel effects - threshold voltage (V-th) and subthreshold slope (S), on-current (I-on), off-current (I-on) and I-on/I-off is extensively analysed by using the analytical model and 2D device simulations. The results of the analytical model confirm well with simulated data over the entire range of spacer widths, doping gradients and effective channel lengths. Results show that lateral source/drain doping gradient along with spacer width can not only effectively control short channel effects, thus presenting low off-current, but can also be optimised to achieve high values of on-currents. The present work provides valuable design insights in the performance of nanoscale DG Sol devices with optimal source/drain engineering and serves as a tool to optimise important device and technological parameters for 65 nm technology node and below. (c) 2006 Elsevier Ltd. All rights reserved.

Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers

A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a midgap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal, gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.

Molecular Hydrogen Emission from Protoplanetary Disks: Effects of X-ray Irradiation and Dust Evolution

Detailed models for the density and temperature profiles of gas and dust in protoplanetary disks are constructed by taking into account X-ray and UV irradiation from a central T Tauri star, as well as dust size growth and settling toward the disk midplane. The spatial and size distributions of dust grains are numerically computed by solving the coagulation equation for settling dust particles, with the result that the mass and total surface area of dust grains per unit volume of the gas in the disks are very small, except at the midplane. The H2 level populations and line emission are calculated using the derived physical structure of the disks. X-ray irradiation is the dominant heating source of the gas in the inner disk and in the surface layer, while the UV heating dominates otherwise. If the central star has strong X-ray and weak UV radiation, the H2 level populations are controlled by X-ray pumping, and the X-rayinduced transition lines could be observable. If the UV irradiation is strong, the level populations are controlled by thermal collisions or UV pumping, depending on the dust properties. As the dust particles evolve in the disks, the gas temperature at the disk surface drops because the grain photoelectric heating becomes less efficient. This makes the level populations change from LTE to non-LTE distributions, which results in changes to the line ratios. Our results suggest that dust evolution in protoplanetary disks could be observable through the H2 line ratios. The emission lines are strong from disks irradiated by strong UV and X-rays and possessing small dust grains; such disks will be good targets in which to observe H2 emission.

The radiation-inducible pE9 promoter driving inducible nitric oxide synthase radiosensitizes hypoxic tumour cells to radiation

Driving high-level transgene expression in a tumour-specific manner remains a key requirement in the development of cancer gene therapy. We have previously demonstrated the strong anticancer effects of generating abnormally high levels of intracellular NO• following the overexpression of the inducible nitric oxide synthase (iNOS) gene. Much of this work has focused on utilizing exogenously activated promoters, which have been primarily induced using X-ray radiation. Here we further examine the potential of the pE9 promoter, comprising a combination of nine CArG radio-responsive elements, to drive the iNOS transgene. Effects of X-ray irradiation on promoter activity were compared in vitro under normoxic conditions and various degrees of hypoxia. The pE9 promoter generated high-level transgene expression, comparable with that achieved using the constitutively driven cytomegalovirus promoter. Furthermore, the radio-resistance of radiation-induced fibrosarcoma-1 (RIF-1) mouse sarcoma cells exposed to 0.1 and 0.01% O2 was effectively eliminated following transfection with the pE9/iNOS construct. Significant inhibition of tumour growth was also observed in vivo following direct intratumoural injection of the pE9/iNOS construct compared to empty vector alone (P<0.001) or to a single radiation dose of 10?Gy (P<0.01). The combination of both therapies resulted in a significant 4.25 day growth delay compared to the gene therapy treatment alone (P<0.001). In summary, we have demonstrated the potential of the pE9/iNOS construct for reducing radio-resistance conferred by tumour cell hypoxia in vitro and in vivo, with greater tumour growth delay observed following the treatment with the gene therapy construct as compared with radiotherapy alone.

6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology

The impact of source/drain engineering on the performance of a six-transistor (6-T) static random access memory (SRAM) cell, based on 22 nm double-gate (DG) SOI MOSFETs, has been analyzed using mixed-mode simulation, for three different circuit topologies for low voltage operation. The trade-offs associated with the various conflicting requirements relating to read/write/standby operations have been evaluated comprehensively in terms of eight performance metrics, namely retention noise margin, static noise margin, static voltage/current noise margin, write-ability current, write trip voltage/current and leakage current. Optimal design parameters with gate-underlap architecture have been identified to enhance the overall SRAM performance, and the influence of parasitic source/drain resistance and supply voltage scaling has been investigated. A gate-underlap device designed with a spacer-to-straggle (s/sigma) ratio in the range 2-3 yields improved SRAM performance metrics, regardless of circuit topology. An optimal two word-line double-gate SOI 6-T SRAM cell design exhibits a high SNM similar to 162 mV, I-wr similar to 35 mu A and low I-leak similar to 70 pA at V-DD = 0.6 V, while maintaining SNM similar to 30% V-DD over the supply voltage (V-DD) range of 0.4-0.9 V.

High tolerance to gate misalignment in low voltage gate-underlap double gate MOSFETs

.In this letter, we demonstrate for the first time that gate misalignment is not a critical limiting factor for low voltage operation in gate-underlap double gate (DG) devices. Our results show that underlap architecture significantly extends the tolerable limit of gate misalignment in 25 nm devices. DG MOSFETs with high degree of gate misalignment and optimal gate-underlap design can perform comparably or even better than self-aligned nonunderlap devices. Results show that spacer-to-straggle (s/sigma) ratio, a key design parameter for underlap devices, should be within the range of 2.3-3.0 to accommodate back gate misalignment. These results are very significant as the stringent process control requirements for achieving self-alignment in nanoscale planar DG MOSFETs are considerably relaxed

Performance projections and design optimization of planar double gate SOI MOSFETs for logic technology applications

In this paper, by investigating the influence of source/drain extension region engineering (also known as gate-source/drain underlap) in nanoscale planar double gate (DG) SOI MOSFETs, we offer new insights into the design of future nanoscale gate-underlap DG devices to achieve ITRS projections for high performance (HP), low standby power (LSTP) and low operating power (LOP) logic technologies. The impact of high-kappa gate dielectric, silicon film thickness, together with parameters associated with the lateral source/drain doping profile, is investigated in detail. The results show that spacer width along with lateral straggle can not only effectively control short-channel effects, thus presenting low off-current in a gate underlap device, but can also be optimized to achieve lower intrinsic delay and higher on-off current ratio (I-on/I-off). Based on the investigation of on-current (I-on), off-current (I-off), I-on/I-off, intrinsic delay (tau), energy delay product and static power dissipation, we present design guidelines to select key device parameters to achieve ITRS projections. Using nominal gate lengths for different technologies, as recommended from ITRS specification, optimally designed gate-underlap DG MOSFETs with a spacer-to-straggle (s/sigma) ratio of 2.3 for HP/LOP and 3.2 for LSTP logic technologies will meet ITRS projection. However, a relatively narrow range of lateral straggle lying between 7 to 8 nm is recommended. A sensitivity analysis of intrinsic delay, on-current and off-current to important parameters allows a comparative analysis of the various design options and shows that gate workfunction appears to be the most crucial parameter in the design of DG devices for all three technologies. The impact of back gate misalignment on I-on, I-off and tau is also investigated for optimized underlap devices.

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.

Neuropeptide-like protein diversity in phylum Nematoda

This study reports the identification of nematode neuropeptide-like protein (nlp) sequelogs from the GenBank expressed sequence tag (EST) database, using BLAST (Basic Local Alignment Search Tool) search methodology. Search strings derived from peptides encoded by the 45 known Caenorhabatitis elegans nlp genes were used to identify more than 1000 ESTs encoding a total of 26 multi-species nlp sequelogs. The remaining 18 nlps (nlp-4, -16, -24 through -36, -39, -41 and -45) were identified only in C elegans, while the sole EST representative of nlp-23 was from Caenorhabditis remanei. Several ESTs encoding putative antibacterial peptides similar to those encoded by the C elegans genes nlp-24-33 were observed in several parasite species. A novel gene (nlp-46) was identified, encoding a single, amidated dodecapeptide (NIA[I/T]GR[G/A]DG[F/L]RPG) in eight species. Secretory signal peptides were identified in at least one species representing each nlp sequelog, confirming that all 46 nematode nlp genes encode secretory peptides. A random sub-set of C elegans NLPs was tested physiologically in Ascaris suum ovijector and body wall muscle bioassays. None of the peptides tested were able to modulate ovijector activity, while only three displayed measurable myoactivity on somatic body wall muscle. AFAAGWNRamide (from nlp-23) and AVNPFLDSIamide (nlp-3) both produced a relaxation of body wall muscle, while AIPFNGGMYamide (nlp-10) induced a transient contraction. Numerical analyses of nip-encoding ESTs demonstrate that nlp-3, -13, -14, -15 and -18 are amongst the most highly represented transcripts in the dataset. Using available bioinformatics resources, this study delineates the nlp complement of phylum Nematoda, providing a rich source of neuropeptide ligands for deorphanisation of nematode neuropeptide receptors. (C) 2008 Australian Society for Parasitology Inc. Published by Elsevier Ltd. All rights reserved.