Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0

Synchrotron X-ray diffraction study of the phase transformations in titanium alloys

High-resolution synchrotron X-ray diffraction was used to study the phase transformations in titanium alloys. Three titanium alloys were investigated: Ti-6Al-4V, Ti-6Al-2Sn-4Zr-2Mo-0.08Si and beta21s. Both room and high temperature measurements were performed. The room temperature experiments were performed to study the structure of the alloys after different heat treatments, namely as received (AR), furnace cooling (FC), water quenching (WQ) and water quenching followed by ageing. The alpha, alpha', alpha'' and beta phases were observed in different combinations depending on the heat treatment conditions and the alloy studied. A multicomponent hexagonal close packed (hcp) alpha phase, with different c and the same a lattice parameters, was detected in Ti-6Al-4V after FC. High temperature synchrotron X-ray diffraction was used for 'in situ' study of the transformations on the sample surface at elevated temperatures. The results were used to trace the kinetics of surface oxidation and the concurrent phase transformations taking place under different conditions. The influence of the temperature and oxygen content on the lattice parameters of the alpha phase was derived and new data obtained on the coefficients of thermal expansion in the different directions of the hcp alpha phase, for Ti-6Al-4V and Ti-6Al-2Sn-4Zr-2Mo-0.08Si.

LPCVD of tungsten by selective deposition on silicon

Beta-phase W, selectively grown at 440C had resistivity 20 micro-ohm cm and maximum layer thickness 100nm. Hydrogen passivation proved essential in this process. Higher deposition temperatures resulted in increased layer thickness but incorporated WSi2 and alpha- phase W. Self limiting W grown on polycrystalline and heavily doped silicon yielded reduced thickness. Boron is involved in the WF6 reduction reaction but phosphorus is not and becomes incorporated in the W layer. The paper establishes an optimised and novel CVD process suited to IC contact technology. A funded technology transfer contract with National Semiconductor Greenock (M Fallon) resulted from this work.

Current-induced transition in atomic-sized contacts of metallic alloys

We have measured conductance histograms of atomic point contacts made from the noble-transition-metal alloys CuNi, AgPd, and AuPt for a concentration ratio of 1:1. For all alloys these histograms at low-bias voltage (below 300 mV) resemble those of the noble metals, whereas at high bias (above 300 mV) they resemble those of the transition metals. We interpret this effect as a change in the composition of the point contact with bias voltage. We discuss possible explanations in terms of electromigration and differential diffusion induced by current heating.