Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys
| Data(s) |
01/12/2004
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|---|---|
| Resumo |
Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0 |
| Identificador |
http://dx.doi.org/10.1016/j.mseb.2004.07.019 http://www.scopus.com/inward/record.url?scp=10644279940&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Srinivasan , G , Bain , M , Bhattacharya , S , Baine , P , Armstrong , M , Gamble , H & McNeill , D 2004 , ' Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys ' Materials Science and Engineering B , vol 114-115 , no. SPEC. ISS. , pp. 223-227 . DOI: 10.1016/j.mseb.2004.07.019 |
| Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials #/dk/atira/pure/subjectarea/asjc/2500 #Materials Science(all) #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics |
| Tipo |
article |
