TUNING COLOURIMETRIC AND FLUOROMETRIC GAS SENSORS FOR CARBON-DIOXIDE

The basic theory behind conventional colourimetric and fluorimetric optical sensors for CO2 is examined and special attention is given to the effect on sensor response of the key parameters of initial base concentration and dye acid dissociation constant, K(D). Experimental results obtained in aqueous solution using a variety of different dyes and initial base concentrations are consistent with the predictions made by the theoretical model. A series of model-generated pK(D) versus %CO2 curves for different initial base concentrations allow those interested in constructing an optical CO2 sensor to readily identify the optimum dye/initial base combination for their sensor; the response of the sensor can be subsequently fine-tuned through a minor variation in the initial base concentration. The model and all its predictions appear also to apply to the new generation of plastic film CO2 sensors which have just been developed.

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of similar to 100 K) in the diode resistance-temperature (R(D)-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R(D)-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T-0 parameter with T-0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, phi(b)(-0) = 223 mV, with an (assumed) Gaussian distribution of standard deviation sigma(phi) = 12.5 mV. These data are correlated with the zero-bias barrier height, phi(j)(0) = 192 mV (at T = 90 K), the photoresponse barrier height, phi(ph) = 205 mV, and the flatband barrier height, phi(fb) = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dE(g)(i)/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

ANALYSIS OF SURFACE-PLASMON POLARITON ENHANCEMENT IN PHOTODETECTION BY AL-GAAS SCHOTTKY DIODES

The surface plasmon polariton mediated photoresponse from Al-GaAs diodes is examined in a prism-air gap-diode configuration as a function of both the wavelength of the incident light and thickness of the Al electrode. The experimental data shows a pronounced dip in reflectance as a function of internal angle of incidence in the prism, due to the excitation of the surface plasmon polariton at the Al-air interface, and a corresponding peak in device photosignal. Careful modelling of reflectance and quantum efficiency data shows that the bulk of the signal is generated by light which is re-radiated from this surface mode into the semiconductor substrate where it is absorbed by the creation of electron-hole pairs in the depletion region. This holds for all the wavelengths used here (all are shorter than the GaAs absorption edge) and across the thickness range of the Al electrodes (20-50 nm). Quantum efficiencies in the range 0.5-22% and enhancement factors of typically 7.5 were recorded in this investigation.

An alternative methodology in Schottky diode physics

The fabrication and electrical characterization of Schottky junction diodes have been extensively researched for three-quarters of a century since the original work of Schottky in 1938. This study breaks from the highly standardized regime of such research and provides an alternative methodology that prompts novel, more efficient applications of the adroit Schottky junction in areas such as chemical and thermal sensing. The core departure from standard Schottky diode configuration is that the metal electrode is of comparable or higher resistance than the underlying semiconductor. Further, complete electrical characterization is accomplished through recording four-probe resistance-temperature (R-D-T) characteristics of the device, where electrical sourcing and sensing is done only via the metal electrode and not directly through the semiconductor. Importantly, this results in probing a nominally unbiased junction while eliminating the need for an Ohmic contact to the semiconductor. The characteristic R-D-T plot shows two distinct regions of high (metal) and low (semiconductor) resistances at low and high temperatures, respectively, connected by a crossover region of width, DT, within which there is a large negative temperature coefficient of resistance. The R-D-T characteristic is highly sensitive to the Schottky barrier height; consequently, at a fixed temperature, R-D responds appreciably to small changes in barrier height such as that induced by absorption of a chemical species (e.g., H-2) at the interface. A theoretical model is developed to simulate the R-D-T data and applied to Pd/p-Si and Pt/p-Si Schottky diodes with a range of metal electrode resistance. The analysis gives near-perfect fits to the experimental R-D-T characteristics, yielding the junction properties as fit parameters. The modelling not only helps elucidate the underlying physics but also helps to comprehend the parameter space essential for the discussed applications. Although the primary regime of application is limited to a relatively narrow range (DT) for a given type of diode, the alternative methodology is of universal applicability to all metal-semiconductor combinations forming Schottky contacts. (C) 2015 AIP Publishing LLC.

Use of room temperature ionic liquids in gas sensor design

The attainable steady-state limiting currents and time responses of membrane-covered and membrane-independent gas sensors incorporating different electrode and electrolyte materials have been compared. A new design comprising a membrane-free microelectrode modified with a thin layer of a room temperature ionic liquid is considered. While the use of ionic liquid as electrolyte eliminates the need for a membrane and added supporting electrolyte, the slower diffusion of analyte within the more viscous medium results in slower time responses. Such sensors do, however, have potential application in more extreme operating conditions, such as high temperature and pressure, where traditional solvents would volatise.

Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers

Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 mu m wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above lambda = 4.0 mu m and particularly as the cut-off wavelength (lambda approximate to 5.5 mu m) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at lambda = 5.3 mu m. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

Thin film composite optical waveguides for sensor applications: a review

We review the design and fabrication of thin-film composite optical waveguides (OWG) with high refractive index for sensor applications. A highly sensitive optical sensor device has been developed on the basis of thin-film, composite OWG. The thin-film OWG was deposited onto the surface of a potassium-ion-exchanged (K+) glass OWG by sputtering or spin coating (5-9 mm wide, and with tapers at both ends). By allowing an adiabatic transition of the guided light from the secondary OWG to the thin-film OWG, the electric field of the evanescent wave at the thin film was enhanced. The attenuation of the guided light in the thin film layer was small, and the guided light intensity changed sensitively with the refractive index of the cladding layer. Our experimental results demonstrate that thin-film, composite OWG gas sensors or immunosensors are much more sensitive than sensors based on other technologies. (c) 2004 Elsevier B.V. All rights reserved.

Time-Resolved DRIFTS, MS, and Resistance Study of SnO2 Materials: The Role of Surface Hydroxyl Groups in Formation of Donor States

Time-resolved DRIFTS, MS, and resistance measurements were used to study the interaction of undoped and Pd-doped SnO2 with H-2 in air and argon at 300 degrees C. Using first-order kinetics, we compare the time constants for the resistance drop and its partial recovery with those of the surface hydroxyl evolution and water formation in the gas phase upon exposure to hydrogen. In the case of the undoped oxide, resistance and bridging hydroxyls (BOHs) evolve similarly, manifesting a fast main drop followed by recovery at a similar rate. The rate of water formation for this material was found to be much slower than that of the main drop in both the resistance and BOHs. In contrast, the resistance change for SnO2-Pd appeared to be similar to that of water formation, and no correlation was found between the evolution of resistance and surface OHs. Isotopic exchange on both materials revealed that water formation occurs via fast and slow hydrogen transfer to surface oxygen species. While the former originates from just-adsorbed hydrogen, the latter appears to proceed from the preadsorbed OHs. Both surfaces exhibit close interaction between chemisorbed oxygen and existing bridging OH groups, indicating that the latter is an intermediate in the hydrogen oxidation and generation of donor states on the surface.

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

OPTIMIZATION OF THE SLOW-MODE PLASMON POLARITON IN LIGHT-EMITTING TUNNEL-JUNCTIONS

Light emitted from metal/oxide/metal tunnel junctions can originate from the slow-mode surface plasmon polariton supported in the oxide interface region. The effective radiative decay of this mode is constrained by competition with heavy intrinsic damping and by the need to scatter from very small scale surface roughness; the latter requirement arises from the mode's low phase velocity and the usual momentum conservation condition in the scattering process. Computational analysis of conventional devices shows that the desirable goals of decreased intrinsic damping and increased phase velocity are influenced, in order of priority, by the thickness and dielectric function of the oxide layer, the type of metal chosen for each conducting electrode, and temperature. Realizable devices supporting an optimized slow-mode plasmon polariton are suggested. Essentially these consist of thin metal electrodes separated by a dielectric layer which acts as a very thin (a few nm) electron tunneling barrier but a relatively thick (several 10's of nm) optically lossless region. (C) 1995 American Institute of Physics.

Microelectrode Voltammetry of Dioxygen Reduction in a Phosphonium Cation-Based Room-Temperature Ionic Liquid: Quantitative Studies

Microelectrode voltammetry is used to study the electrochemical reduction of dioxygen, O-2, in the room-temperature ionic liquid trihexyl(tetradecyl)phosphonium trifluorotris(pentafluoroethyl)phosphate [P6,6,6,14][FAP]. The nature of the unusual voltammetric waves is quantitatively modeled via digital simulation with the aim of clarifying apparent inconsistencies in the literature. The reduction is shown to proceed via a two-electron reaction and involve the likely capture of a proton from the solvent system. The oxidative voltammetric signals seen at fast scan rates are interpreted as resulting from the reoxidation of HO2 center dot. In the presence of large amounts of dissolved carbon dioxide the reductive currents decrease by a factor of ca. two, consistent with the trapping of the superoxide radical, O-2(center dot), intermediate in the two-electron reduction process.

Design of an automated solar concentrator for the pyrolysis of scrap rubber

An automated solar reactor system was designed and built to carry out catalytic pyrolysis of scrap rubber tires at 550°C. To maximize solar energy concentration, a two degrees-of-freedom automated sun tracking system was developed and implemented. Both the azimuth and zenith angles were controlled via feedback from six photo-resistors positioned on a Fresnel lens. The pyrolysis of rubber tires was tested with the presence of two types of acidic catalysts, H-beta and H-USY. Additionally, a photoactive TiO<inf>2</inf> catalyst was used and the products were compared in terms of gas yields and composition. The catalysts were characterized by BET analysis and the pyrolysis gases and liquids were analyzed using GC-MS. The oil and gas yields were relatively high with the highest gas yield reaching 32.8% with H-beta catalyst while TiO<inf>2</inf> gave the same results as thermal pyrolysis without any catalyst. In the presence of zeolites, the dominant gasoline-like components in the gas were propene and cyclobutene. The TiO<inf>2</inf> and non-catalytic experiments produced a gas containing gasoline-like products of mainly isoprene (76.4% and 88.4% respectively). As for the liquids they were composed of numerous components spread over a wide distribution of C<inf>10</inf> to C<inf>29</inf> hydrocarbons of naphthalene and cyclohexane/ene derivatives.