Laser annealing of sputtered silicon for wafer-bonding applications

Sputtered silicon is investigated as a bonding layer for transfer of pre-processed silicon layers to various insulating substrates. Although the material appears suitable for low temperature processing, previous work has shown that gas trapped in the pores of the sputtered material is released at temperatures above 350 degrees C and further increases of temperature lead to destruction of any bonded interface. Pre-annealing at 1000 degrees C before bonding drives out gas and/or seals the surface, but for device applications where processing temperatures must be kept below about 300 degrees C, this technique cannot be used. In the current work, we have investigated the effect of excimer laser-annealing to heat the sputtered silicon surface to high temperature whilst minimising heating of the underlying substrate. Temperature profile simulations are presented and the results of RBS, TEM and AFM used to characterise the annealed layers. The results verify that gases are present in the sub-surface layers and suggest that while sealing of the surface is important for suppression of the out-diffusion of gases, immediate surface gas removal may also play a role. The laser-annealing technique appears to be an effective method of treating sputtered silicon, yielding a low roughness surface suitable for wafer bonding, thermal splitting and layer transfer.

Phase agile reflectarray cells based on liquid crystals

Experimental results at X-band are used to compare the electromagnetic scattering from a printed reflectarray cell, which is constructed on 500 mu m thick layers of three different nematic state liquid crystals. It is shown that a small voltage can be used to vary the permittivity of the tunable substrate and thereby control the phase of the reflected signals. Numerical results using Ansoft HFSS are compared with the measured phase, resonant frequencies and signal attenuation for two orientations of the liquid crystal molecules. Data fitting is employed to quantify the loss tangent and the permittivity values of the three anisotropic specimens. The performance trade-offs that are imposed by the use of commercially available materials are discussed, and the computer model is used to specify the electrical properties of a liquid crystal mixture, which can provide a signal loss of <1 dB and a dynamic phase range of 300 degrees from the patch elements at 10 GHz.

Liquid-crystal-based reflectarray antenna with electronically switchable monopulse patterns

A printed rcflectarray antenna, which generates a beam that can be electronically switched from a sum to a difference radiation pattern, is presented. This is achieved by applying a bias voltage of 20 V to one-half of the aperture, which is constructed above a 500 mu m cavity containing liquid crystals. Simulated results are shown to be in good agreement with measurements at X-band.

Polarisation independent bandpass FSS

The spectral transmittance of a frequency selective surface (FSS), which consists of two free-standing arrays of short-circuited nested annular slots, is presented. The FSS was designed to provide a minimum of 20 dB isolation between the frequency bands 316.5-325.5 and 349.5-358.5 GHz when the filter operates in the TE and TM planes at 45 degrees incidence. Experimental results, which are in close agreement with the computed transmission coefficients, show that the maximum insertion loss is 0.9 dB, and the minimum cross-polar discrimination is at least 21 dB in the passbands. The FSS yields virtually identical spectral responses in the two polarisation planes over the frequency range 315-359 GHz.

Liquid crystal tunable mm wave frequency selective surface

A frequency selective surface (FSS) which exploits the dielectric anisotropy of liquid crystals to generate an electronically tunable bandpass filter response at D Band (110-170 GHz) is presented. The device consists of two printed arrays of slot elements which are separated by a 130-mu m thick layer of liquid crystals. A 3% shift in the filter passband occurs when the substrate permittivity is increased by applying a control signal of 10 V. Measured results show that the insertion loss increases from -3.7 dB to -10.4 dB at resonance (134 GHz), thus demonstrating the potential to create a FSS which can be switched between a transmitting and a reflecting structure.

Single sideband FSS with high image rejection

The design of a quasi-optical single sideband filter, which provides more than 30 dB of isolation between the frequency bands 294-305.5 and 329.5-341.5 GHz in the TM plane at 45 degrees incidence, is described. The structure, which consists of three free-standing arrays of dipole slot elements, generates a bandpass spectral response with an insertion loss below 0.5 dB at resonance. Simulated and measured transmission coefficients in the range 250-400 GHz are shown to be in good agreement.