How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?

In the present work, by investigating the influence of source/drain (S/D) extension region engineering (also known as gate-underlap architecture) in planar Double Gate (DG) SOI MOSFETs, we offer new design insights to achieve high tolerance to gate misalignment/oversize in nanoscale devices for ultra-low-voltage (ULV) analog/rf applications. Our results show that (i) misaligned gate-underlap devices perform significantly better than DC devices with abrupt source/drain junctions with identical misalignment, (ii) misaligned gate underlap performance (with S/D optimization) exceeds perfectly aligned DG devices with abrupt S/D regions and (iii) 25% back gate misalignment can be tolerated without any significant degradation in cut-off frequency (f(T)) and intrinsic voltage gain (A(VO)). Gate-underlap DG devices designed with spacer-to-straggle ratio lying within the range 2.5 to 3.0 show best tolerance to misaligned/oversize back gate and indeed are better than self-aligned DG MOSFETs with non-underlap (abrupt) S/D regions. Impact of gate length and silicon film thickness scaling is also discussed. These results are very significant as the tolerable limit of misaligned/oversized back gate is considerably extended and the stringent process control requirements to achieve self-alignment can be relaxed for nanoscale planar ULV DG MOSFETs operating in weak-inversion region. The present work provides new opportunities for realizing future ULV analog/rf design with nanoscale gate-underlap DG MOSFETs. (C) 2008 Elsevier Ltd. All rights reserved.

RF performance of a 418-MHz radio telemeter packaged for human vaginal placement

The electrical and communication performance of a 0.8-mu W UHF temperature telemeter designed for human vaginal placement is discussed; a solenoidal loop antenna was used, occupying a volume of 0.1 cm(3). In situ, measured power absorption was between 19-25 dB, resulting in an effective operating range of 10 m. Capacitive loading lowered the antenna's resonant frequency by 1.4% and there was a significant polarization change in the radiated output.

Novel low-temperature photocatalytic titania films produced by plasma-assisted reactive dc magnetron sputtering

Robust, active, anatase titania films, 250 nm thick, are deposited onto glass at low temperatures, i.e., 2.0 for the photocatalytic mineralization of stearic acid. These films are typically 6.9 times more active than a sample of commercial self-cleaning glass, comprising a 15 nm layer of fitania deposited by CVD, mainly because they are much thicker and, therefore, absorb more of the incident UV light. The most active of the films tested comprised particles of P25, but lacked any significant physical robustness. Similar results, but much more quickly obtained, were generated using a photocatalyst- sensitive ink, based on the redox dye, resazurin, Rz. All fitania films tested, including those produced by magnetrom sputtering exhibited photo-induced superhydrophilicity. The possible future application of PAR-DG-MS for producing very active photocatalytic films on substrates not renowned for their high temperature stabilities, such as plastics, is noted. (c) 2006 Elsevier B.V All rights reserved.

Heating modes in capacitively coupled RF plasmas observed with emission spectroscopy

It is demonstrated that spatio-temporally resolved emission studies of a capacitively coupled gaseous electronics conference reference cell discharge can be used to determine changes in the heating mechanisms in such discharges.