Selectivity studies of the benzene cis-dihydrodiol dehydrogenase enzyme from Pseudomonas putida ML2 with Vicinal diol substrates

The enantiopure (1S, 2S)-cis-dihydrodiol metabolites 2B-5B have been obtained in low yield from the corresponding monosubstituted halobenzene substrates 2A-5A, using a wild-type strain of Pseudomonas putida (ML2) containing benzene dioxygenase (BDO). Benzene cis-dihydrodiol dehydrogenase (BCD) from P. putida ML2 and naphthalene cis-dihydrodiol dehydrogenase (NCD) from P. putida 8859 were purified and used in a comparative study of the stereoselective biotransformation of cis-dihydrodiol enantiomers 2B-5B. The BCD and NCD enzymes were found to accept cis-dihydrodiol enantiomers of monosubstituted benzene cis-dihydrodiol substrates 2B-5B of opposite absolute configuration. The acyclic alkene 1,2-diols 10-17 were also found to be acceptable substrates for BCD.

Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations

This paper provides a comprehensive analysis of thermal resistance of trench isolated bipolar transistors on SOI substrates based on 3D electro-thermal simulations calibrated to experimental data. The impact of emitter length, width, spacing and number of emitter fingers on thermal resistance is analysed in detail. The results are used to design and optimise transistors with minimum thermal resistance and minimum transistor area. (c) 2007 Elsevier Ltd. All rights reserved.

Kinetic analysis of the cleavage of human protease-activated receptor-1/2/3 and 4 using quenched-fluorescent peptide substrates

Protease-activated receptors [PARs] are a family of G-protein-coupled seven-transmembrane domain receptors that are activated by proteolytic cleavage of their amino-terminal exodomain. To characterize the cleavage rate of human PAR-1 / 2 / 3 and 4 by trypsin and thrombin, four synthetic quenched-fluorescent peptide substrates have been synthesized. Each substrate consisted of a ten-residue peptide spanning the receptor activation cleavage site and using progress-curve kinetics, k(cat)/K-m values were determined.

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium (TEMAH) and water vapour as precursors in a modified Oxford Instruments PECVD system. Self-limiting monolayer growth has been verified, characterised by a growth rate of 0.082 nm/ cycle. Layer uniformity is approximately within ±1% of the mean value. MOS capacitors have been fabricated by evaporating aluminium electrodes. CV analysis has been used to determine the bulk and interface properties of the HfO 2, and their dependence on pre-clean schedule, deposition conditions and post-deposition annealing. The dielectric constant of the HfO 2 is typically 18. On silicon, best results are obtained when the HfO 2 is deposited on a chemically oxidised hydrophilic surface. On germanium, best results are obtained when the substrate is nitrided before HfO 2 deposition, using an in-situ nitrogen plasma treatment. © Springer Science+Business Media, LLC 2007.