Observation of reentrant spin glass behavior in LaCo0.5Ni0.5O3

The magnetic and transport properties of LaCo0.5Ni0.5O3 have been studied. The dc magnetization and the ac susceptibility studies suggest the presence of a magnetic-phase transition from a ferromagnetic (FM) to a spin glass phase at a low temperature. This type of reentrant spin-glass (RSG) behavior attached to a long-range ordered ferromagnet is observed in this system. A magnetoresistance of ~10% is observed at 5 K which is unsaturated up to 11 Tesla suggests the presence of antiferromagnetic (AFM) interactions. It is likely that the competition between such AFM interactions with FM interactions yield an RSG phase.

Reaction product of lime and silica from rice husk ash

Rice husk ash (about 95% silica) with known physical and chemical characteristics has been reacted with lime and water. The setting process for a lime-excess and a lime-deficient mixture has been investigated. The product of the reaction has been shown to be a calcium silicate hydrate, C-S-H(I)+ by a combination of thermal analysis, XRD and electron microscopy. Formation of C-S-H(I) accounts for the strength of lime-rice husk ash cement.

Ultrasonic velocities and thermal expansion coefficients of amorphous Se80Te20 and Se90Te10 alloys near glass transitions

Precise measurements of the ultrasonic velocities and thermal expansivities of amorphous Se80Te20 and Se90Te10 alloys are reported near the glass transition. The samples are produced by liquid quenching. The longitudinal and transverse velocities are measured at 10 MHz frequency using the McSkimin pulse superposition technique. The thermal expansivities,agr, are measured using a three-terminal capacitance bridge. Theagr-values show a sharp maximum near the glass transition temperature,T g. The ultrasonic velocities also show a large temperature derivative, dV/dT nearT g. The data are discussed in terms of existing theories of the glass transition. The continuous change inagr shows that the glass transition is not a first-order transition, as suggested by some theories. The samples are found to be deformed by small loads nearT g. The ultrasonic velocities and dV/dT have contributions arising from this deformation.

Pressure-induced polymorphous crystallization in bulk Si20Te80 glass

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.

Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass

An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.

Thermal decomposition of doped calcium hydroxide for chemical energy storage

Thermal decomposition of Ca(OH)2 with and without additives has been experimentally investigated for its application as a thermochemical energy storage system. The homogeneous reaction model gives a satisfactory fit for the kinetic data on pure and Ni(OH)2---, Zn(OH)2--- and Al(OH)3---doped Ca(OH)2 and the order of reaction is 0.76 in all cases except for the Al(OH)3-doped sample for which the decomposition is zero order. These additives are shown not only to enhance the reaction rate but also to reduce the decomposition temperature significantly. Some models for solid decomposition reactions, and possible mechanisms in the decomposition of solids containing additives, are also discussed.

Silica from rice husk through thermal decomposition

The thermal decomposition characteristics of rice husk have been investigated by dynamic thermoanalytical techniques: DTA, TG, DTG and isothermal heating. The observed thermal behaviour is explained on the basis of a superposition of the decomposition of cellulose and lignin, which are the major organic constituents of rice husk. Morphological features of silica in husk as well as the ash are examined by scanning electron microscopy. Silica in the residual ash has been characterised by X-ray diffraction and infrared spectroscopy. Controlled thermal decomposition of rice husk has been shown to be a convenient method for the liberation of silica.

EPR studies on donor doped BaTiO3 grain boundary layer ceramic dielectrics

Donor doped BaTiO3 ceramics become insulating5 under controlled conditions with effective dielectric constants >10. The changes in EPR signals indicate that a certain fraction of the donor doped BaTiO3 is cubic even at room temperature and that the cubic fraction increases with the donor content. X-ray powder diffraction data support the EPR results. The coexistence of both the phases over a range of temperature is characteristic of diffused phase transition. The effect of grain size variation on EPR signal intensities indicate that the boundary layers surrounding the grains may constitute the cubic phase as a result of higher Ba-vacancies and donor contents at the grain boundary layer than in the bulk. Since the acceptor states arising from the Ba-vacancies and the impurities are activated in the cubic phase, they capture electrons from the conduction band, rendering the cubic phase electrically more insulating than the semiconductive tetragonal grain interiors. Thus, the cubic grain boundary layers act as effective dielectric media where the field tends to concentrate.

Behaviour of ultrasonic velocities in amorphous Se90Ge10 and Se85Ge15 alloys near their glass transition

Precise measurements of 10 MHz frequency longitudinal and shear wave velocities are reported in amorphous SeGe alloys near their glass transition temperature T g . There is a sharp decrease of the velocities near T g , but the reduction in velocities appears smaller than expected.

Ultrasonic velocities and thermal expansion coefficients of amorphous Se80Te20 and Se90Te10 alloys near glass transitions

Precise measurements of the ultrasonic velocities and thermal expansivities of amorphous Se80Te20 and Se90Te10 alloys are reported near the glass transition. The samples are produced by liquid quenching. The longitudinal and transverse velocities are measured at 10 MHz frequency using the McSkimin pulse superposition technique. The thermal expansivities,agr, are measured using a three-terminal capacitance bridge. Theagr-values show a sharp maximum near the glass transition temperature,T g. The ultrasonic velocities also show a large temperature derivative, dV/dT nearT g. The data are discussed in terms of existing theories of the glass transition. The continuous change inagr shows that the glass transition is not a first-order transition, as suggested by some theories. The samples are found to be deformed by small loads nearT g. The ultrasonic velocities and dV/dT have contributions arising from this deformation.

Dispersion of the stress-optic coefficient in glasses

The stress-optic coefficient (n3/2)(q11-q12) has been determined for a series of 18 optical glasses of different compositions in the wavelength range 5700-3200 Å. The coefficients are negative for all the glasses except for a high-lead-content glass of density 6·7 and refractive index 1·89. The numerical value of the coefficient decreases as one proceeds to the ultraviolet. This behaviour is just the opposite of what is observed in fused silica. By applying Mueller's theory, the strain polarizability constant and its dispersion have been evaluated.

Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure

Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.

Electron spin resonance study of copper(II) doped ferroelectric ammonium sulphate

Single crystal electron spin resonance studies of Cu2+ doped ferroelectric ammonium sulphate ((NH4)2SO4, Tc = 223 K) are reported at 300 and 77 K. The Cu2+ ion is found to enter the lattice interstitially with a trigonal bipyramidal coordination. Proton superhyperfine interaction is found for magnetic field directions close to the a-axis. Changes are observed in the 77 K recordings indicating a distortion of the trigonal bipyramid consistent with crystal structure data. An increase of the proton superhyperfine constant in the ferroelectric phase is indicative of stronger hydrogen bonding. The Cu2+ ion doped as an impurity in a trigonal bipyramid environment in a diamagnetic host lattice is reported for the first time.

Itinerant electron ferromagnetism in Sr2+-, Ca2+-, and Ba2+-doped rare-earth orthocobaltites (Ln3+1�xM2+xCoO3)

Electronic and magnetic properties of Ln1�xSrxCoO3 (Ln = Pr, Nd, Sm, Eu, and Gd) systems show that above a critical value of x, the d electrons become itinerant while the materials become ferromagnetic at low temperatures. The ferromagnetic component increases with increase in x and decrease in temperature. The Curie temperature increases with x and decreases with decrease in the size of the rare-earth ion. Incorporation of Ba2+ in LaCoO3 favors itinerant electron ferromagnetism relative to Sr2+ while Ca2+ is less favorable than Sr2+.