Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass


Autoria(s): Parthasarathy, G; Bandyopadhyay, AK; Asokan, S; Gopal, ESR
Data(s)

01/07/1984

Resumo

An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/22866/1/12.pdf

Parthasarathy, G and Bandyopadhyay, AK and Asokan, S and Gopal, ESR (1984) Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass. In: Solid State Communications, 51 (4). pp. 195-197.

Publicador

Elsevier Science

Relação

http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVW-46TYS9M-10X&_user=512776&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=a652c83243807ad5f99a815a6fa80122

http://eprints.iisc.ernet.in/22866/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed