MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

A Novel VSI- and CSI-Fed Dual Stator Induction Motor Drive Topology for Medium-Voltage Drive Applications

A new configuration is proposed for high-power induction motor drives. The induction machine is provided with two three-phase stator windings with their axes in line. One winding is designed for higher voltage and is meant to handle the main (active) power. The second winding is designed for lower voltage and is meant to carry the excitation (reactive) power. The excitation winding is powered by an insulated-gate-bipolar-transistor-based voltage source inverter with an output filter. The power winding is fed by a load-commutated current source inverter. The commutation of thyristors in the load-commutated inverter (LCI) is achieved by injecting the required leading reactive power from the excitation inverter. The MMF harmonics due to the LCI current are also cancelled out by injecting a suitable compensating component from the excitation inverter, so that the electromagnetic torque of the machine is smooth. Results from a prototype drive are presented to demonstrate the concept.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.

A mostly-digital analog scan-out chain for low bandwidth voltage measurement for analog IP test

A method of precise measurement of on-chip analog voltages in a mostly-digital manner, with minimal overhead, is presented. A pair of clock signals is routed to the node of an analog voltage. This analog voltage controls the delay between this pair of clock signals, which is then measured in an all-digital manner using the technique of sub-sampling. This sub-sampling technique, having measurement time and accuracy trade-off, is well suited for low bandwidth signals. This concept is validated by designing delay cells, using current starved inverters in UMC 130nm CMOS process. Sub-mV accuracy is demonstrated for a measurement time of few seconds.

Non-Thermal Plasma Applications at Very Low Temperature

Application of non-thermal plasma for gas cleaning is gaining prominence in the recent years. Normally, the gas treatment was carried out at or above room temperature, by the dry type plasma reactor. However, this treatment is still inadequate in the removal of certain stable gases present in the flue gas mixture. We propose the non-thermal plasma process at very low temperature, and report here some interesting results of treatment of NO or N2O with pulsed plasma below — 100°C ambient temperature. Direct methanol synthesis from CH4 and CO2 at very low temperature is also reported. A comparative analysis of the various tests are presented together with a note on the energy consideration

Non-thermal plasma applications at Very Low Temperature

Application of non-thermal plasma for gas cleaning is gaining prominence in the recent years. Normally, the gas treatment was carried out at or above room temperature, by the dry type plasma reactor. However, this treatment is still inadequate in the removal of certain stable gases present in the flue gas mixture. We propose the non-thermal plasma process at very low temperature, and report here some interesting results of treatment of NO or N2O with pulsed plasma below — 100°C ambient temperature. Direct methanol synthesis from CH4 and CO2 at very low temperature is also reported. A comparative analysis of the various tests are presented together with a note on the energy consideration

Optimal static voltage stability improvement using a numerically stable SLP algorithm, for real time applications

A numerically stable sequential Primal–Dual LP algorithm for the reactive power optimisation (RPO) is presented in this article. The algorithm minimises the voltage stability index C 2 [1] of all the load buses to improve the system static voltage stability. Real time requirements such as numerical stability, identification of the most effective subset of controllers for curtailing the number of controllers and their movement can be handled effectively by the proposed algorithm. The algorithm has a natural characteristic of selecting the most effective subset of controllers (and hence curtailing insignificant controllers) for improving the objective. Comparison with transmission loss minimisation objective indicates that the most effective subset of controllers and their solution identified by the static voltage stability improvement objective is not the same as that of the transmission loss minimisation objective. The proposed algorithm is suitable for real time application for the improvement of the system static voltage stability.

Acenaphtho[1,2-b]quinoxaline based low band gap copolymers for organic thin film transistor applications

We report the synthesis of a novel class of low band gap copolymers based on anacenaphtho[1,2-b]quinoxaline core and oligothiophene derivatives acting as the acceptor and the donor moieties, respectively. The optical properties of the copolymers were characterized by ultraviolet-visible spectroscopy while the electrochemical properties were determined by cyclic voltammetry. The band gap of these polymers was found to be in the range 1.8-2.0 eV as calculated from the optical absorption band edge. X-ray diffraction measurements show weak pi-pi stacking interactions between the polymer chains. The hole mobility of the copolymers was evaluated using field-effect transistor measurements yielding values in the range 10(-5)-10(-3) cm(2)/Vs.

A Hybrid Five-Level Inverter With Common-Mode Voltage Elimination Having Single Voltage Source for IM Drive Applications

A new hybrid five-level inverter topology with common-mode voltage (CMV) elimination for induction motor drive is proposed in this paper. This topology has only one dc source, and different voltage levels are generated by using this voltage source along with floating capacitors charged to asymmetrical voltage levels. The pulsewidth modulation (PWM) scheme employed in this topology balances the capacitor voltages at the required levels at any power factor and modulation index while eliminating the CMV. This inverter has good fault-tolerant capability as it can be operated in three-or two-level mode with CMV elimination, in case of any failure in the H-bridges. More voltage levels with CMV elimination can be realized from this topology but only in a limited range of modulation index and power factor. Extensive simulation is done to validate the PWM technique for CMV elimination and balancing of the capacitor voltages. The experimental verification of the proposed inverter-fed induction motor is carried out in the linear modulation and overmodulation regions. The steady-state and transient operations of the drive are verified. The dynamics of the capacitor voltage balancing is also tested. The experimental results demonstrate that the proposed topology can be considered for industrial drive applications.

MEMS based microactuator for microjet applications

The objective of this work is to confirm the possibility of utilization of PolyVinyliDeneFlouride (PVDF) films in MEMS based microactuator for microjet applications. A membrane type microactuator is designed, developed, packaged and tested. The microactuator consists of PVDF film attached to thin Silicon diaphragm. As the voltage difference is applied across it, due to the piezoelectric behaviour, it deforms primarily in d31 mode, which in turn deflects the diaphragm. Using finite element methods, coupled field analysis is carried out to optimize the dimensions of the actuator with respect to the output force and input voltage. A cavity with a square diaphragm of 1mm×1mm×5μm is realized using standard microfabrication technique. 50μm thick PVDF film, cut with special dicing saw, is glued inside the metalized cavity using low stress, conductive, room temperature cured epoxy. The 3mm×3mm×0.675mm actuator die is packaged using Chip-On-Board technique in conjunction with low temperature soldering for taking the connections. The micro-actuator is tested in both actuation and sensing mode. The developed actuator is proposed to use with micro nozzle to study the utilization in drug delivery system.

Low order anti-aliasing filters for sparse signals in embedded applications

Major emphasis, in compressed sensing (CS) research, has been on the acquisition of sub-Nyquist number of samples of a signal that has a sparse representation on some tight frame or an orthogonal basis, and subsequent reconstruction of the original signal using a plethora of recovery algorithms. In this paper, we present compressed sensing data acquisition from a different perspective, wherein a set of signals are reconstructed at a sampling rate which is a multiple of the sampling rate of the ADCs that are used to measure the signals. We illustrate how this can facilitate usage of anti-aliasing filters with relaxed frequency specifications and, consequently, of lower order.