Investigation of Surface Grooves from Migrating Grain Boundaries

Visible-light microscopy (VLM) and atomic-force microscopy (AFM) were used to study the progression of grain-boundary grooving and migration in high-purity alumina (Lucalox™). Groove profiles from the same grain boundaries were revisited using AFM following successive heat-treatments. The grooves measured from migrating grain boundaries were found to have asymmetric partial-angles compared to those measured from boundaries that did not migrate during the experiment. For a moving boundary, the grain with the larger partial-angle was consistently found to grow into the grain with the smaller partial-angle. Migrating boundaries were observed to leave behind remnant thermal grooves. The observations indicate that the boundary may be bowing out during the migration process.

The influence of grain size on deformation of copper

It is well know that grain boundaries enhance strength at low temperatures by acting as obstacles to dislocation motion, and they retard strength at higher temperatures by processes involving grain boundary sliding. The available data on the influence of grain boundaries on deformation in copper is summarized. Equi-channel angular extrusion offers a convenient means for imposing severe plastic deformation to refine the grain size in bulk materials. Experimental data on fine grained copper produced by equi-channel angular extrusion will be described, and the implications of the data for diffusion creep and superplasticity will be discussed.

Grain-Size Effects on the High-Temperature Oxidation of Modified 304 Austenitic Stainless Steel

The high-temperature oxidation behavior of modified 304 austenitic stainless steels in a water vapor atmosphere was investigated. Samples were prepared by various thermo mechanical treatments to result in different grain sizes in the range 8-30 mu m. Similar I 3 pound grain boundary fraction was achieved to eliminate any grain-boundary characteristics effect. Samples were oxidized in an air furnace at 700 A degrees C with 20 % water vapor atmosphere. On the fine-grained sample, a uniform Cr2O3 layer was formed, which increased the overall oxidation resistance. Whereas on the coarse-grained sample, an additional Fe2O3 layer formed on the Cr-rich oxide layer, which resulted in a relatively high oxidation rate. In the fine-grained sample, grain boundaries act as rapid diffusion paths for Cr and provided enough Cr to form Cr2O3 oxide on the entire sample surface.

Creep in nanocrystalline zirconia

Grain boundary sliding remains a dominant deformation process during creep in both nanocrystalline and submicron-grained zirconia. The level of segregation of Y to grain boundaries is reduced by a factor of similar to 2 in nanocrystals. However, a scaling relationship for compression creep was valid in a 3 mol.% yttria-stabilized tetragonal zirconia with grain sizes in the range of similar to 65-400 nm, indicating the same deformation mechanism over this range of grain sizes. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Observation of magnetically hard grain boundaries in double-perovskite Sr2FeMoO6

Unusual low-temperature magneto-resistance (MR) of ferromagnetic Sr2FeMoO6 polycrystals has been attributed to magnetically hard grain boundaries which act as spin valves. We detected the different magnetic hysteresis curves for the grains and the grain boundaries of polycrystalline Sr2FeMoO6 by utilizing the different probing depths of the different detection modes of x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), namely, the total electron yield (TEY) mode (probing depth similar to 5 nm) and the total fluorescence yield (TFY) mode (probing depth similar to 100 nm). At 20 K, the magnetic coercivity detected in the TEY mode (H-c,H- TEY) was several times larger than that in the TFY mode (H-c,H- TFY), indicating harder ferromagnetism of the grain boundaries than that of the grains. At room temperature, the grain boundary magnetism became soft and H-c,H- TEY and H-c,H- TFY were nearly the same. From the line-shape analysis of the XAS and XMCD spectra, we found that in the grain boundary region the ferromagnetic component is dominated by Fe2+ or well-screened signals, while the non-magnetic component is dominated by Fe3+ or poorly screened signals. Copyright (C) EPLA, 2014

Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry

We report the direct observation of electrochemical potential and local transport field variations near scatterers like grain boundaries, triple points, and voids in thin platinum films studied by scanning tunneling potentiometry. The field is highest at a void, followed by a triple point and a grain boundary. The local transport field near a void can even be four orders of magnitude higher than the macroscopic field, indicating that the void is the most likely place for an electromigration induced failure. The field build up for a particular type of scatterer depends on the grain connectivity. We estimate an average grain boundary reflection coefficient for the film from the temperature dependence of its resistivity.

Colossal dielectric behavior of semiconducting Sr2TiMnO6 ceramics

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as similar to 10(5) in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.

Colossal dielectric behavior of semiconducting $Sr_{2}TiMnO_{6}$ ceramics

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as similar to 10(5) in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.

Carrier mobility in polycrystalline semiconductors

This letter presents a modified version of the grain boundary barrier model for polycrystalline semiconductors which takes into account the carrier transport in the bulk of the grain and the dynamic process of capture and release of free carriers by the grain boundary traps.

A Method for the Deposition of Transparent Conducting Thin-Films of Tin Oxide

A modified method has been developed for the deposition of transparent semiconducting thin films of tin oxide, involving the chemical vapour phase oxidation of tin iodide. These films show sheet resistances greater than 100 Ω/□ and an average optical transmission in the visible range exceeding 80%. The method avoids uncontrolled contamination, resulting in better reproducibility of the films. The films showed direct and indirect transitions and the possibility of an indirect forbidden transition. X-ray diffraction studies reveal that the films are polycrystalline. The low mobility values of the films have been attributed to the grain boundary scattering effect.

Depth profile composition studies of thin film CdS: Cu,S solar cells using XPS and AES

Surface composition and depth profile studies of hemiplated thin film CdS:CuzS solar cells have been carried out using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) techniques. These studies indicate that the junction is fairly diffused in the as-prepared cell. However, heat treatment of the cell at 210°C in air relatively sharpens the junction and improves the cell performance. Using the Cu(2p3p)/S(2p) ratio as well as the Cu(LVV)/(LMM) Auger intensity ratio, it can be inferred that the nominal valency of copper in the layers above the junction is Cut and it is essentially in the CUSS form. Copper signals are observed from layers deep down in the cell. These seem to appear mostly from the grain boundary region. From the observed concentration of Cd, Cu and S in these deeper layers and the Cu(LVV)/(LMM) ratio it appears that the signals from copper essentially originate partly from copper in CuS and partly from Cu2t trapped in the lattice. It is significant to note that the nominal valence state of copper changes rather abruptly from Cut to Cuz+ across the junction.

Deformation mechanisms during large strain deformation of nanocrystalline nickel

In this letter, a conclusive evidence of the operation of planar slip along with grain boundary mediated mechanisms has been reported during large strain deformation of nanocrystalline nickel. Dislocation annihilation mechanism such as mechanical recovery has been found to play an important role during the course of deformation. The evidences rely on x-ray based techniques, such as dislocation density determination and crystallographic texture measurement as well as microstructural observation by electron microscopy. The characteristic texture evolution in this case is an indication of normal slip mediated plasticity in nanocrystalline nickel.

Minority-Carrier Lifetime In Polycrystalline Semiconductors

A model is described for grain boundary recombination in polycrystalline semiconductors. This model enables the evaluation of minority carrier lifetime in these materials. Es vvird ein Modell fur die Korngrenzenrekombination in polykristallinen Halbleitern beschrieben. Das Modell ermoglicht die Bestimmung der Minoritiitsladungstragerlebensdauer in diesen Materialien.

Impression creep of zinc and the rate-controlling dislocation mechanism of plastic flow at high temperatures

The impression creep behaviour of zinc is studied in the range 300 to 500 K and the results are compared with the data from conventional creep tests. The steady-state impression velocity is found to exhibit the same stress and temperature dependence as in conventional tensile creep with the same power law stress exponent. Also studied is the effect of indenter size on the impression velocity. The thermal activation parameters for plastic flow at high temperatures derived from a number of testing techniques agree reasonably well. Grain boundary sliding is shown to be unimportant in controlling the rate of plastic flow at high temperatures. It is observed that the Cottrell-Stokes law is obeyed during high-temperature deformation of zinc. It is concluded that a mechanism such as forest intersection involving attractive trees controls the high-temperature flow rather than a diffusion mechanism.

K-Ar ages of biotite and muscovite from Pangong metamorphic complex, Shyok suture zone, India: Implications for the youngest post-collision metamorphic event in Ladakh Himalaya

The garnet-kyanite-staurolite and garnet-biotite-staurolite gneisses were collected from a locality within Lukung area that belongs to the Pangong metamorphic complex in Shyok valley, Ladakh Himalaya. The kyanite-free samples have garnet and staurolite in equilibrium, where garnets show euhedral texture and have flat compositional profile. On the other hand, the kyanite-bearing sample shows equilibrium assemblage of garnet-kyanite-staurolite along with muscovite and biotite. In this case, garnet has an inclusion rich core with a distinct grain boundary, which was later overgrown by inclusion free euhedral garnet. Garnet cores are rich in Mn and Ca, while the rims are poor in Mn and rich in Fe and Mg, suggesting two distinct generations of growth. However, the compositional profiles and textural signature of garnets suggests the same stage of P -T evolution for the formation of the inclusion free euhedral garnets in the kyanite-free gneisses and the inclusion free euhedral garnet rims in the kyanite-bearing gneiss. Muscovites from the four samples have consistent K-Ar ages, suggesting the cooling age (∼ 10 Ma) of the gneisses. These ages make a constraint on the timing of the youngest post-collision metamorphic event that may be closely related to an activation of the Karakoram fault in Pangong metamorphic complex.