Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry


Autoria(s): Ramaswamy, Geetha; Raychaudhuri, AK
Data(s)

27/09/1999

Resumo

We report the direct observation of electrochemical potential and local transport field variations near scatterers like grain boundaries, triple points, and voids in thin platinum films studied by scanning tunneling potentiometry. The field is highest at a void, followed by a triple point and a grain boundary. The local transport field near a void can even be four orders of magnitude higher than the macroscopic field, indicating that the void is the most likely place for an electromigration induced failure. The field build up for a particular type of scatterer depends on the grain connectivity. We estimate an average grain boundary reflection coefficient for the film from the temperature dependence of its resistivity.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/19458/1/GetPDFServlet.pdf

Ramaswamy, Geetha and Raychaudhuri, AK (1999) Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry. In: Applied Physics Letters, 75 (13). pp. 1982-1984.

Publicador

American Institute of Physics

Relação

http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000075000013001982000001&idtype=cvips&gifs=yes

http://eprints.iisc.ernet.in/19458/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed