Minority-Carrier Lifetime In Polycrystalline Semiconductors
| Data(s) |
1983
|
|---|---|
| Resumo |
A model is described for grain boundary recombination in polycrystalline semiconductors. This model enables the evaluation of minority carrier lifetime in these materials. Es vvird ein Modell fur die Korngrenzenrekombination in polykristallinen Halbleitern beschrieben. Das Modell ermoglicht die Bestimmung der Minoritiitsladungstragerlebensdauer in diesen Materialien. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/21392/1/m3.pdf Kumar, KR and Satyam, M (1983) Minority-Carrier Lifetime In Polycrystalline Semiconductors. In: Physica Status Solidi A, 77 (2). pp. 467-470. |
| Publicador |
John Wiley and Sons |
| Relação |
http://www3.interscience.wiley.com/cgi-bin/fulltext/112443906/PDFSTART http://eprints.iisc.ernet.in/21392/ |
| Palavras-Chave | #Electrical Communication Engineering |
| Tipo |
Journal Article PeerReviewed |
