Carrier mobility in polycrystalline semiconductors
| Data(s) |
18/09/1981
|
|---|---|
| Resumo |
This letter presents a modified version of the grain boundary barrier model for polycrystalline semiconductors which takes into account the carrier transport in the bulk of the grain and the dynamic process of capture and release of free carriers by the grain boundary traps. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/20147/1/shashi.pdf Ram Kumar, K and Satyam, M (1981) Carrier mobility in polycrystalline semiconductors. In: Applied Physics Letters, 39 (11). pp. 898-900. |
| Publicador |
American Institute of Physics |
| Relação |
http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000039000011000898000001&idtype=cvips&prog=normal http://eprints.iisc.ernet.in/20147/ |
| Palavras-Chave | #Electrical Communication Engineering |
| Tipo |
Journal Article PeerReviewed |
