Influence of substrate temperature and post-deposition heat treatment on the optical properties of SiO2 films

Silicon dioxide films are extensively used as protective, barrier and also low index films in multilayer optical devices. In this paper, the optical properties of electron beam evaporated SiO2 films, including absorption in the UV, visible and IR regions, are reported as a function of substrate temperature and post-deposition heat treatment. A comparative study of the optical properties of SiO2 films deposited in neutral and ionized oxygen is also made.

Solvation of an ion and of a dipole in a dipolar liquid: How different are the dynamics

Theoretical expressions for the time-dependent solvation energy of an ion and of a dipole in a dense dipolar liquid are derived from microscopic considerations. We show that in contradiction to the prediction of the continuum models, the dynamics of these two species are significantly different from each other. Especially, the zero wavevector contribution, which is significant for ions, is totally absent for dipoles. Dipolar solvation may be profoundly influenced by the translational modes of the host solvent.

On superconducting Y-Ba-Cu-O films prepared by printing on lumina substrates

This Letter attempts to examine the impact of the chemical interaction of the alumina substrate on the Y-Ba-Cu-O film deposited on it.

Activities, concentration fluctuations and complexing in liquid Ca-Al alloys

Détermination de l'activité du calcium par la méthode d'effusion de Knudsen. Calcul, à partir de la distribution mesurée pour l'aluminium entre l'alliage et du fer pur, de l'activité de l'aluminium dans des alliages riches en calcium. Détermination en combinant les deux méthodes, des activités des deux composants et de l'énergie de Gibbs de mélange pour tout le domaine de composition. Calcul et analyse du facteur de structure concentration-concentration

A kinetic study of liquid-phase catalytic oxidation of styrene to benzaldehyde with Wilkinson complex

Liquid-phase homogeneous catalytic oxidation of styrene with Wilkinson complex by molecular oxygen in toluene medium gave selectively benzaldehyde and formaldehyde as the primary products. Higher temperatures and styrene conversions eventually led to acid formation due to co-oxidation of aldehyde.A reaction induction period and an initiation period, typical of free-radical reactions, characterized the oxidation process. The effects of temperature and catalyst and styrene concentrations on the conversion of styrene to benzaldehyde and acid formation have been studied. The optimum reaction parameters have been determined as a styrene-to-solvent mole ratio of 0.5, a catalyst-to-styrene mole ratio of 5.0 X lo4, and a reaction temperature of 75 "C. A reaction scheme based upon free-radical mechanism yielded a pseudo-first-order model which agreed well with the observed kinetic data in the absence of co-oxidation of aldehyde. A second-order model was found to fit the experimental data better in the case of aldehyde conversion to acid.

Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500 degrees C. Ferroelectricity in Zn1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (T-c) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at T-c is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (P-s) and coercive field (E-c) of 0.6 mu C/cm(2) and 45 kV/cm were obtained for Zn0.85Li0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

Synthesis and characterisation of co-evaporated tin sulphide thin films

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 mu m. The films showed an electrical resistivity of 6.1 Omega cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (> 10(4) cm(-1)) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

Field induced spin reorientation transition in epitaxial La0.5Sr0.5CoO3 films

Strained epitaxial La0.5Sr0.5CoO3 films are grown on LaAlO3 substrate. Structural, electrical,and magnetic measurements were carried out. Out of plane lattice parameter of the film undergoes compressive strain and the coercivity is enhanced. The zero field cooled (ZFC) magnetization curve for a field applied parallel to the film plane shows a jump, which suggests a spin reorientation transition (SRT), while ZFC magnetization for a field applied perpendicular to the film plane is featureless. This jump in magnetization is shifted to higher temperatures when the magnetic field is reduced. The SRT is attributed to the strain in the film. (C) 2010 Elsevier B.V. All rights reserved.

Giant planar Hall effect in pulsed laser deposited permalloy films

Ni80Fe20 thin films with high orientation were grown on Si(1 0 0) using pulsed laser ablation. The anisotropic magnetoresistance (AMR) and the planar Hall measurements show a 2.5% resistance anisotropy and a 45% planar Hall voltage change for magnetic field sweep of 10 Oe. The planar Hall sensitivity dR/dH was found to be 900 Omega T-1 compared with a previously reported maximum of 340 Omega T-1 in the same system.Also these films are found to withstand repeated thermal cycling up to 110 degrees C and the Hall sensitivity remains constant within this temperature range. This combination of properties makes the system highly suitable for low magnetic field sensors, particularly in geomagnetic and biosensor applications. To elucidate this, we have demonstrated that these sensors are sensitive to Earth's magnetic field. These results are compared with the sputter deposited films which have a very low AMR and planar Hall voltage change as compared with the films grown by PLD. The possible reasons for these contrasting characteristics are also discussed.

Effect of surfactants on drop breakage in turbulent liquid dispersions

The existingm odels of drop breakage in stirred dispersions grossly overpredict the maximum drop size when surface active agents are present inspite of using the lowered value of interfacial tension. It is shown that the difference in the values of dynamic and static interfacial tension, aids the turbulent stresses in drop breakage. When the difference is zero, e.g. for pure liquids and for high concentration of surfactants, the influence of the addition of surfactant is merely to reduce the interfacial tension and can be accounted for by existingm odels. A modified model has been developed, where the drop breakage is assumed to be represented by a Voigt element. The deforming stresses are due to turbulence and the difference between dynamic and static interfacial tensions. The resisting stresses arise due to interfacial tension and the viscous flow inside the drop. The model yields the existing expressions for dmax as special cases. The model has been found to be satisfactory when tested against experimental results using the styrene-water-teepol system.

Freezing of a colloidal liquid subject to shear flow

A nonequilibrium generalization of the density-functional theory of freezing is proposed to investigate the shear-induced first-order phase transition in colloidal suspensions. It is assumed that the main effect of a steady shear is to break the symmetry of the structure factor of the liquid and that for small shear rate, the phenomenon of a shear-induced order-disorder transition may be viewed as an equilibrium phase transition. The theory predicts that the effective density at which freezing takes place increases with shear rate. The solid (which is assumed to be a bcc lattice) formed upon freezing is distorted and specifically there is less order in one plane compared with the order in the other two perpendicular planes. It is shown that there exists a critical shear rate above which the colloidal liquid does not undergo a transition to an ordered (or partially ordered) state no matter how large the density is. Conversely, above the critical shear rate an initially formed bcc solid always melts into an amorphous or liquidlike state. Several of these predictions are in qualitative agreement with the light-scattering experiments of Ackerson and Clark. The limitations as well as possible extensions of the theory are also discussed.

Microstructure related influence on the electrical properties of pulsed laser ablated (Ba, Sr)TiO3 thin films

The microstructural dependence of electrical properties of (Ba, Sr)TiO3(BST) thin films were studied from the viewpoint of dc and ac electrical properties. The films were grown using a pulsed laser deposition technique in a temperature range of 300 to 600 degrees C, inducing changes in grain size, structure, and morphology. Consequently, two different types of films were realized, of which type I, was polycrystalline, multigrained, while type II was [100] oriented possessing a densely packed fibrous microstructure. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. The results revealed a contribution from both electronic and ionic conduction. In the case of type I films, two trapping levels were identified with energies around 0.5 and 2.73 eV, which possibly originate from oxygen vacancies V-O and Ti3+ centers, respectively. These levels act as shallow and deep traps and are reflected in the current-voltage characteristics of the BST thin films. The activation energy associated with oxygen vacancy motion in this case was obtained as 1.28 eV. On the contrary, type II films showed no evidence of deep trap energy levels, while the identified activation energy associated with shallow traps was obtained as 0.38 eV. The activation energy obtained for oxygen vacancy motion in type II films was around 1.02 eV. The dc measurement results were further elucidated through ac impedance analysis, which revealed a grain boundary dominated response in type I in comparison to type II films where grain response is highlighted. A comparison of the mean relaxation time of the two films revealed three orders of magnitude higher relaxation time in the case of type I films. Due to smaller grain size in type I films the grains were considered to be completely depleted giving rise to only grain boundary response for the bulk of the film. The activation energy obtained from conductivity plots agree very well with that of dc measurements giving values 1.3 and 1.07 eV for type I and type II films, respectively. Since oxygen vacancy transport have been identified as the origin of resistance degradation in BST thin films, type I films with their higher value of activation energy for oxygen ion mobility explains the improvement in breakdown characteristics under constant high dc field stress. The role of microstructure in controlling the rate of degradation is found useful in this instance to enhance the film properties under high electric field stresses. (C) 2000 American Institute of Physics. [S0021-8979(00)00418-7].

High contrast laser writing in insitu textured germanium films via a novel chemical oxide formation

A high contrast laser writing technique based on laser induced efficient chemical oxidation in insitu textured Ge films is demonstrated. Free running Nd-YAG laser pulses are used for irradiating the films. The irradiation effects have been characterised using optical microscopy, electron spectroscopy and microdensitometry. The mechanism for the observed contrast has been identified as due to formation of GeO2 phase upon laser irradiation using X-ray initiated Auger spectroscopy (XAES) and X-ray photoelectron spectroscopy (XPS). The contrast in the present films is found to be nearly five times more than that known due to GeO phase formation in similar films.

Liquid Limit Of Kaolinitic Soils

This paper elucidates the relative importance of soil structure and various compositional factors in influencing the liquid limit of natural kaolinitic soils. Earlier studies dealt with purified systems and anticipated that the liquid limit of the soils would increase with percentage clay size fraction and surface area, and that soils with a greater degree of paricle flocculation would possess a higher liquid limit than soils with a more parallel particle arrangement. The results revealed that the inter-particle attraction and repulsion forces have a prominent role in determining the liquid limit of kaolinitic soils. These forces determine the particle arrangement (clay fabric) which in turn regulates the liquid limit values. The influence of clay fabric was ascertained from the relationships of liquid limit with shrinkage limit and sediment volume (in water) values. It was anticipated that kaolinitic soils with a greater degree of particle flocculatin and a higher liquid limit would shrink less and occupy a higher sedimentation volume. As expected an increase in liquid limit was accompanied by an increase in shrinkage limit and sediment volume in water.