construction of feature-matching perception in virtual assembly

An important characteristic of virtual assembly is interaction. Traditional di-rect manipulation in virtual assembly relies on dynamic collision detection, which is very time-consuming and even impossible in desktop virtual assembly environment. Feature-matching isa critical process in harmonious virtual assembly, and is the premise of assembly constraint sens-ing. This paper puts forward an active object-based feature-matching perception mechanism and afeature-matching interactive computing process, both of which make the direct manipulation in vir-tual assembly break away from collision detection. They also help to enhance virtual environmentunderstandability of user intention and promote interaction performance. Experimental resultsshow that this perception mechanism can ensure that users achieve real-time direct manipulationin desktop virtual environment.

面向虚拟装配的三维交互平台

针对当前装配领域的特点 ,提出一个面向虚拟装配的三维交互平台 (Virtual Assem bly Toolkit,VAT) .VAT中包含了新的三维交互思想 ,定义了装配领域中常用的三维交互原语 ,设计和实现了交互原语的捕获、解释和处理框架 .同时 ,VAT封装了三维图形构造、零件间的约束和碰撞检测等功能 .VAT可以大大简化虚拟装配应用的构造 ,便于应用的快速生成

实物界面下的虚拟装配

基于增强现实技术,将实物用户界面应用到虚拟装配系统中,在单摄像头的条件下,将虚拟零件模型加载至实物标记上,用户通过操作实物标记来控制虚拟模型,完成装配过程。相比于传统的虚拟装配交互方式,增强了用户操作的切实感。根据装配任务需求设计了4类实物标记。提出了3种交互技术,包括接近性原理,匹配约束信息提示与判定,以及视点控制等,并且结合碰撞检测来实现精确而又自然的虚拟装配。该系统可以帮助设计人员方便地对产品设计进行分析和改进,降低用户的学习难度。

Pressure Controlled Self-Assembly of High Quality Three-Dimensional Colloidal Photonic Crystals

A concise pressure controlled isothermal heating vertical deposition (PCIHVD) method is developed, which provides an optimal growing condition with better stability and reproducibility for fabricating photonic crystals (PCs) without the limitation of colloidal sphere materials and sizes. High quality PCs are fabricated with PCIHVD from polystyrene spheres with diameters ranging from 200 nm to 1 mu m. The deep photonic band gap and steep photonic band edge of the samples are most favorable for realizing ultrafast optical devices, photonic chips, and communications. This method makes a meaningful advance in the quality and diversity of PCs and greatly promotes their wide applications.

Validation of component assembly model and extension to plasticity

Material potential energy is well approximated by '' pair-functional '' potentials. During calculating potential energy, the orientational and volumetric components have been derived from pair potentials and embedding energy, respectively. Slip results in plastic deformation, and slip component has been proposed accordingly. Material is treated as a component assembly, and its elastic, plastic and damage properties are reflected by different components respectively. Material constitutive relations are formed by means of assembling these three kinds of components. Anisotropy has been incorporated intrinsically via the concept of component. Theoretical and numerical results indicate that this method has the capacity of reproducing some results satisfactorily, with the advantages of physical explicitness, etc. (c) 2007 Elsevier Ltd. All rights reserved.

国际理论和应用力学联合会全代会(IUTAM General Assembly)会议简介

<正> 1国际理论和应用力学联合会全代会的介绍 国际理论和应用力学联合会(IUTAM)全代会(Gen-eral Assembly)是全世界力学界的最高组织IUTAM的最高权力机构.全代会按照IUTAM诸参加国的等级(分5等)来划分代表名额.只有美国、日本等国由于交纳最高等级的会费而拥有5个代表名额,而我国在代表大会中有4位代表(郑哲敏,何友声,白以龙和杨卫).此外,在决策IUTAM

Processing Simulation of Virtual Manufacture in Laser Surface Treatmenthang

Processing simulation is at the bottom of the coral technology of VM and is also difficult due to the complexity of mechanism and diversity of parameters. Previously much research has been mainly carried out on the geometrical simulation or physical simulation respectively. The aim of this paper is to study the processing simulation in laser surface treatment based on the mechanism, put forward the architecture of the whole processing simulation and give the models of the processing. As a result the data structure layers in the whole simulation is presented.

The association of the Arabidopsis actin-related protein (ARP) 2/3 complex with cell membranes is linked to its assembly status but not its activation

国科图

The sequence and de novo assembly of the giant panda genome

Using next-generation sequencing technology alone, we have successfully generated and assembled a draft sequence of the giant panda genome. The assembled contigs (2.25 gigabases (Gb)) cover approximately 94% of the whole genome, and the remaining gaps (0.05 Gb) seem to contain carnivore-specific repeats and tandem repeats. Comparisons with the dog and human showed that the panda genome has a lower divergence rate. The assessment of panda genes potentially underlying some of its unique traits indicated that its bamboo diet might be more dependent on its gut microbiome than its own genetic composition. We also identified more than 2.7 million heterozygous single nucleotide polymorphisms in the diploid genome. Our data and analyses provide a foundation for promoting mammalian genetic research, and demonstrate the feasibility for using next-generation sequencing technologies for accurate, cost-effective and rapid de novo assembly of large eukaryotic genomes.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition

Si nanoquantum dots have been formed by self-assembled growth on the both Si-O-Si and Si-OH bonds terminated SiO2 surfaces using the low-pressure chemical vapor deposition (LPCVD) and surface thermal decomposition of pure SiH4 gas. We have experimentally studied the variation of Si. dot density with Si-OH bonds density, deposition temperature and SiH4 pressure, and analyzed qualitatively the formation mechanism of the Si nanoquantum dots based on LPCVD surface thermal dynamics principle. The results are very. important for the control of the density and size of Si nanoquantum dots, and have potential applications in the new quantum devices.

Electron transport through hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots

The transmission of electrons through a hierarchical self-assembly of GaAs/AlxGa(1-)xAs quantum dots (QDs) is calculated using the coupled-channel recursion method. Our results reveal that the number of conductance peaks does not change when the barrier widths change, but the intensities decrease as the barrier widths increase. The conductance peaks will shift towards low Fermi energies as the transverse width of GaAs QD increases, as the thickness of GaAs quantum well increases, or as the height of GaAs QDs decreases. Our calculated results may be useful in the application of QDs to photoelectric devices. (c) 2005 American Institute of Physics.

Asymmetric quantum-confined Stark effects of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots

Quantum-confined Stark effects in GaAs/AlxGa1-xAs self-assembled quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that the electron and hole energy levels and the optical transition energies can cause blueshifts when the electric field is applied along the opposite to the growth direction. Our calculated results are useful for the application of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots to photoelectric devices. (c) 2005 American Institute of Physics.