8 resultados para static random access memory

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:33:41Z No. of bitstreams: 1 ApplPhysLett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (MD5)

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This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data.

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The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

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The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

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A series of biodegradable polyurethanes (PUs) are synthesized from the copolymer diols prepared from L-lactide and epsilon-caprolactone (CL), 2,4-toluene diisocyanate, and 1,4-butanediol. Their thermal and mechanical properties are characterized via FTIR, DSC, and tensile tests. Their T(g)s are in the range of 28-53 degrees C. They have high modulus, tensile strength, and elongation ratio at break. With increasing CL content, the PU changes from semicrystalline to completely amorphous. Thermal mechanical analysis is used to determine their shape-memory property. When they are deformed and fixed at proper temperatures, their shape-recovery is almost complete for a tensile elongation of 150% or a compression of 2-folds. By changing the content of CL and the hard-to-soft ratio, their T(g)s and their shape-recovery temperature can be adjusted. Therefore, they may find wide applications.

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Both absolute molecular weight and molecular sizes (radius of gyration and hydrodynamic radius) of a vinyl-type polynorbornene eluting from size-exclusion chromatography columns were determined by combined with a static and dynamic laser light scattering detector. The hydrodynamic radius of polymer fraction eluting from size-exclusion chromatography columns was obtained from dynamic laser light scattering measurements at only a single angle of 900 by introducing a correction factor. According to the scaling relationship between molecular sizes and molecular weight and the ratio between radius of gyration and hydrodynamic radius, the vinyl-type polynorbornene took a random coil conformation in 1,2,4-trichlorobenzene at 150 degreesC.