SEU ground and flight data in static random access memories
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3880
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| Resumo |
This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu, J; Duan, JL; Hou, MD; Sun, YM; Yao, HJ; Mo, D; Zhang, QX; Wang, ZG; Jin, YF; Cai, JR; Ye, ZH; Han, JW; Lin, YL; Huang, Z.SEU ground and flight data in static random access memories,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS ,38808,245(1):342-345 |
| Palavras-Chave | #single event effects #heavy ion simulation #microcircuit |
| Tipo |
期刊论文 |
