Experimental Verification And Theoretical Analysis Of The Relationships Between Hardness, Elastic Modulus, And The Work Of Indentation

The relationship between hardness (H), reduced modulus (E-r), unloading work (W-u), and total work (W-t) of indentation is examined in detail experimentally and theoretically. Experimental study verifies the approximate linear relationship. Theoretical analysis confirms it. Furthermore, the solutions to the conical indentation in elastic-perfectly plastic solid, including elastic work (W-e), H, W-t, and W-u are obtained using Johnson's expanding cavity model and Lame solution. Consequently, it is found that the W-e should be distinguished from W-u, rather than their equivalence as suggested in ISO14577, and (H/E-r)/(W-u/W-t) depends mainly on the conical angle, which are also verified with numerical simulations. (C) 2008 American Institute of Physics.

Numerical verification for instrumented spherical indentation techniques in determining the plastic properties of materials

 Instrumented indentation tests have been widely adopted for elastic modulus determination. Recently, a number of indentation-based methods for plastic properties characterization have been proposed, and rigorous verification is absolutely necessary for their wide application. In view of the advantages of spherical indentation compared with conical indentation in determining plastic proper-ties, this study mainly concerns verification of spherical indentation methods. Five convenient and simple models were selected for this purpose, and numerical experiments for a wide range of materials are carried out to identify their accuracy and sensitivity characteristics. The verification results show that four of these five methods can give relatively accurate and stable results within a certain material domain, which is defined as their validity range and has been summarized for each method.

A discussion about a class of stress intensity factors and its verification

In this paper, new formulae of a class of stress intensity factors for an infinite plane with two collinear semi-infinite cracks are presented. The formulae differ from those gathered in several handbooks used all over the world. Some experiments and finite element calculations have been developed to verify the new formulae and the results have shown its reliability. Finally, the new formulae and the old are listed to show the differences between them.

Verification of a scaling law in few-cycle laser pulses

The scaling law of photoionization in few-cycle laser pulses is verified in this paper. By means of numerical solution of time-dependent Schrodinger equation, the photoionization and the asymmetry degree of photoionization of atoms with different binding potential irradiated by various laser pulses are studied. We find that the effect of increasing pulse intensity is compensated by deepening the atomic binding potential. In order to keep the asymmetric photoionization unchanged, if the central frequency of the pulse is enlarged by k times, the atomic binding potential should also be enlarged by k times, and the laser intensity should be enlarged by k(3) times. (c) 2005 Optical Society of America.

Analytical model of spin filtering effect and its experimental verification in a forward-biased iron-metal-Al2O3-n-type GaAs tunneling structure under optical spin orientation

An analytical model for the spin filtering transport in a ferromagnetic-metal - Al2O3 - n-type semiconductor tunneling structure has been developed, and demonstrated that the ratio of the helicity-modulated photo-response to the chopped one is proportional to the sum of the relative asymmetry in conductance of two opposite spin-polarized tunneling channels and the MCD effect of the ferromagnetic metal film. The performed measurement in an iron-metal/Al2O3/n-type GaAs tunneling structure under the optical spin orientation has verified that all the aspects of the experimental results are very well in accordance with our model in the regime of the spin filtering. After the MCD effect of the iron film is calibrated by an independent measurement, the physical quantity of Delta G(t)/G(t) (Delta G(t) = G(t)(up arrow) - G(t)(down arrow) is the difference of the conductance between two opposite spin tunneling channels, G(t) =( G(t)(up arrow) + G(t)(down arrow))/2 the averaged tunneling conductance), which concerns us most, can be determined quantitatively with a high sensitivity in the framework of our analytical model. Copyright (c) EPLA, 2008.

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field. The observed plateau-like structures appear in negative differential resistance region on the I-V curves and are magnetic-field dependent. The plateau-like structures are due to the coupling between the energy levels in the emitter well and in the main quantum well. (C) 2004 American Institute of Physics.

Application of ICA in on-line verification of the phase difference of the current sensor

The performance of the current sensor in power equipment may become worse affected by the environment. In this paper, based on ICA, we propose a method for on-line verification of the phase difference of the current sensor. However, not all source components are mutually independent in our application. In order to get an exact result, we have proposed a relative likelihood index to choose an optimal result from different runs. The index is based on the maximum likelihood evaluation theory and the independent subspace analysis. The feasibility of our method has been confirmed by experimental results.

The design and verification of FPGA CAD toolset

This paper introduces a complete CAD toolset for the implementation of digital logic in a Field-Programmable Gate Array (FPGA) platform. Compared with existing academic toolsets, this toolset introduces formal verification in each step of the tool flow, especially the formal verification of the configuration bitstream. The FPGA CAD tool verification flow using Formality is presented in detail. Using plug-in technology, we have developed an integrated FPGA design kit to incorporate all tools together.

Design and Verification of the Programming Circuit in an Application-Specific FPGA

In this paper we present a methodology and its implementation for the design and verification of programming circuit used in a family of application-specific FPGAs that share a common architecture. Each member of the family is different either in the types of functional blocks contained or in the number of blocks of each type. The parametrized design methodology is presented here to achieve this goal. Even though our focus is on the programming circuitry that provides the interface between the FPGA core circuit and the external programming hardware, the parametrized design method can be generalized to the design of entire chip for all members in the FPGA family. The method presented here covers the generation of the design RTL files and the support files for synthesis, place-and-route layout and simulations. The proposed method is proven to work smoothly within the complete chip design methodology. We will describe the implementation of this method to the design of the programming circuit in details including the design flow from the behavioral-level design to the final layout as well as the verification. Different package options and different programming modes are included in the description of the design. The circuit design implementation is based on SMIC 0.13-micron CMOS technology.

Application of ICA in on-line verification of the phase difference of the current sensor

The performance of the current sensor in power equipment may become worse affected by the environment. In this paper, based on ICA, we propose a method for on-line verification of the phase difference of the current sensor. However, not all source components are mutually independent in our application. In order to get an exact result, we have proposed a relative likelihood index to choose an optimal result from different runs. The index is based on the maximum likelihood evaluation theory and the independent subspace analysis. The feasibility of our method has been confirmed by experimental results.

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.