71 resultados para correctness verification
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
现阶段对操作系统的强制访问控制框架的正确性验证的研究主要集中于对授权钩子放置的验证.文中基于TrustedBSD MAC框架对强制访问控制框架的正确性验证问题进行了研究,在授权钩子放置验证的基础上,提出了安全标记的完全初始化验证和完全销毁验证.为了实现上述验证,文中提出了一个路径敏感的、基于用户自定义检查规则的静态分析方法.该方法通过对集成于编译器的静态分析工具mygcc进行扩展来验证强制访问控制框架的钩子放置的准确性和完备性.该方法具有完全的路径覆盖性,且具有低的误报率和时间开销.
Resumo:
The relationship between hardness (H), reduced modulus (E-r), unloading work (W-u), and total work (W-t) of indentation is examined in detail experimentally and theoretically. Experimental study verifies the approximate linear relationship. Theoretical analysis confirms it. Furthermore, the solutions to the conical indentation in elastic-perfectly plastic solid, including elastic work (W-e), H, W-t, and W-u are obtained using Johnson's expanding cavity model and Lame solution. Consequently, it is found that the W-e should be distinguished from W-u, rather than their equivalence as suggested in ISO14577, and (H/E-r)/(W-u/W-t) depends mainly on the conical angle, which are also verified with numerical simulations. (C) 2008 American Institute of Physics.
Resumo:
Instrumented indentation tests have been widely adopted for elastic modulus determination. Recently, a number of indentation-based methods for plastic properties characterization have been proposed, and rigorous verification is absolutely necessary for their wide application. In view of the advantages of spherical indentation compared with conical indentation in determining plastic proper-ties, this study mainly concerns verification of spherical indentation methods. Five convenient and simple models were selected for this purpose, and numerical experiments for a wide range of materials are carried out to identify their accuracy and sensitivity characteristics. The verification results show that four of these five methods can give relatively accurate and stable results within a certain material domain, which is defined as their validity range and has been summarized for each method.
Resumo:
In this paper, new formulae of a class of stress intensity factors for an infinite plane with two collinear semi-infinite cracks are presented. The formulae differ from those gathered in several handbooks used all over the world. Some experiments and finite element calculations have been developed to verify the new formulae and the results have shown its reliability. Finally, the new formulae and the old are listed to show the differences between them.
Resumo:
The scaling law of photoionization in few-cycle laser pulses is verified in this paper. By means of numerical solution of time-dependent Schrodinger equation, the photoionization and the asymmetry degree of photoionization of atoms with different binding potential irradiated by various laser pulses are studied. We find that the effect of increasing pulse intensity is compensated by deepening the atomic binding potential. In order to keep the asymmetric photoionization unchanged, if the central frequency of the pulse is enlarged by k times, the atomic binding potential should also be enlarged by k times, and the laser intensity should be enlarged by k(3) times. (c) 2005 Optical Society of America.
Resumo:
An analytical model for the spin filtering transport in a ferromagnetic-metal - Al2O3 - n-type semiconductor tunneling structure has been developed, and demonstrated that the ratio of the helicity-modulated photo-response to the chopped one is proportional to the sum of the relative asymmetry in conductance of two opposite spin-polarized tunneling channels and the MCD effect of the ferromagnetic metal film. The performed measurement in an iron-metal/Al2O3/n-type GaAs tunneling structure under the optical spin orientation has verified that all the aspects of the experimental results are very well in accordance with our model in the regime of the spin filtering. After the MCD effect of the iron film is calibrated by an independent measurement, the physical quantity of Delta G(t)/G(t) (Delta G(t) = G(t)(up arrow) - G(t)(down arrow) is the difference of the conductance between two opposite spin tunneling channels, G(t) =( G(t)(up arrow) + G(t)(down arrow))/2 the averaged tunneling conductance), which concerns us most, can be determined quantitatively with a high sensitivity in the framework of our analytical model. Copyright (c) EPLA, 2008.
Resumo:
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field. The observed plateau-like structures appear in negative differential resistance region on the I-V curves and are magnetic-field dependent. The plateau-like structures are due to the coupling between the energy levels in the emitter well and in the main quantum well. (C) 2004 American Institute of Physics.
Resumo:
The performance of the current sensor in power equipment may become worse affected by the environment. In this paper, based on ICA, we propose a method for on-line verification of the phase difference of the current sensor. However, not all source components are mutually independent in our application. In order to get an exact result, we have proposed a relative likelihood index to choose an optimal result from different runs. The index is based on the maximum likelihood evaluation theory and the independent subspace analysis. The feasibility of our method has been confirmed by experimental results.
Resumo:
This paper introduces a complete CAD toolset for the implementation of digital logic in a Field-Programmable Gate Array (FPGA) platform. Compared with existing academic toolsets, this toolset introduces formal verification in each step of the tool flow, especially the formal verification of the configuration bitstream. The FPGA CAD tool verification flow using Formality is presented in detail. Using plug-in technology, we have developed an integrated FPGA design kit to incorporate all tools together.
Resumo:
In this paper we present a methodology and its implementation for the design and verification of programming circuit used in a family of application-specific FPGAs that share a common architecture. Each member of the family is different either in the types of functional blocks contained or in the number of blocks of each type. The parametrized design methodology is presented here to achieve this goal. Even though our focus is on the programming circuitry that provides the interface between the FPGA core circuit and the external programming hardware, the parametrized design method can be generalized to the design of entire chip for all members in the FPGA family. The method presented here covers the generation of the design RTL files and the support files for synthesis, place-and-route layout and simulations. The proposed method is proven to work smoothly within the complete chip design methodology. We will describe the implementation of this method to the design of the programming circuit in details including the design flow from the behavioral-level design to the final layout as well as the verification. Different package options and different programming modes are included in the description of the design. The circuit design implementation is based on SMIC 0.13-micron CMOS technology.
Resumo:
The performance of the current sensor in power equipment may become worse affected by the environment. In this paper, based on ICA, we propose a method for on-line verification of the phase difference of the current sensor. However, not all source components are mutually independent in our application. In order to get an exact result, we have proposed a relative likelihood index to choose an optimal result from different runs. The index is based on the maximum likelihood evaluation theory and the independent subspace analysis. The feasibility of our method has been confirmed by experimental results.
Resumo:
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.