Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

Nation Natural Science Foundation of China 50672079 60676027 60837001 60776007; National Basic Research Program of China (973 Program) 2007CB613404; China-MOST International Sci & Tech Cooperation and Exchange 2008DFA51230

The fabrication of thick SiO2 layer by anodization

Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

The fabrication of thick SiO2 layer by anodization

Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

Silicon nanopore array structure using porous anodic alumina

A free-standing, bidirectionally permeable and ultra-thin (500-1000 nm) porous anodic alumina membrane was fabricated using a two-step aluminium anodization process, which was then placed on top of a silicon film as an etching mask. The pattern was transferred to silicon using dry-etching technology, and the silicon nanopore array structure was formed. The factors which afflct the pattern transfer process are discussed. Observation of the nanopatterned sample under a scanning electron microscope shows that the structure obtained by this method is made up of uniform and highly ordered holes, which attains to 125 nm depth. The photoluminescence spectrum from the nanopatterned sample,the surface of which has been thermal-oxidized, shows that the the luminesce is evidently enhanced, the mechanism of which is based on the normally weak TO phonon assisted bandgap light-emission process, and the physical reasons that underlic the enhancement have been analyzed. The PL results do show an attractive optical characteristic, which provides a promising pathway to achieve efficient light emission from silicon.

Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.

Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

Optical and structural properties of anodized AlxGa1-xAs layers

The optical and structural properties of anodized AlxGa1-xAs films were investigated by using optical reflectance, X-ray photoemission and Auger electron spectroscopy (XPS and AES). II was found that the anodization process occurs progressively from the surface to the bulk of AlxGa1-xAs and the formed oxidation film comprises mainly oxides of Al and Ga together with a relatively small amount of As. The refractive indexes of the anodized Al0.8Ga0.2As film and Al0.8Ga0.2As film itself were deduced to be about 1.80 and 3.25, respectively, indicating that the anodization film is desirable for anti-reflection coating of the surface of AlxGa1-xAs/GaAs solar cells. (C) 1997 Elsevier Science S.A.

Field emission from TiO2/Ti nanotube arrays with different morphologies

Well-aligned TiO2/Ti nanotube arrays were electrochemically formed in a HF solution for different anodization times. Field emission scanning electron microscopy (FE-SEM) images reveal that anodization time had a great influence on the morphology of TiO2/Ti nanotube arrays. The composition of resulting nanotubes was analyzed by X-ray photoelectron spectroscopy (XPS). Field emission properties of the prepared samples with different morphologies were investigated by the Fowler-Nordheim (F-N) theory. The results indicate that the morphology can affect field emission behaviors. TiO2/Ti nanotube arrays with clear, uniform, and short nanotubes display moderate field emission properties, and have the better turn-on field of 4.6 V/mu m and good field emission stability. (C) 2010 Elsevier B.V. All rights reserved.

Solid-state dye-sensitized solar cells using TiO2 nanotube arrays on FTO glass

Highly ordered, vertically oriented TiO2 nanotube arrays were prepared by potentiostatic anodization of titanium on FTO-coated glass substrate and for the first time successfully applied in the fabrication of solid-state dye sensitized solar cells (SSDSCs), giving a power conversion efficiency of 1.67% measured under an irradiation of air mass 1.5 global (AM 1.5 G) full sunlight. Furthermore, 3.8% efficiency was reached with a 2.8 mu m thin TiO2 nanotube array film based on a metal free organic dye using ionic liquid electrolyte.

Kinetics of atomic force microscope-based scanned probe oxidation on an octadecylated silicon(111) surface

Atomic force microscope (AFM)-based scanned probe oxidation (SPO) nanolithography has been carried out on an octadecyl-terminated Si(111) surface to create dot-array patterns under ambient conditions in contact mode. The kinetics investigations indicate that this SPO process involves three stages. Within the steadily growing stage, the height of oxide dots increases logarithmically with pulse duration and linearly with pulse voltage. The lateral size of oxide dots tends to vary in a similar way. Our experiments show that a direct-log kinetic model is more applicable than a power-of-time law model for the SPO process on an alkylated silicon in demonstrating the dependence of oxide thickness on voltage exposure time within a relatively wide range. In contrast with the SPO on the octodecysilated SiO2/silicon surface, this process can be realized by a lower voltage with a shorter exposure time, which will be of great benefit to the fabrication of integrated nanometer-sized electronic devices on silicon-based substrates. This study demonstrates that the alkylated silicon is a new promising substrate material for silicon-based nanolithography.

Scanned probe oxidation on an octadecyl-terminated silicon (111) surface with an atomic force microscope: kinetic investigations in line patterning

Scanned probe oxidation (SPO) nanolithography has been performed with an atomic force microscope (AFM) on an octadecyl-terminated silicon (111) surface to create protuberant oxide line patterns under ambient conditions in contact mode. The kinetic investigations of this SPO process indicate that the oxide line height increases linearly with applied voltage and decreases logarithmically with writing, speed. The oxide line width also tends to vary with the same law. The ambient humidity and the AFM tip state can remarkably influence this process, too. As compared with traditional octadecylsilated SiO2/Si substrate, such a substrate can guarantee the SPO with an obviously lowered voltage and a greatly increased writing speed. This study demonstrates that such alkylated silicon is a promising silicon-based substrate material for SPO nanolithography.

Molecular characterization of beef liver catalase by scanning tunneling microscopy

Beef liver catalase molecules can stick tenaciously to the highly oriented pyrolytic graphite (HOPG) surface which has been activated by electrochemical anodization. The immobilized sample is stable enough for high resolution scanning tunneling microscope (STM) imaging. When the anodized conditions are controlled properly, the HOPG surface will be covered with a very thin oxide layer which can bind the protein molecules. Individual molecules of native beef liver catalase are directly observed in detail by STM, which shows an oval-shape structure with a waist. The dimensions of one catalase molecule in this study are estimated as 9.0 x 6.0x 2.0 nm(3), which are in good agreement with the known data obtained from X-ray analysis, except the height can not be exactly determined from STM. Electrochemical results confirm that the freshly adsorbed catalase molecules maintain their native structures with biological activities. However, the partly unfolding structure of catalase molecules is observed after the sample is stored for 15 days, this may be caused by the long-term interaction between catalase molecules and the anodized HOPG surface.

A COMPARATIVE-STUDY ON STM IMAGING AND ELECTROCATALYTIC ACTIVITY OF DIFFERENT SURFACES MODIFIED WITH FLAVIN ADENINE-DINUCLEOTIDE

Flavin adenine dinucleotide (FAD) was modified onto the highly oriented pyrolytic graphite (hopg) and glassy carbon electrode (gee) surfaces with three methods, respectively. Corresponding image analysis for FAD-modified hopg surfaces has been performed by scanning tunnelling microscope (STM) for the first time. The molecular resolution STM image of FAD adsorbed on the freshly-cleaved hopg was obtained, the quantitative size determination suggests that the FAD molecules adsorb side lying on the substrate surface. The anodization treatment of hopg surface yields many pits, which were clearly observed under STM. These pits provide active sites on the hopg surface for modification and the treated hopg can strongly adsorb FAD molecules, the latter exhibiting an irregular cluster structure on such a surface. When FAD was electrochemically deposited on the substrate surface, a chain structure was successfully observed. The adsorbed FAD on anodized glassy carbon electrode (gee) surface can effectively catalyze the reduction of glucose oxidase, hemoglobin and myoglobin, with a large decrease in the overvoltage, whereas the deposited FAD film exhibits excellent electrocatalysis towards dioxygen reduction.